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    • 2. 发明申请
    • METHODS AND SYSTEMS FOR PERFORMING LITHOGRAPHY, METHODS FOR ALIGNING OBJECTS RELATIVE TO ONE ANOTHER, AND NANOIMPRINTING MOLDS HAVING NON-MARKING ALIGNMENT FEATURES
    • 用于执行算术的方法和系统,与其他方法对准对象的方法,以及具有非标记对齐特征的纳米粒子
    • WO2008016651A2
    • 2008-02-07
    • PCT/US2007/017195
    • 2007-07-30
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P.PICCIOTTO, CarlGAO, JunWU, WeiYU, Zhaoning
    • PICCIOTTO, CarlGAO, JunWU, WeiYU, Zhaoning
    • G03F9/7092G03F9/7038G03F9/7042G03F9/7088
    • Methods of performing lithography include calculating a displacement vector (74) for a lithography tool (50) using an image (60) of a portion of the lithography tool (50) and a portion of a substrate (10) and an additional image (28) of a portion of an additional lithography tool (30) and a portion of the substrate (10). Methods of aligning objects include positioning a second object (30) proximate a first object (10) and acquiring a first image (38) illustrating a feature (32) on a surface of the second object (30) and a feature (18) on a surface of the first object (10). As additional object (50) is positioned proximate the first object (10), and an additional image (60) is acquired that illustrates a feature (52) on a surface of the additional object (50) and the feature (18) on the surface of the first object (10). The additional image (60) is compared with the first image (38). Imprint molds (30, 50) include at least one non-marking reference feature (32, 52) on animprinting surface of the imprint molds (30, 50).
    • 执行光刻的方法包括使用光刻工具(50)的一部分的图像(60)和基底(10)的一部分和附加图像(28)来计算光刻工具(50)的位移矢量(74) )附加光刻工具(30)的一部分和基底(10)的一部分。 对准对象的方法包括定位邻近第一物体(10)的第二物体(30)并且获取第二图像(38),该第一图像(38)示出在第二物体(30)的表面上的特征(32) 第一物体(10)的表面。 随着附加物体(50)被定位在第一物体(10)附近,并且获取附加图像(60),其示出了附加物体(50)的表面上的特征(52)和 第一物体(10)的表面。 将附加图像(60)与第一图像(38)进行比较。 压印模具(30,50)包括在压印模具(30,50)的印模表面上的至少一个非标记参考特征(32,52)。
    • 6. 发明申请
    • MULTIPLE LAYER ALIGNMENT SENSING
    • 多层排列感应
    • WO2006058192A3
    • 2006-08-03
    • PCT/US2005042694
    • 2005-11-23
    • HEWLETT PACKARD DEVELOPMENT COPICCIOTTO CARL EGAO JUN
    • PICCIOTTO CARL EGAO JUN
    • G03F9/00
    • G03F9/7003G03F9/7038G03F9/7088
    • Using an imaging system (104) in relation to a plurality of material layers (114, 116) is described, the material layers being separated by a distance greater than a depth of field of the imaging system. A focal plane (106) of the imaging system and a first (114) of the plurality of material layers are brought into correspondence. A first image including at least a portion of the first material layer (114) having a first feature of interest thereon (116) is stored. The focal plane (106) of the imaging system and a second (118) of the plurality of material layers are brought into correspondence. A second image including at least a portion of the second material layer (118) having a second feature of interest thereon (120) is acquired. The first and second images are processed for automatic computation of an alignment measurement between the first and second features of interest.
