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1. 发明申请

US20150144869A1 GROUP-III NITRIDE STRUCTURE 有权
标题翻译：第三组氮化物结构
公开(公告)号：US20150144869A1
公开(公告)日：2015-05-28
申请号：US14410004
申请日：2013-06-26
申请人： Polar Light Technologies AB
发明人： Anders Lundskog , Chih-Wei Hsu , Fredrik Karlsson
IPC分类号： H01L33/24 , H01L33/18 , H01L33/32 , H01L33/00 , H01L33/06
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/20 , H01L33/32
摘要： Group-III nitride structure comprising at least one structure pyramid having a base having at least four sides. The structure pyramid comprises an inner pyramid having a base having at least four sides, which inner pyramid is made of a first group-III nitride. The inner pyramid is coated with an inner first layer made of a second group-III nitride and an outer second layer made of a third group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride. The base of the structure pyramid is elongated resulting in an upper ridge creating at least one anisotropic quantum dot.Method for producing a group-III nitride structure comprising providing a substrate; providing a masking film on the substrate, which film comprises at least one elongated aperture; growth of a first group-III nitride on the substrate; deposition of an inner first layer of a second group-III nitride on the first group-III nitride; deposition of an outer second layer of a third group-III nitride on the second group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride.
摘要翻译： III族氮化物结构，其包含至少一个具有至少四个边的基底的结构金字塔。结构金字塔包括具有至少四个边的基底的内棱锥，该内锥由第一III族氮化物制成。内金字塔涂覆有由第二组III族氮化物制成的内部第一层和由第三族III族氮化物制成的外部第二层，其中第二族III族氮化物具有比第一组III更低的带隙氮化物和比第三族III族氮化物低的带隙。结构金字塔的底部是细长的，导致产生至少一个各向异性量子点的上脊。一种III族氮化物结构体的制造方法，其特征在于，在衬底上提供掩模膜，该膜包括至少一个细长孔; 衬底上第一组III族氮化物的生长; 在第一组III族氮化物上沉积第二组III族氮化物的内部第一层; 在第二III族氮化物上沉积第三组III族氮化物的外部第二层，其中第二族III族氮化物具有比第一III族氮化物更低的带隙和比第三族III族氮化物低的带隙， III族氮化物。

2. 发明授权

US09337389B2 Group-III nitride structure 有权
标题翻译： III族氮化物结构
公开(公告)号：US09337389B2
公开(公告)日：2016-05-10
申请号：US14410004
申请日：2013-06-26
申请人： Polar Light Technologies AB
发明人： Anders Lundskog , Chih-Wei Hsu , Fredrik Karlsson
IPC分类号： H01L33/24 , H01L33/00 , H01L33/06 , H01L33/18 , H01L33/32 , H01L33/16 , H01L33/20
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/20 , H01L33/32
摘要： Group-III nitride structure comprising at least one structure pyramid having a base having at least four sides. The structure pyramid comprises an inner pyramid having a base having at least four sides, which inner pyramid is made of a first group-III nitride. The inner pyramid is coated with an inner first layer made of a second group-III nitride and an outer second layer made of a third group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride. The base of the structure pyramid is elongated resulting in an upper ridge creating at least one anisotropic quantum dot.Method for producing a group-III nitride structure comprising providing a substrate; providing a masking film on the substrate, which film comprises at least one elongated aperture; growth of a first group-III nitride on the substrate; deposition of an inner first layer of a second group-III nitride on the first group-III nitride; deposition of an outer second layer of a third group-III nitride on the second group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride.
摘要翻译： III族氮化物结构，其包含至少一个具有至少四个边的基底的结构金字塔。结构金字塔包括具有至少四个边的基底的内棱锥，该内锥由第一III族氮化物制成。内金字塔涂覆有由第二组III族氮化物制成的内部第一层和由第三族III族氮化物制成的外部第二层，其中第二族III族氮化物具有比第一组III更低的带隙氮化物和比第三族III族氮化物低的带隙。结构金字塔的底部是细长的，导致产生至少一个各向异性量子点的上脊。一种III族氮化物结构体的制造方法，其特征在于，在衬底上提供掩模膜，该膜包括至少一个细长孔; 衬底上第一组III族氮化物的生长; 在第一组III族氮化物上沉积第二组III族氮化物的内部第一层; 在第二III族氮化物上沉积第三组III族氮化物的外部第二层，其中第二族III族氮化物具有比第一III族氮化物更低的带隙和比第三族III族氮化物低的带隙， III族氮化物。

