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1. 发明申请

WO2010030575A2 ADAPTIVE OPTIC BEAMSHAPING IN LASER PROCESSING SYSTEMS 审中-公开
标题翻译：激光加工系统中的自适应光学波束成形
公开(公告)号：WO2010030575A2
公开(公告)日：2010-03-18
申请号：PCT/US2009056045
申请日：2009-09-04
申请人： ELECTRO SCIENT IND INC , UNRATH MARK A , PIROGOVSKY PETER , BALDWIN LEO
发明人： UNRATH MARK A , PIROGOVSKY PETER , BALDWIN LEO
IPC分类号： G02B27/09
CPC分类号： B23K26/0676 , B23K26/0613 , B23K26/066 , B23K26/705
摘要： A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher M2 values) to provide acceptable shaped beam profiles.
摘要翻译：激光处理系统快速且灵活地修改处理光束，以确定和实施针对特定应用（或应用的子集）的改进的或最佳的光束轮廓。该系统降低了光束整形子系统对激光加工系统变化的敏感性，包括由于制造公差，热漂移，元件性能变化以及系统变化的其他来源造成的变化。某些实施例还操纵较低质量的激光束（较高的M2值）以提供可接受的成形束分布。

2. 发明申请

WO2007140149A1 ULTRASHORT LASER PULSE WAFER SCRIBING 审中-公开
标题翻译：超声波激光脉冲波形切割
公开(公告)号：WO2007140149A1
公开(公告)日：2007-12-06
申请号：PCT/US2007/069273
申请日：2007-05-18
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , ALBELO, Jeffrey, A. , PIROGOVSKY, Peter
发明人： ALBELO, Jeffrey, A. , PIROGOVSKY, Peter
IPC分类号： H01L21/324
CPC分类号： B23K26/364 , B23K26/0624 , B23K26/384 , B23K26/386 , B23K26/389 , B23K26/40 , B23K2201/40 , B23K2203/50
摘要： Systems and methods are provided for scribing wafers (200) with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers (202, 204, 206, 208), a minimum laser ablation threshold based on laser pulse width is determined for each of the layers (202, 204, 206, 208). The highest of the minimum laser ablation thresholds is selected and a beam (216) of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.
摘要翻译：提供了用短激光脉冲刻划晶片（200）的系统和方法，以便降低目标材料的消融阈值。在堆叠的材料层（202,204,206,208）中，针对层（202,204,206,208）中的每一层确定基于激光脉冲宽度的最小激光烧蚀阈值。选择最小激光烧蚀阈值中的最高值，并且产生一个或多个激光脉冲的光束（216），其具有在所选激光烧蚀阈值和所选择的激光烧蚀阈值的大约十倍之间的范围内的能量密度。在一个实施例中，使用在约0.1皮秒至约1000皮秒范围内的激光脉冲宽度。另外或在其他实施例中，选择高脉冲重复频率以增加划线速度。在一个实施例中，脉冲重复频率在大约100kHz到大约100MHz之间的范围内。

3. 发明申请

WO2010111632A3 METHOD FOR LASER SINGULATION OF CHIP SCALE PACKAGES ON GLASS SUBSTRATES 审中-公开
标题翻译：玻璃基板上芯片尺寸包的激光加工方法
公开(公告)号：WO2010111632A3
公开(公告)日：2011-01-13
申请号：PCT/US2010028888
申请日：2010-03-26
申请人： ELECTRO SCIENT IND INC , PIROGOVSKY PETER , ALBELO JEFFREY , O'BRIEN JAMES , OSAKO YASU
发明人： PIROGOVSKY PETER , ALBELO JEFFREY , O'BRIEN JAMES , OSAKO YASU
IPC分类号： H01L21/78 , B23K26/36
CPC分类号： B23K26/38 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/16 , B23K2203/50
摘要： An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates 84, 90 into an assembly 10 containing multiple devices 12. Presented are methods for singulation of compound electronic devices 12 using laser processing 80. The methods presented provide fewer defects such as cracking 58 or chipping 39 of the substrates 36, 50 while minimizing the width of the kerf 142 and maintaining system throughput.
摘要翻译：提出了一种改进的复合电子设备分离方法。通过将两个或多个基板84,90组合到包含多个装置12的组件10中来制造复合电子装置。提出了使用激光加工80对复合电子装置12进行分割的方法。所呈现的方法提供了更少的缺陷，例如开裂58或碎裂同时最小化切口142的宽度并维持系统生产量。

