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1. 发明授权

US5612800A LCLV having photoconductive pedestals each having a cross-sectional area no greater than 5 percent of the area of its respective reflective pad 失效
标题翻译：具有感光基座的LCLV各自具有不大于其相应反射板的面积的5％的横截面积
公开(公告)号：US5612800A
公开(公告)日：1997-03-18
申请号：US333533
申请日：1994-11-02
申请人： Paul O. Braatz , Chiung-Sheng Wu
发明人： Paul O. Braatz , Chiung-Sheng Wu
IPC分类号： G02B26/08 , G02F1/1335 , G02F1/1343 , G02F1/135 , H04N5/74
CPC分类号： G02F1/1354 , G02F1/133526
摘要： A liquid crystal light valve is provided with an array of photoconductive pedestals surrounded by a dielectric matrix material. Metal mirror pads are formed on top of each pedestal to form a high resolution metal matrix mirror, with each pedestal/mirror combination servicing one image pixel. The dielectric matrix forms a potential barrier between the individual photoconductive pedestals which prevents lateral charge migration between pedestals. The metal matrix mirror also shields the underlying photoconductive pedestal from photoactivation by the readout beam. The dielectric matrix material has a lower dielectric constant than the photoconductive pedestals, allowing the impedance of the photoconductive pedestals to match the impedance of the liquid crystal layer with a much thinner layer of photoconductive material than in prior LCLVs using a continuous photoconductive layer. The thinner photoconductive layer results in higher electric fields which improve the LCLV's response time, photodegradation rate, spatial resolution and spectral response.
摘要翻译：液晶光阀设置有由电介质基质材料包围的感光基座的阵列。金属镜垫形成在每个基座的顶部，以形成高分辨率金属矩阵镜，每个基座/镜组合服务于一个图像像素。电介质矩阵在各个感光基座之间形成一个势垒，防止基座之间的横向电荷迁移。金属矩阵镜还屏蔽下面的光导基座，使其不受光读出光束的影响。介质矩阵材料的介电常数低于光导基座，使得光电基座的阻抗与使用连续光电导层的现有LCLV相比，液晶层的阻抗与光电导材料的厚度相比更薄。较薄的光电导层导致更高的电场，这提高了LCLV的响应时间，光降解速率，空间分辨率和光谱响应。

2. 发明授权

US4842376A Double-schottky diode liquid crystal light valve 失效
标题翻译：双肖特基二极管液晶光阀
公开(公告)号：US4842376A
公开(公告)日：1989-06-27
申请号：US758917
申请日：1985-07-25
申请人： Paul O. Braatz , Uzi Efron
发明人： Paul O. Braatz , Uzi Efron
IPC分类号： G02F1/135 , G02F1/136 , G02F1/1365 , H01L31/108 , H01L31/14
CPC分类号： G02F1/1354
摘要： A double Schottky diode light valve (5) includes a liquid crystal (80) for locally modulating a beam (120) by polarization rotation to produce a modulated beam (121), and a photoconductor (40) located adjacent the liquid crystal (80) for receiving and absorbing a second beam (110). The photoconductor (40) controls the polarization responsively to the optical content of the second beam (110). The photoconductor (46) includes a semiconductor substrate and a pair of Schottky diodes (60/40, 30/40) disposed on opposing sides of the substrate. The absorption of the second beam (110) by the substrate (40) produces photogenerated majority carriers. The pair of Schottky diodes (60/40, 30/40) maintain the substrate (40) substantially depleted of such carriers and also reflects the modulated beam back through the liquid crystal.
摘要翻译：双肖特基二极管光阀（5）包括用于通过偏振旋转来局部调制光束（120）以产生调制光束（121）的液晶（80）和位于液晶（80）附近的光电导体（40）用于接收和吸收第二光束（110）。光电导体（40）响应于第二光束（110）的光学内容来控制极化。光电导体（46）包括半导体衬底和设置在衬底的相对侧上的一对肖特基二极管（60/40,30/40）。基板（40）对第二光束（110）的吸收产生光生多数载流子。这对肖特基二极管（60/40,30/40）保持了基本上耗尽这种载流子的衬底（40），并且还将经调制的光束反射回液晶。