3. 发明专利

SE537434C2 Grupp III-nitridstruktur 未知
公开(公告)号：SE537434C2
公开(公告)日：2015-04-28
申请号：SE1200384
申请日：2012-06-26
申请人： POLAR LIGHT TECHNOLOGIES AB
发明人： KARLSSON FREDRIK , HSU CHIH-WEI , LUNDSKOG ANDERS
IPC分类号： H01L33/06 , B82Y20/00 , H01L33/08 , H01L33/20 , H01L33/44

4. 发明公开

EP2865020A1 GROUP-III NITRIDE STRUCTURE 有权
标题翻译： III族氮化物结构
公开(公告)号：EP2865020A1
公开(公告)日：2015-04-29
申请号：EP13731774.9
申请日：2013-06-26
申请人： Polar Light Technologies AB
发明人： KARLSSON, Fredrik , HSU, Chih-Wei , LUNDSKOG, Anders
IPC分类号： H01L33/00 , H01L33/06 , H01L33/24
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/20 , H01L33/32
摘要： Group-III nitride structure comprising at least one structure pyramid having a base having at least four sides. The structure pyramid comprises an inner pyramid having a base having at least four sides, which inner pyramid is made of a first group-III nitride. The inner pyramid is coated with an inner first layer made of a second group-III nitride and an outer second layer made of a third group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride. The base of the structure pyramid is elongated resulting in an upper ridge creating at least one anisotropic quantum dot. Method for producing a group-III nitride structure comprising providing a substrate;providing a masking film on the substrate, which film comprises at least one elongated aperture; growth of a first group-III nitride on the substrate;deposition of an inner first layer of a second group-III nitride on the first group-III nitride;deposition of an outer second layer of a third group-III nitride on the second group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride.

5. 发明公开

EP4447119A1 MANUFACTURING METHOD OF A LED ARRAY PRECURSOR WITH ELECTRICAL CONTACTS ON A SAME SIDE, CORRESPONDING PRECURSOR, LED ARRAY AND DEVICES COMPRISING THE SAME 审中-公开
公开(公告)号：EP4447119A1
公开(公告)日：2024-10-16
申请号：EP23167846.7
申请日：2023-04-13
申请人： Polar Light Technologies AB
发明人： Hsu, Chih-Wei , Le, Son Phuong , Martinovic, Ivan , Svensson, Christer , Holtz, Per Olof
IPC分类号： H01L27/15 , H01L33/00 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/62 , H01L33/06 , H01L33/24 , H01L33/56 , H01L25/16
CPC分类号： H01L33/385 , H01L33/0093 , H01L33/20 , H01L33/24 , H01L33/62 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2933/001620130101 , H01L33/44 , H01L33/56 , H01L27/156 , H01L27/153 , H01L33/06 , H01L25/167
摘要： The present disclosure provides a manufacturing method of forming a light-emitting diode (LED) array precursor (10), and LED arrays precursors, LED arrays and devices comprising the same. The method comprises: providing a substrate (100); forming one or more first layers (120) on an epi surface side (102) of the substrate, wherein the one or more first layers at least comprise a first semiconductor layer (120b) and wherein further one or more first layers, if any, further comprise buffer layers (120a) stacked between the substrate and the first semiconductor layer; selectively masking said one or more first layers by thereon depositing one or more masking layers (140) wherein unmasked portions of said one or more first layers form a plurality of apertures (142); forming microstructures (160) within at least part of the apertures, wherein the microstructures are in physical contact with the first semiconductor layer; forming both anode and cathode electrical contacts (180a,b) on the epi surface side (102) of the substrate (100).

6. 发明授权

EP2865020B1 GROUP-III NITRIDE STRUCTURE 有权
标题翻译： III族氮化物结构
公开(公告)号：EP2865020B1
公开(公告)日：2016-08-24
申请号：EP13731774.9
申请日：2013-06-26
申请人： Polar Light Technologies AB
发明人： KARLSSON, Fredrik , HSU, Chih-Wei , LUNDSKOG, Anders
IPC分类号： H01L33/00 , H01L33/06 , H01L33/24
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/20 , H01L33/32

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