4. 发明申请

WO2009123902A3 LASER MACHINING OF FIRED CERAMIC AND OTHER HARD AND/OR THICK MATERIALS 审中-公开
标题翻译：火焰陶瓷和其他硬和/或厚材料的激光加工
公开(公告)号：WO2009123902A3
公开(公告)日：2010-01-21
申请号：PCT/US2009038319
申请日：2009-03-26
申请人： ELECTRO SCIENT IND INC , O'BRIEN JAMES N , PIROGOVSKY PETER Y , NASHNER MICHAEL S
发明人： O'BRIEN JAMES N , PIROGOVSKY PETER Y , NASHNER MICHAEL S
IPC分类号： B23K26/14 , B23K26/04 , B23K26/36
CPC分类号： B23K26/16 , B23K26/40 , B23K2203/52
摘要： Laser machining fired ceramic and other hard and/or thick materials includes scribing a workpiece with a laser beam along a sequence of parallel laser paths within a cutout region of the workpiece. The scribing creates a kerf in the cutout region that widens as the laser beam advances along the sequence. The sequence may begin with an inner portion of the cutout region and end with an outer edge thereof such that debris is directed away from the laser paths to increase throughput and create a high quality opening in the workpiece. High quality structures may also be cut out from the workpiece. The method includes directing a high velocity stream of gas to an interface of the laser beam and the workpiece to redirect the flow of debris and cool the interface. The method may also adjust a focus depth of the laser beam as it deepens the kerf.
摘要翻译：激光加工烧制陶瓷和其他硬质和/或厚的材料包括在工件的切口区域内沿着一系列平行激光路径用激光束刻划工件。划线在切割区域中产生切割，随着激光束沿着该序列的前进而变宽。该顺序可以从切口区域的内部开始并且以其外边缘结束，使得碎片被引导离开激光路径以增加生产量并且在工件中产生高质量的开口。也可以从工件切出高质量的结构。该方法包括将高速气流引导到激光束和工件的界面，以重定向碎屑流并冷却界面。该方法还可以在其加深切口时调节激光束的聚焦深度。

5. 发明申请

WO2006007570A1 OPTICAL PROXIMITY CORRECTION IN RASTER SCAN PRINTING BASED ON CORNER MATCHING TEMPLATES 审中-公开
标题翻译：基于角膜匹配模板的RASTER扫描印刷中的光学近似校正
公开(公告)号：WO2006007570A1
公开(公告)日：2006-01-19
申请号：PCT/US2005/023590
申请日：2005-07-01
申请人： APPLIED MATERIALS, INC. , BEAUCHAINE, Robert J. , CHABRECK, Thomas E. , HOWELLS, Samuel C. , HUBBARD, John J. , KLATCHKO, Asher , PIROGOVSKY, Peter , TEITZEL, Robin L.
发明人： BEAUCHAINE, Robert J. , CHABRECK, Thomas E. , HOWELLS, Samuel C. , HUBBARD, John J. , KLATCHKO, Asher , PIROGOVSKY, Peter , TEITZEL, Robin L.
IPC分类号： G06T5/00
CPC分类号： G06T5/003 , G06T7/13 , G06T2207/20164 , H04N1/4092
摘要： Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for "post-rasterization" by manipulating the grayscale values of pixel maps.
摘要翻译：提供了用于校正通过光刻形成的图案中的缺陷（例如圆角和线端缩短）的方法和装置。通过操纵像素图的灰度值来补偿这种缺陷“后光栅化”。

