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1. 发明授权

US5250821A Electronic power device having plural elementary semiconductor components connected in parallel 失效
标题翻译：具有并联连接的多个基本半导体元件的电子功率器件
公开(公告)号：US5250821A
公开(公告)日：1993-10-05
申请号：US819362
申请日：1992-01-09
申请人： Giuseppe Ferla , Cesare Ronsisvalle , Pier E. Zani
发明人： Giuseppe Ferla , Cesare Ronsisvalle , Pier E. Zani
IPC分类号： H01L25/07 , H01L23/051 , H01L23/50 , H01L23/525 , H01L25/18 , H01L25/04 , H01L23/00
CPC分类号： H01L23/051 , H01L23/50 , H01L23/5256 , H01L2924/0002 , H01L2924/13055
摘要： Plural modular elementary semiconductor power components are respectively contained within plural semiconductor chip regions of a same semiconductor slice. A metallic layer covers a first surface of the semiconductor slice and is commonly connected to anode electrodes of the plural elementary power components. Plural space apart quadrangular metallic layer regions respectively cover the plural semiconductor chip regions on a second surface of the semiconductor slice and are respectively connected to cathode electrodes of the plural elementary power components. Plural first metallic tracks are spaced apart from and surround the respective plural metallic layer regions on the second surface of the semiconductor slice. Each respective first metallic track is connected to a control electrode of the elementary power component contained within the semiconductor chip regions surrounded by the respective first metallic track. Plural second metallic tracks extend spaced apart from and between the plural first metallic tracks to form a lattice configuration on the second surface of the semiconductor slice. Plural fuse elements, for selectively isolating defective elementary power components, are located on the second surface of the semiconductor slice and connect the first and second metallic tracks.

2. 发明授权

US5397745A Method of making electronic power device realized by a series of elementary semiconductor components connected in parallel 失效
标题翻译：通过并联连接的一系列基本半导体元件实现的制造电子设备的方法
公开(公告)号：US5397745A
公开(公告)日：1995-03-14
申请号：US77375
申请日：1993-06-17
申请人： Giuseppe Ferla , Cesare Ronsisvalle , Pier E. Zani
发明人： Giuseppe Ferla , Cesare Ronsisvalle , Pier E. Zani
IPC分类号： H01L25/07 , H01L23/051 , H01L23/50 , H01L23/525 , H01L25/18 , H01L21/60
CPC分类号： H01L23/051 , H01L23/50 , H01L23/5256 , H01L2924/0002 , H01L2924/13055
摘要： Plural modular elementary semiconductor power components are respectively contained within plural semiconductor chip regions of a same semiconductor slice. A metallic layer covers a first surface of the semiconductor slice and is commonly connected to anode electrodes of the plural elementary power components. Plural space apart quadrangular metallic layer regions respectively cover the plural semiconductor chip regions on a second surface of the semiconductor slice and are respectively connected to cathode electrodes of the plural elementary power components. Plural first metallic tracks are spaced apart from and surround the respective plural metallic layer regions on the second surface of the semiconductor slice. Each respective first metallic track is connected to a control electrode of the elementary power component contained within the semiconductor chip regions surrounded by the respective first metallic track. Plural second metallic tracks extend spaced apart from and between the plural first metallic tracks to form a lattice configuration on the second surface of the semiconductor slice. Plural fuse elements, for selectively isolating defective elementary power components, are located on the second surface of the semiconductor slice and connect the first and second metallic tracks.
摘要翻译：多个模块化基本半导体功率元件分别包含在相同半导体片的多个半导体芯片区域内。金属层覆盖半导体片的第一表面，并且通常连接到多个基本功率元件的阳极电极。多个隔开的四边形金属层区域分别覆盖半导体片的第二表面上的多个半导体芯片区域，并且分别连接到多个基本功率部件的阴极电极。多个第一金属轨道与半导体片的第二表面上的相应的多个金属层区域间隔开并围绕。每个相应的第一金属轨道连接到包含在由相应的第一金属轨道包围的半导体芯片区域内的基本功率分量的控制电极。多个第二金属轨道与多个第一金属轨道间隔开并且在多个第一金属轨道之间延伸，以在半导体片的第二表面上形成晶格构型。用于选择性地隔离有缺陷的基本功率元件的多个熔丝元件位于半导体片的第二表面上，并连接第一和第二金属轨道。

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