    • 描述了关于多个材料层(114,116)使用成像系统(104),材料层以大于成像系统的景深的距离分开。 使成像系统的焦平面(106)和多个材料层中的第一个(114)对应。 存储包括其上具有第一感兴趣特征(116)的第一材料层(114)的至少一部分的第一图像。 成像系统的焦平面(106)和多个材料层中的第二个(118)对应。 获取包括其上具有第二感兴趣特征(120)的第二材料层(118)的至少一部分的第二图像。 处理第一和第二图像以自动计算第一和第二感兴趣特征之间的对准测量值。
    • 8. 发明申请
    • LITHOGRAPHY ALIGNMENT SYSTEM AND METHOD USING FEEDBACK CONTROL BASED ON NANOSCALE DISPLACEMNT SENSING AND ESTIMATION
    • 使用基于纳米尺度位移感测和估计的反馈控制的平移对准系统和方法
    • WO2008048595A3
    • 2008-06-19
    • PCT/US2007022067
    • 2007-10-16
    • HEWLETT PACKARD DEVELOPMENT COPARK INKYUWU WEIGAO JUNPICCIOTTO CARL
    • PARK INKYUWU WEIGAO JUNPICCIOTTO CARL
    • G03F9/00
    • G03F9/7038G03F9/7088G03F9/7092G03F9/7096
    • A contact lithography alignment system (500) and methods (100, 200, 400) use nanoscale displacement sensing and estimation (nDSE) 300, 300' to maintain an alignment and compensate for a disturbance of one or more objects (510) during contact lithography. A method (100) of maintaining an alignment includes establishing (110) an initial alignment of one or more objects and employing (120, 200) nDSE-based feedback control of relative positions of one or more of the objects to maintain the alignment during contact lithography. A method (400) of disturbance compensation includes acquiring (410) a first image, acquiring (210, 420) a second image, estimating (220, 430) an alignment error using (120, 200) nDSE applied to the first and second images, and adjusting (230, 440) a relative position to reduce the alignment error. The contact lithography system (500) includes an optical sensor (520), a feedback processor (530, 600) providing nDSE and a position controller (540) that adjusts relative positions of one or more objects to reduce an alignment error determined using the nDSE.
    • 接触光刻对准系统(500)和方法(100,200,400)使用纳米尺度位移感测和估计(nDSE)300,300'来保持对准并补偿接触光刻期间的一个或多个物体(510)的干扰 。 保持对准的方法(100)包括建立(110)一个或多个对象的初始对准,并采用(120,200)基于nDSE的反馈控制,以反映一个或多个对象的相对位置以保持接触期间的对准 光刻。 干扰补偿的方法(400)包括获取(410)第一图像,获取(210,420)第二图像,使用施加到第一和第二图像的(120,200)nDSE来估计(220,430)对准误差 ,并调整(230,440)相对位置以减小对准误差。 接触光刻系统(500)包括光学传感器(520),提供nDSE的反馈处理器(530,600)和调整一个或多个物体的相对位置以减少使用nDSE确定的对准误差的位置控制器(540) 。
    • 10. 发明申请
    • MULTIPLE LAYER ALIGNMENT SENSING
    • 多层对准感应
    • WO2006058192A2
    • 2006-06-01
    • PCT/US2005/042694
    • 2005-11-23
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.PICCIOTTO, Carl, E.GAO, Jun
    • PICCIOTTO, Carl, E.GAO, Jun
    • G03F9/7003G03F9/7038G03F9/7088
    • Using an imaging system (104) in relation to a plurality of material layers (114, 116) is described, the material layers being separated by a distance greater than a depth of field of the imaging system. A focal plane (106) of the imaging system and a first (114) of the plurality of material layers are brought into correspondence. A first image including at least a portion of the first material layer (114) having a first feature of interest thereon (116) is stored. The focal plane (106) of the imaging system and a second (118) of the plurality of material layers are brought into correspondence. A second image including at least a portion of the second material layer (118) having a second feature of interest thereon (120) is acquired. The first and second images are processed for automatic computation of an alignment measurement between the first and second features of interest.
    • 描述了相对于多个材料层(114,116)使用成像系统(104),材料层被分离大于成像系统的景深的距离。 使成像系统的焦平面(106)和多个材料层中的第一(114)对应。 存储包括其上具有感兴趣的第一特征的第一材料层(114)的至少一部分的第一图像(116)。 使成像系统的焦平面(106)和多个材料层中的第二(118)对应。 获取包括其上具有感兴趣的第二特征的第二材料层(118)的至少一部分的第二图像(120)。 处理第一和第二图像以自动计算感兴趣的第一和第二特征之间的对准测量。