6. 发明申请

WO2010036503A3 METHOD OF LASER MICRO-MACHINING STAINLESS STEEL WITH HIGH COSMETIC QUALITY 审中-公开
标题翻译：激光微加工高质量不锈钢的方法
公开(公告)号：WO2010036503A3
公开(公告)日：2010-06-10
申请号：PCT/US2009056016
申请日：2009-09-04
申请人： ELECTRO SCIENT IND INC , LEI WEISHENG , ALPAY MEHMET E , MATSUMOTO HISASHI , HOWERTON JEFFREY , LI GUANGYU , PIROGOVSKY PETER , LU WILSON , SIMENSON GLENN
发明人： LEI WEISHENG , ALPAY MEHMET E , MATSUMOTO HISASHI , HOWERTON JEFFREY , LI GUANGYU , PIROGOVSKY PETER , LU WILSON , SIMENSON GLENN
IPC分类号： B23K26/42 , B23K26/00 , B23K101/34 , B23K103/02
CPC分类号： B23K26/18 , B23K26/009 , B23K26/0622 , B23K26/36 , B23K26/382 , B23K26/40 , B23K2201/34 , B23K2203/05 , B23K2203/10
摘要： A process to laser micro-machine a metal part with a high cosmetic quality surface includes applying a protective coating layer to at least one surface of the part before micro-machining the part with a laser. The protective coating applied to the high quality cosmetic surface can have a thickness of between about 5 mil and about 10 mil, inclusive and have sufficient adhesion strength to adhere to the part without delaminating during processing. The protective coating applied to the machining surface of the part can be a metallic material, such as a metallic foil or tape.
摘要翻译：激光微加工具有高化妆品质量表面的金属部件的方法包括在用激光对部件进行微加工之前，在部件的至少一个表面上施加保护涂层。施加到高质量装饰表面上的保护涂层可以具有约5密耳至约10密耳（包括端值）的厚度，并且具有足够的粘附强度以在处理期间粘附至部件而不分层。施加到部件加工表面的保护涂层可以是金属材料，例如金属箔或带。

7. 发明申请

WO2008027634A3 INFRARED LASER WAFER SCRIBING USING SHORT PULSES 审中-公开
标题翻译：使用短脉冲的红外激光波形
公开(公告)号：WO2008027634A3
公开(公告)日：2009-11-26
申请号：PCT/US2007069323
申请日：2007-05-21
申请人： ELECTRO SCIENT IND INC , O'BRIEN JAMES N , PIROGOVSKY PETER
发明人： O'BRIEN JAMES N , PIROGOVSKY PETER
IPC分类号： H01L21/78
CPC分类号： B23K26/38 , B23K26/0624 , B23K26/40 , B23K2201/40 , B23K2203/50
摘要： Systems and methods are provided for scribing wafers (300) to efficiently ablate passivation and/or encapsulation layers (302, 304) while reducing or eliminating chipping and cracking in the passivation and/or encapsulation layers (302, 304). Short laser pulses are used to provide high peak powers and reduce the ablation threshold. In one embodiment, the scribing is performed by a q-switched CO2 laser.
摘要翻译：提供了用于划线晶片（300）以有效地消融钝化和/或封装层（302,304）同时减少或消除钝化和/或封装层（302,304）中的切屑和破裂的系统和方法。使用短激光脉冲提供高峰值功率并降低消融阈值。在一个实施例中，划线由q切换CO 2激光器执行。

