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    • 1. 发明申请
    • METHOD FOR MANUFACTURING A MULTILAYER OF A TRANSPARENT CONDUCTIVE OXIDE
    • 用于制造透明导电氧化物的多层的方法
    • US20130298987A1
    • 2013-11-14
    • US13979794
    • 2012-01-13
    • Paolo LosioOnur CaglarPeter RechtsteinerPerrine CarroyHolger Christ
    • Paolo LosioOnur CaglarPeter RechtsteinerPerrine CarroyHolger Christ
    • H01L31/0224H01L31/18
    • H01L31/022483H01L31/076H01L31/1884Y02E10/548
    • A multi-part transparent conductive zinc oxide layer for a photoelectric conversion device, and a method of producing same. The transparent conductive zinc oxide layer includes at least one basic layer sequence with a varying boron dopant concentration. The basic layer sequence includes a thinner transparent conductive zinc oxide higher-boron-doped layer and a thicker transparent conductive zinc oxide lower-boron-doped layer. The doping density through each individual conductive zinc oxide layer is substantially constant, which is achieved by intentionally doping the thicker transparent conductive zinc oxide lower-boron-doped layer. Optionally, an interlayer may be present between the at least one basic layer sequence and the substrate or an n-doped silicon layer upon which it is disposed. This advantageously permits efficient Edge Isolation by Laser EIL ablation of the transparent conductive zinc oxide layers while maintaining good electrical and optical properties in said layers.
    • 一种用于光电转换装置的多部分透明导电氧化锌层及其制造方法。 透明导电氧化锌层包括具有不同硼掺杂剂浓度的至少一个碱性层序列。 基本层序列包括较薄的透明导电氧化锌高硼掺杂层和较厚的透明导电氧化锌低硼掺杂层。 通过每个单独的导电氧化锌层的掺杂密度基本上是恒定的,其通过有意掺杂较厚的透明导电氧化锌低硼掺杂层来实现。 任选地,中间层可以存在于至少一个碱性层序列和衬底之间或其上配置的n掺杂硅层之间。 这有利地允许通过激光EIL消除透明导电氧化锌层的有效边缘隔离,同时在所述层中保持良好的电学和光学性质。