3. 发明授权

US4198647A High resolution continuously distributed silicon photodiode substrate 失效
标题翻译：高分辨率连续分布硅光电二极管基板
公开(公告)号：US4198647A
公开(公告)日：1980-04-15
申请号：US4107
申请日：1979-01-17
申请人： Jan Grinberg , Alexander D. Jacobson , William P. Bleha, Jr. , Paul O. Braatz
发明人： Jan Grinberg , Alexander D. Jacobson , William P. Bleha, Jr. , Paul O. Braatz
IPC分类号： G02F1/135 , H01L27/14
CPC分类号： G02F1/1354
摘要： This invention is directed to a semiconductor structure that includes at least one wafer that is fully depleted of all mobile carriers and is used as a medium for the movement of spatially modulated signal represented by charge carriers through the wafer with a spatial resolution that is smaller than the thickness of the wafer. This may be used in the form of a continuous high resolution silicon photodiode substrate to serve as an image input means for an electro-optical display medium, such as a liquid crystal. Next to the photoactivated substrate is a liquid crystal and next to the crystal is a transparent electrode. The photodiode is reverse biased and both of its sides are depleted of all mobile charges throughout its entire thickness. Thus, charges generated in the substrate move to the display not by diffusion as in prior art devices (e.g. the solid state silicon vidicon) but by the influence of the electric field which tends to minimize their lateral spread and thereby achieves a high spatial resolution in spite of the continuous character of this silicon diode device.
摘要翻译：本发明涉及一种半导体结构，该半导体结构包括至少一个完全耗尽所有移动载波的晶片，并且用作用于通过晶片以空间分辨率移动由电荷载体表示的空间调制信号的介质，其空间分辨率小于晶片的厚度。这可以以连续的高分辨率硅光电二极管基板的形式使用，以用作诸如液晶的电光显示介质的图像输入装置。在光活化基板的旁边是液晶，并且在晶体旁边是透明电极。光电二极管是反向偏置的，并且其两侧在整个厚度上都耗尽所有移动电荷。因此，在现有技术的装置（例如，固态硅摄像机）中，在衬底中产生的电荷不会像扩散一样移动到显示器上，而是通过电场的影响，使得它们的横向扩展趋于最小化，从而实现高空间分辨率尽管这种硅二极管器件具有连续的特性。

4. 发明授权

US4191452A AC silicon PN junction photodiode light-valve substrate 失效
标题翻译：交流硅PN结光电二极管光阀基板
公开(公告)号：US4191452A
公开(公告)日：1980-03-04
申请号：US865281
申请日：1977-12-28
申请人： Jan Grinberg , Paul O. Braatz , Michael Waldner , Alexander D. Jacobson
发明人： Jan Grinberg , Paul O. Braatz , Michael Waldner , Alexander D. Jacobson
IPC分类号： G09G3/18 , G02F1/133 , G02F1/135 , G02F1/136 , G02F1/1362 , G02F1/1365 , G09F9/30 , H01L29/768 , H01L31/14 , H04N5/74
CPC分类号： H01L29/76833 , G02F1/135 , G02F1/136277
摘要： There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a PIN photodiode structure. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response an capable of operating over a wide frequency range. A PIN photodiode structure is provided on one side of the substrate next to the MOS capacitor to deplete the substrate of its mobile charge carriers during a portion of the AC cycle and to collect the electric field-guided signal representing charge carriers that are generated or introduced into the substrate by an input mechanism. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
摘要翻译：公开了一种适用于具有PIN光电二极管结构的交流驱动液晶光阀的单晶硅电荷存储装置。电荷存储介质由其上形成有能够在宽频率范围内工作的快速光电瞬变响应的MOS电容器的高电阻率衬底制成。在MOS电容器旁边的基板的一侧设置PIN光电二极管结构，以在AC周期的一部分期间消耗其移动电荷载流子的基板，并且收集表示产生或引入的电荷载流子的电场引导信号通过输入机构进入基板。来自基板的信号通过高反射镜和阻光层电耦合到液晶。

5. 发明授权

US5010251A Radiation detector array using radiation sensitive bridges 失效
标题翻译：辐射检测器阵列使用辐射敏感桥
公开(公告)号：US5010251A
公开(公告)日：1991-04-23
申请号：US463563
申请日：1990-01-11
申请人： Jan Grinberg , Murray S. Welkowsky , Chiung-Sheng Wu , Paul O. Braatz
发明人： Jan Grinberg , Murray S. Welkowsky , Chiung-Sheng Wu , Paul O. Braatz
IPC分类号： G01J5/10 , G01J5/20 , G01J5/22 , G01J5/52
CPC分类号： G01J5/10 , G01J5/20 , G01J5/22 , G01J5/522
摘要： An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.
摘要翻译：公开了一种红外（IR）模拟器，其中像素阵列通过电阻器桥限定在绝缘衬底上，电阻器桥在间隔开的位置处接触衬底，并且在接触位置之间与衬底分离，从而与衬底隔离。衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥，从而从每个像素建立适当的红外辐射。驱动电路以及至少一些电引线优选位于电阻桥下。每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。驱动电路采用产生基本上无闪烁操作的采样和保持电路，其中电阻器桥与它们各自的驱动电路阻抗匹配。可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥，并用热发射材料覆盖电阻层。阵列优选形成在蓝宝石（SOS）硅晶片上。也可以形成电磁辐射桥接检测器阵列，其中桥具有电阻器，热电偶或肖特基结结构。

