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1. 发明公开

KR20210008079A LED 백라이트 审中-公开
公开(公告)号：KR20210008079A
公开(公告)日：2021-01-20
申请号：KR20207035638
申请日：2019-05-15
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： MEZOUARI SAMIR , MAKKAOUI AHMAD , STRICKLAND KEITH
IPC分类号： G02F1/13357 , F21V8/00 , G02F1/1335 , G02F1/1362 , G03B21/10 , H01L27/15 , H04N9/31
摘要： 본발명은디스플레이패널과함께사용하기위한 LED 백라이트를제공하며, 백라이트는다음을포함한다: 표면을가지며어레이의표면으로부터광을방출하기위한복수의 LED를포함하는모놀리식 LED 어레이; 복수의시준채널을포함하고, 각각의시준채널이복수의 LED 중하나이상과정렬되도록정렬되되, 시준채널은 LED로부터방출된방출광을 LED 어레이의표면에실질적으로수직인라인으로부터약 +/- 50°의범위의각도로시준하도록구성된모놀리식시준기어레이; 시준된광을무한대로포커싱하고, 복수의렌즈렛을포함하며, 각각의렌즈렛이모놀리식시준기어레이의시준채널과정렬되는, 마이크로렌즈어레이; 및디스플레이패널에마이크로렌즈어레이의빛을집중시키는릴레이렌즈.

2. 发明申请

WO2022117995A1 MICRO LED BEAM COLLIMATION 审中-公开
公开(公告)号：WO2022117995A1
公开(公告)日：2022-06-09
申请号：PCT/GB2021/053060
申请日：2021-11-25
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： MEZOUARI, Samir , BREAKSPEAR, Robert, Leslie , EVESTAFF, Colin
IPC分类号： H01L25/075 , H01L33/58 , H01L33/60
摘要： A method of manufacturing a light emitting diode array comprising a first layer having a plurality of light emitting diodes arranged to emit light from a light emitting surface of the first layer, the method comprising: depositing a layer of dielectric material over the light emitting surface of the first layer; forming a plurality of apertures extending through the layer of dielectric material, each aperture having an internal surface that is at least partially reflective, wherein at least one aperture of the plurality of apertures is centered on and aligned with a light emitting diode of the plurality of light emitting diodes of the first layer, such that light emitted from light emitting diode is collimated as it passes through the at least one aperture.

3. 发明申请

WO2022090694A1 HIGH COLOUR PURITY LIGHT EMITTING DIODE 审中-公开
公开(公告)号：WO2022090694A1
公开(公告)日：2022-05-05
申请号：PCT/GB2021/052752
申请日：2021-10-22
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： KIM, Jun-Youn , SAEED, Anwer , PINOS, Andrea , AZIZ, Mohsin , MURRAY, Ian , SHAKOOR, Abdul
IPC分类号： H01L33/50 , H01L33/46 , H01L33/10 , H01L33/58 , H01L25/075 , H01L33/06
摘要： A colour conversion resonator system (100) comprising: a partially reflective region (114) configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a further partially reflective region (116) configured to at least partially reflect light with the second primary peak wavelength; and a colour conversion resonator cavity comprising at least one quantum well (105a-d), wherein the colour conversion resonator cavity is arranged to: receive input light with the first primary peak wavelength through the partially reflective region; and convert, by the at least one quantum well, at least some of the received input light to provide light of the second primary peak wavelength such that light of the second primary peak wavelength resonates in the cavity and light with the resonant second primary peak wavelength is output through the further partially reflective region, wherein the at least one quantum well is placed to coincide with an antinode of the colour conversion resonator cavity standing wavelength for light of the second primary peak wavelength, thereby enhancing at least one of: intensity, spectral width and directionality of output light with the second primary peak wavelength.

4. 发明申请

WO2021245389A1 MONOLITHIC LED ARRAY AND A PRECURSOR THERETO 审中-公开
公开(公告)号：WO2021245389A1
公开(公告)日：2021-12-09
申请号：PCT/GB2021/051331
申请日：2021-05-28
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： PINOS, Andrea , MEZOUARI, Samir , TAN, WeiSin , WHITEMAN, John Lyle
IPC分类号： H01L27/15 , H01L33/24 , H01L27/153 , H01L27/156 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60
摘要： A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the fourth semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the fourth semiconductor layer has sloped sides parallel to the sloped sides of the third semiconductor layer, (iv) a primary electrical contact on the fourth semiconductor layer, wherein the contact is only on the upper surface portion of the fourth semiconductor layer which is parallel to the plane of the LED array precursor, (v) electrically insulating, optically transparent spacers on the sloped sides of the fourth semiconductor layer, the spacers having an internal surface facing the sloped sides of the fourth semiconductor layer and an opposing external surface and (vi) a reflecting layer, electrically conducting extending over the external surface of the spacers, wherein the third semiconductor layer comprises a plurality of quantum well sub-layers, the quantum well sub-layers having a greater thickness on a portion parallel to the plane of the LED array precursor and a reduced thickness on a portion which is not parallel to the plane of the LED array precursor.

5. 发明申请

WO2021165659A1 HIGH RESOLUTION MONOLITHIC RGB ARRAYS 审中-公开
公开(公告)号：WO2021165659A1
公开(公告)日：2021-08-26
申请号：PCT/GB2021/050363
申请日：2021-02-15
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： PINOS, Andrea , ASHTON, Simon , YU, Xiang , SHIPP, Jonathan
IPC分类号： H01L33/24 , H01L33/38 , H01L33/40 , H01L27/15 , H01L33/62
摘要： A light emitting diode structure comprising a p-type region an n-type region; and a light emitting region for recombination of carriers injectable by the p-type region and the n-type region, wherein at least one of the n-type region and the p-type region is at least partially formed in a via passing through the light emitting region, wherein the via defines the perimeter of a light emitting surface of at least one pixel.

