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    • 9. 发明授权
    • Multilayer attenuating phase-shift masks
    • 多层衰减相移掩模
    • US06274280B1
    • 2001-08-14
    • US09459777
    • 1999-12-13
    • Peter Francis Carcia
    • Peter Francis Carcia
    • G03F900
    • G03F1/32
    • Disclosed are attenuating embedded phase shift masks capable of producing a phase shift of 180° with an optical transitivity of at least 0.001 at a selected lithographic wavelength less than 200 nm. The masks are comprised of distinct contiguous alternating contiguous layers of an optically transparent material consisting essentially of an oxide selected from the group consisting of oxides of Al and Si and layers. of an optically absorbing material consisting essentially of a nitride selected from the group consisting of nitrides of Al and Si. Such masks are commonly known in the art as attenuating (embedded) phase shift masks or half-tone phase shift masks.
    • 公开了衰减嵌入式相移掩模,其能够在小于200nm的选定光刻波长下产生180°的相移,其光学传导率至少为0.001。 掩模由基本上由选自Al和Si的氧化物和层的氧化物组成的光学透明材料的不同邻接的交替连续层组成。 的光学吸收材料,其基本上由选自Al和Si的氮化物的氮化物组成。 这种掩模在本领域中通常被称为衰减(嵌入)相移掩模或半色调相移掩模