6. 发明授权

US4973136A Reflective matrix mirror visible to infrared converter light valve 失效
标题翻译：反光矩阵镜可见红外线转换灯
公开(公告)号：US4973136A
公开(公告)日：1990-11-27
申请号：US463904
申请日：1990-01-10
申请人： Paul O. Braatz
发明人： Paul O. Braatz
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1335 , G02F1/135 , G02F1/1365
CPC分类号： G02F1/133553 , G02F1/135 , G02F2001/1352
摘要： A reflective matrix mirror visible to infrared converter light valve (5) includes a liquid crystal medium (60) for spatially modulating an incident infrared beam by polarization rotation, a photosubstrate (30) for receiving an incident visible wavelength image (115) and for controlling the polarization rotation of the liquid crystal medium (60) responsively to the visible image (115), and a reflective matrix mirror (40). The reflective matrix mirror (40) is positioned between the liquid crystal medium (60) and the photosubstrate (30) and reflects the incident infrared beam (125) back through the liquid crystal medium (60) such that the infrared beam (125) passes through the liquid crystal medium twice and is polarization rotated responsively to the visible wavelength image (115). A polarizer (90) positioned exteriorly of the liquid crystal medium (60) converts the polarization rotation of the infrared beam (125) into output intensity modulation to produce an infrared image (130). The reflective matrix mirror (40) comprises an M.times.N array of infrared reflective islands comprising metallic or semiconductor/metallic compounds. The reflective matrix mirror (40) can be formed by depositing reflective material on a layer of silicon dioxide in a grid pattern using a masking technique. Alternatively, the silicon dioxide may be etched to provide an M.times.N array of depressions which are then used as deposition sites for the reflective material. In this later embodiment, the reflective material may be in contact with photosubstrate (30) so as to form Schottky Barrier contacts.
摘要翻译：对红外线转换器光阀（5）可见的反射矩阵镜包括用于通过偏振旋转对入射的红外光束进行空间调制的液晶介质（60），用于接收入射可见波长图像（115）并用于控制响应于可见图像（115）的液晶介质（60）的偏振旋转，以及反射矩阵反射镜（40）。反射矩阵反射镜（40）位于液晶介质（60）和照射基板（30）之间，并将入射的红外光束（125）反射回液晶介质（60），以使红外光束（125）通过通过液晶介质两次，并且响应于可见波长图像（115）偏振旋转。位于液晶介质（60）外部的偏振器（90）将红外光束（125）的偏振旋转转换为输出强度调制以产生红外图像（130）。反射矩阵镜（40）包括包含金属或半导体/金属化合物的红外反射岛的MxN阵列。反射矩阵反射镜（40）可以通过使用掩模技术将反射材料沉积在栅格图案的二氧化硅层上而形成。或者，可以蚀刻二氧化硅以提供MxN凹陷阵列，然后将其用作反射材料的沉积位置。在该后续实施例中，反射材料可以与基底（30）接触，以便形成肖特基势垒触点。

7. 发明授权

US4826300A Silicon-on-sapphire liquid crystal light valve and method 失效
标题翻译：硅蓝宝石液晶光阀和方法
公开(公告)号：US4826300A
公开(公告)日：1989-05-02
申请号：US79607
申请日：1987-07-30
申请人： Uzi Efron , Paul O. Braatz , Prahalad K. Vasudev , Glenn D. Robertson
发明人： Uzi Efron , Paul O. Braatz , Prahalad K. Vasudev , Glenn D. Robertson
IPC分类号： G02F1/135 , G02F1/13
CPC分类号： G02F1/1354
摘要： An LCLV is formed with a sapphire substrate base, a highly doped, thin silicon epitaxial layer forming an ohmic back contact on a smooth surface of the sapphire substrate, and a lightly doped, high resistivity silicon epitaxial layer in the range of about 20-60 microns thick on the back contact. The use of a sapphire substrate provides a better surface quality and higher resolution than previously available with the semiconductor substrates. Lattice defects in the thin back contact are reduced by the formation of a buried amorphous layer adjacent the sapphire substrate, and subsequent recrystallization thereof using the unamorphized portions of the back contact as recrystallization seeds. The application of the invention to both MOS and Schottky diode LCLVs is discussed.
摘要翻译： LCLV由在蓝宝石衬底的光滑表面上形成欧姆背接触的蓝宝石衬底基底，高度掺杂的薄硅外延层和轻掺杂的高电阻率硅外延层形成，其范围为约20-60 背面接触微米厚。使用蓝宝石衬底提供比以前可用的半导体衬底更好的表面质量和更高的分辨率。通过在蓝宝石衬底附近形成埋置的非晶层，减少薄背接触中的晶格缺陷，随后使用后接触的未变质部分再结晶作为再结晶种子。讨论了将本发明应用于MOS和肖特基二极管LCLV。