8. 发明申请

WO2009123902A2 LASER MACHINING OF FIRED CERAMIC AND OTHER HARD AND/OR THICK MATERIALS 审中-公开
标题翻译：火焰陶瓷和其他硬和/或厚材料的激光加工
公开(公告)号：WO2009123902A2
公开(公告)日：2009-10-08
申请号：PCT/US2009/038319
申请日：2009-03-26
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , O'BRIEN, James, N. , PIROGOVSKY, Peter, Y. , NASHNER, Michael, S.
发明人： O'BRIEN, James, N. , PIROGOVSKY, Peter, Y. , NASHNER, Michael, S.
CPC分类号： B23K26/16 , B23K26/40 , B23K2203/52
摘要： Laser machining fired ceramic and other hard and/or thick materials includes scribing a workpiece with a laser beam along a sequence of parallel laser paths within a cutout region of the workpiece. The scribing creates a kerf in the cutout region that widens as the laser beam advances along the sequence. The sequence may begin with an inner portion of the cutout region and end with an outer edge thereof such that debris is directed away from the laser paths to increase throughput and create a high quality opening in the workpiece. High quality structures may also be cut out from the workpiece. The method includes directing a high velocity stream of gas to an interface of the laser beam and the workpiece to redirect the flow of debris and cool the interface. The method may also adjust a focus depth of the laser beam as it deepens the kerf.
摘要翻译：激光加工烧制陶瓷和其他硬质和/或厚的材料包括在工件的切口区域内沿着一系列平行激光路径用激光束刻划工件。划线在切割区域中产生切割，随着激光束沿着该序列的前进而变宽。该顺序可以从切口区域的内部开始并且以其外边缘结束，使得碎片被引导离开激光路径以增加生产量并且在工件中产生高质量的开口。也可以从工件切出高质量的结构。该方法包括将高速气流引导到激光束和工件的界面，以重定向碎屑流并冷却界面。该方法还可以在其加深切口时调节激光束的聚焦深度。

9. 发明申请

WO2008027634A2 INFRARED LASER WAFER SCRIBING USING SHORT PULSES 审中-公开
标题翻译：使用短脉冲的红外激光波形
公开(公告)号：WO2008027634A2
公开(公告)日：2008-03-06
申请号：PCT/US2007/069323
申请日：2007-05-21
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , O'BRIEN, James N. , PIROGOVSKY, Peter
发明人： O'BRIEN, James N. , PIROGOVSKY, Peter
CPC分类号： B23K26/38 , B23K26/0624 , B23K26/40 , B23K2201/40 , B23K2203/50
摘要： Systems and methods are provided for scribing wafers (300) to efficiently ablate passivation and/or encapsulation layers (302, 304) while reducing or eliminating chipping and cracking in the passivation and/or encapsulation layers (302, 304). Short laser pulses are used to provide high peak powers and reduce the ablation threshold. In one embodiment, the scribing is performed by a q-switched CO 2 laser.
摘要翻译：提供了用于划线晶片（300）以有效地消融钝化和/或封装层（302,304）同时减少或消除钝化和/或封装层（302,304）中的切屑和破裂的系统和方法。使用短激光脉冲提供高峰值功率并降低消融阈值。在一个实施例中，划线由q切换CO 2激光器执行。

10. 发明申请

WO2010111632A2 METHOD FOR LASER SINGULATION OF CHIP SCALE PACKAGES ON GLASS SUBSTRATES 审中-公开
标题翻译：玻璃基板上芯片尺寸包的激光加工方法
公开(公告)号：WO2010111632A2
公开(公告)日：2010-09-30
申请号：PCT/US2010/028888
申请日：2010-03-26
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , PIROGOVSKY, Peter , ALBELO, Jeffrey , O'BRIEN, James , OSAKO, Yasu
发明人： PIROGOVSKY, Peter , ALBELO, Jeffrey , O'BRIEN, James , OSAKO, Yasu
IPC分类号： H01L21/78 , B23K26/36
CPC分类号： B23K26/38 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/16 , B23K2203/50
摘要： An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates 84, 90 into an assembly 10 containing multiple devices 12. Presented are methods for singulation of compound electronic devices 12 using laser processing 80. The methods presented provide fewer defects such as cracking 58 or chipping 39 of the substrates 36, 50 while minimizing the width of the kerf 142 and maintaining system throughput.
摘要翻译：提出了一种改进的复合电子设备分离方法。通过将两个或多个基板84,90组合到包含多个装置12的组件10中来制造复合电子装置。提出了使用激光加工80对复合电子装置12进行分割的方法。所呈现的方法提供了更少的缺陷，例如开裂58或碎裂同时最小化切口142的宽度并维持系统生产量。

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