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    • 3. 发明申请
    • METHOD OF MONOLITHICALLY INTEGRATED OPTOELECTRICS
    • 单片集成光电的方法
    • WO2014055562A1
    • 2014-04-10
    • PCT/US2013/062926
    • 2013-10-01
    • PAYNE, Justin
    • PAYNE, Justin
    • H01L27/14G01V8/10
    • H01L27/144H01L27/14601H01L27/14618H01L2924/0002H01L2924/00
    • A monolithically integrated sensor is disclosed in the form of light detector(s), visible light emitter(s) and associated control circuit(s) monolithically integrated on a single silicon microchip. The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate. The emitter structures consist of III-V compound semiconductor hetero-epitaxial layers deposited on the surface of the silicon substrate. The control circuits are fabricated using traditional CMOS high volume manufacturing techniques. The sensor assembly is designed to be processed in a traditional CMOS wafer fab. The sensor assembly is further designed to be packaged at the wafer level.
    • 以单片集成在单个硅微芯片上的光检测器,可见光发射器和相关联的控制电路的形式公开了单片集成传感器。 检测器结构由p-i-n光电二极管结构组成,两者均扩散到并沉积在硅衬底的表面上。 发射极结构由沉积在硅衬底表面上的III-V族化合物半导体异质外延层构成。 控制电路使用传统的CMOS大容量制造技术制造。 传感器组件设计为在传统的CMOS晶圆厂中进行处理。 传感器组件进一步设计成在晶片级封装。
    • 9. 发明申请
    • DEVICE OF MONOLITHICALLY INTEGRATED OPTOELECTRICS
    • 单片集成光电器件
    • WO2014055560A1
    • 2014-04-10
    • PCT/US2013/062924
    • 2013-10-01
    • PAYNE, Justin
    • PAYNE, Justin
    • H01L31/04
    • H01L31/1804G01S7/4811G01S17/026H01L31/103H01L31/105H01L31/18
    • A method is disclosed for fabricating optoelectronic component structures and traditional circuit elements on a single silicon substrate. Specific examples of optoelectronic components include, but are not limited to: photodiode structures, light emitter structures and waveguide structures. Traditional circuit elements include transistors, diodes, resistors, capacitors and associated metalized interconnects. The method of fabrication is compatible with traditional CMOS, Bi-CMOS and Bipolar processing requirements and design rules. The method consists of a set of processing steps to allow hetero-epitaxial deposition of III-V compound semiconductor films on to a suitably prepared silicon surface, a set of processing steps to allow this deposited wafer to continue processing in a traditional CMOS, Bi-CMOS or Bipolar processing line without the risk of contamination, and a set of steps to allow the fabrication of p-n and p-i-n photodiode/detector structures in parallel with the traditional CMOS, Bi-CMOS or Bipolar processing flow that produces the traditional circuit elements and also a set of steps for producing dielectric waveguides and optically black isolation films. The disclosed method also allows for wafer level encapsulation and wafer level packaging of the as-fabricated integrated optoelectronic chip.
    • 公开了在单个硅衬底上制造光电子元件结构和传统电路元件的方法。 光电子部件的具体实例包括但不限于:光电二极管结构,光发射器结构和波导结构。 传统的电路元件包括晶体管,二极管,电阻器,电容器和相关联的金属化互连。 制造方法与传统的CMOS,Bi-CMOS和双极加工要求和设计规则兼容。 该方法包括一组处理步骤,以允许将III-V族化合物半导体膜异质外延沉积到适当制备的硅表面上,一组处理步骤允许该沉积的晶片在传统的CMOS,Bi- CMOS或双极处理线,没有污染的风险,以及一组步骤,允许制造pn和pin光电二极管/检测器结构与传统CMOS,Bi-CMOS或双极处理流程并行生成传统电路元件,并且还 用于制造介质波导和光学黑色隔离膜的一组步骤。 所公开的方法还允许制造的集成光电芯片的晶片级封装和晶片级封装。