8. 发明授权

US4807976A Light valve system and method with pulsed readout 失效
标题翻译：光阀系统和脉冲读数方法
公开(公告)号：US4807976A
公开(公告)日：1989-02-28
申请号：US33319
申请日：1987-04-01
申请人： Michael J. Little , Uzi Efron , Paul O. Braatz , Robert N. Schwartz , Yuri Owechko , Murray S. Welkowsky
发明人： Michael J. Little , Uzi Efron , Paul O. Braatz , Robert N. Schwartz , Yuri Owechko , Murray S. Welkowsky
IPC分类号： G02F1/133 , G02F1/135 , G09G3/36 , G02F1/01
CPC分类号： G02F1/133348 , G02F1/135
摘要： A pulsed readout technique is described for liquid crystal light valves which eliminates the problem of readout beam leakage through the light valve mirror. The readout beam is pulsed on only when the light valve's semiconductor layer is out of a depletion state. This can occur during an accumulation state or, in certain applications, during a specially inserted quiescent period in the light valve voltage cycle. The invention is applicable to light valves with various types of modulating inputs, and can be used with either dielectric or metal matrix mirrors.
摘要翻译：对于液晶光阀描述了脉冲读出技术，其消除了通过光阀镜的读出光束泄漏的问题。只有当光阀的半导体层处于耗尽状态时，读出光束才被脉冲。这可能在累积状态期间或在某些应用中，在光阀电压循环中的特别插入的静止期间发生。本发明适用于具有各种调制输入的光阀，可用于电介质或金属矩阵镜。

9. 发明授权

US4169231A Buried channel to surface channel CCD charge transfer structure 失效
标题翻译：掩埋通道对表面通道的CCD电荷转移结构
公开(公告)号：US4169231A
公开(公告)日：1979-09-25
申请号：US948946
申请日：1978-09-20
申请人： J. Gregory Nash , Jan Grinberg , Paul O. Braatz , Michael Waldner
发明人： J. Gregory Nash , Jan Grinberg , Paul O. Braatz , Michael Waldner
IPC分类号： G11C19/28 , H01L29/768 , H01L29/78
CPC分类号： H01L29/76833 , G11C19/285 , G11C19/287
摘要： A buried channel to surface channel charge coupled device includes a blocking gate and a transfer gate situated between a buried channel gate and a surface gate for transferring electron charge from the buried channel to the surface channel. The blocking gate is located over the buried channel and the transfer gate straddles the buried and surface channels. The blocking gate serves to overcome the potential barrier associated with buried to surface channel transfers.
摘要翻译：掩埋通道至表面沟道电荷耦合器件包括阻挡栅极和位于掩埋沟道栅极和表面栅极之间的传输栅极，用于将电子电荷从掩埋沟道转移到表面沟道。阻挡栅极位于掩埋沟道上方，并且传输门跨越埋入沟道和沟道。阻塞栅极用于克服与掩埋到表面通道传输相关联的势垒。

10. 发明授权

US4032954A Silicon single crystal charge storage diode 失效
标题翻译：硅单晶充电储能二极管
公开(公告)号：US4032954A
公开(公告)日：1977-06-28
申请号：US691652
申请日：1976-06-01
申请人： Jan Grinberg , Lewis M. Fraas , William P. Bleha, Jr. , Paul O. Braatz
发明人： Jan Grinberg , Lewis M. Fraas , William P. Bleha, Jr. , Paul O. Braatz
IPC分类号： G02F1/135 , H01L27/14
CPC分类号： G02F1/1354
摘要： There is disclosed a silver doped silicon single crystal charge storage photodiode substrate suitable for use in an alternating current driven liquid crystal light valve. The gain capability of the charge storage photodiode makes it possible to construct a single crystal substrate ac light valve very similar in structure to that presently being used with a cadmium sulphide photodiode, but having improved operating characteristics and benefitting from a more fully developed manufacturing technology for silicon devices. One specific embodiment of such a single crystal substrate is a silicon substrate doped with a slow recombination center element such as silver.

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