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1. 发明授权

US06867477B2 High gain bipolar transistor 有权
标题翻译：高增益双极晶体管
公开(公告)号：US06867477B2
公开(公告)日：2005-03-15
申请号：US10290975
申请日：2002-11-07
申请人： Jie Zheng , Peihua Ye , Marco Racanelli
发明人： Jie Zheng , Peihua Ye , Marco Racanelli
IPC分类号： H01L29/08 , H01L29/735 , H01L29/00 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/0808 , H01L29/735
摘要： According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for example, N type single crystal silicon. The bipolar transistor further comprises an emitter having a top surface, where the emitter is situated on the top surface of the base. The emitter may comprise P+ type single crystal silicon-germanium, for example. The bipolar transistor further comprises an electron barrier layer situated directly on the top surface of the emitter. The electron barrier layer will cause an increase in the gain, or beta, of the bipolar transistor. The electron barrier layer may be a dielectric such as, for example, silicon oxide. In another embodiment, a floating N+ region, instead of the electron barrier layer, is utilized to increase the gain of the bipolar transistor.
摘要翻译：根据一个示例性实施例，双极晶体管包括具有顶表面的基座。双极晶体管可以是横向PNP双极晶体管，并且基极可以包括例如N型单晶硅。双极晶体管还包括具有顶表面的发射器，其中发射器位于基极的顶表面上。例如，发射极可以包括P +型单晶硅 - 锗。双极晶体管还包括直接位于发射极的顶表面上的电子势垒层。电子势垒层将引起双极晶体管的增益或β的增加。电子势垒层可以是电介质，例如氧化硅。在另一个实施例中，利用浮置N +区而不是电子势垒层来增加双极晶体管的增益。

2. 发明授权

US07512393B2 Downconverting mixer 有权
标题翻译：下变频混频器
公开(公告)号：US07512393B2
公开(公告)日：2009-03-31
申请号：US11250995
申请日：2005-10-14
申请人： Raja Pullela , Peihua Ye , Tirdad Sowlati
发明人： Raja Pullela , Peihua Ye , Tirdad Sowlati
IPC分类号： H04B1/26 , G06F3/033
CPC分类号： H03D7/18 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D7/165 , H03D2200/0047
摘要： A downconverter is provided. The downconverter includes a I mixer and a Q mixer. Each mixer includes a transconductance stage and a mixer core stage. The outputs of the transconductance stages of the mixers are shorted together, and a resistors are arranged in series with an input of the mixer core stages.
摘要翻译：提供下变频器。下变频器包括I混频器和Q混频器。每个混合器包括跨导级和混频器核级。混频器的跨导级的输出短路在一起，并且电阻器与混频器核心级的输入串联布置。

3. 发明申请

US20070087720A1 Downconverting mixer 有权
标题翻译：下变频混频器
公开(公告)号：US20070087720A1
公开(公告)日：2007-04-19
申请号：US11250995
申请日：2005-10-14
申请人： Raja Pullela , Peihua Ye , Tirdad Sowlati
发明人： Raja Pullela , Peihua Ye , Tirdad Sowlati
IPC分类号： H04B1/26
CPC分类号： H03D7/18 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D7/165 , H03D2200/0047
摘要： A downconverter is provided. The downconverter includes a I mixer and a Q mixer. Each mixer includes a transconductance stage and a mixer core stage. The outputs of the transconductance stages of the mixers are shorted together, and a resistors are arranged in series with an input of the mixer core stages.
摘要翻译：提供下变频器。下变频器包括I混频器和Q混频器。每个混合器包括跨导级和混频器核级。混频器的跨导级的输出短路在一起，并且电阻器与混频器核心级的输入串联布置。

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