6. 发明申请

WO2021161006A1 ENHANCED COLOUR CONVERSION 审中-公开
公开(公告)号：WO2021161006A1
公开(公告)日：2021-08-19
申请号：PCT/GB2021/050295
申请日：2021-02-09
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： PINOS, Andrea , MEZOUARI, Samir
IPC分类号： H01L33/00 , H01L33/10 , H01L33/46 , H01L33/50 , H01L33/22 , H01L33/08
摘要： A method of forming a light emitting structure, the light emitting structure comprising: a light emitting region configured to emit light having a primary peak wavelength; a partially reflective region; a reflective region; and colour conversion region, wherein the light emitting region is positioned at least partially between the partially reflective layer and the reflective layer and the partially reflective region is positioned at least partially between the colour conversion region and the light emitting region, wherein the partially reflective region is configured to reflect light of a predetermined range of wavelengths and allow light outside the predetermined range of wavelengths to pass through the partially reflective region, wherein the primary peak wavelength is outside the predetermined range of wavelengths.

7. 发明申请

WO2022112750A1 VOLTAGE-CONTROLLABLE MONOLITHIC NATIVE RGB ARRAYS 审中-公开
公开(公告)号：WO2022112750A1
公开(公告)日：2022-06-02
申请号：PCT/GB2021/053035
申请日：2021-11-24
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： PINOS, Andrea , TAN, Wei Sin , MEZOUARI, Samir
IPC分类号： H01L27/15 , H01L33/06 , H01L33/08 , H01L33/14
摘要： A light emitting diode structure comprising: a p-type region; an n-type region; a gate contact; a first light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and a second light emitting region for recombination of carriers injectable by the p-type region and the n-type region, wherein the first light emitting region and the second light emitting region at least partially overlap to form a light emitting surface associated with the first light emitting region and the second light emitting region; wherein the p-type region is at least partially formed in a first channel through the first light emitting region and the second light emitting region, and the n-type region is at least partially formed in a second channel through the first light emitting region and the second light emitting region, wherein the light emitting device is configured such that the wavelength of light emitted by the light emitting surface is controllable by varying a gate voltage applied to one of the p-type and n-type regions by the gate contact thereby to alter carrier injection by the p-type and n-type regions into the first and second light emitting regions

8. 发明申请

WO2022101611A1 PROCESS OF MAKING MONOLITHIC RGB ARRAY 审中-公开
公开(公告)号：WO2022101611A1
公开(公告)日：2022-05-19
申请号：PCT/GB2021/052887
申请日：2021-11-08
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： MEZOUARI, Samir , DUMAS, Geoff
IPC分类号： H01L27/15 , H01L33/50
摘要： A method of forming a multicolour light emitting array, the method comprising: providing a first light emitting device configured to emit light with a first primary peak wavelength and a second light emitting device configured to emit light with the first primary peak wavelength; forming a colour conversion region at least partially associated with the first light emitting device and the second light emitting device, wherein the colour conversion region is configured to absorb light with the first primary peak wavelength and emit light with a second primary peak wavelength longer than the first primary peak wavelength; and photo-bleaching a portion of the colour conversion region associated with the first light emitting device such that the colour conversion region associated with the first light emitting device is at least partially transparent to light with the first primary peak wavelength, thereby to enable light with the first primary peak wavelength to be emitted by a first pixel associated with the first light emitting device and light with the second primary peak wavelength to be emitted by a second pixel associated with the second light emitting device.

9. 发明申请

WO2021245388A1 METHOD OF FORMING AN OPTICAL DEVICE AND OPTICAL DEVICE 审中-公开
公开(公告)号：WO2021245388A1
公开(公告)日：2021-12-09
申请号：PCT/GB2021/051330
申请日：2021-05-28
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： PINOS, Andrea , MEZOUARI, Samir , TAN, WeiSin , WHITEMAN, John Lyle
IPC分类号： H01L33/60 , H01L33/62 , H01L33/58 , H01L25/075 , H01L25/0753 , H01L27/156 , H01L2933/0058 , H01L2933/0066 , H01L33/005 , H01L33/0075 , H01L33/46
摘要： A method of forming an optical device, the method comprising the steps of forming spacers on the substantially vertical sidewalls of a sacrificial mesa, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face contacting the mesa, and a second opposing external face; depositing a reflective, electrically conducting material so as to form a mirror layer on the external face of the spacers; removing the sacrificial mesa so as to form a pocket between the internal faces of the spacers; installing a die having substantially vertical sidewalls into the pocket between the internal faces of the spacers.

10. 发明申请

WO2021234346A1 MONOLITHIC RGB MICRO LED DISPLAY 审中-公开
公开(公告)号：WO2021234346A1
公开(公告)日：2021-11-25
申请号：PCT/GB2021/051137
申请日：2021-05-12
申请人： PLESSEY SEMICONDUCTORS LTD
发明人： PILKINGTON, James , MEZOUARI, Samir , TAN, Wei Sin , WHITEMAN, John , STRICKLAND, Keith
IPC分类号： H01L25/075 , H01L27/15 , H01L33/50
摘要： A method of forming a light emitting diode array comprising a plurality of light emitting pixels, wherein at least one of the light emitting pixels comprises: a light emitting diode configured to emit light of a first primary peak wavelength; and organic semiconductors dispersed in a medium, wherein the organic semiconductors are configured to receive and convert input light of the first primary peak wavelength from the light emitting diode to provide output light of a second primary peak wavelength.

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