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    • 4. 发明申请
    • LIGHT EMITTING DIODE USING ZINC OXIDE-BASED ELECTRODES AND A FABRICATION METHOD THEREOF
    • 使用基于氧化锌的电极的发光二极管及其制造方法
    • WO2010036030A3
    • 2010-07-01
    • PCT/KR2009005434
    • 2009-09-23
    • KWANGJU INST SCI & TECHPARK SEONG-JUPARK TAE-YOUNGOH MIN-SUKCHOI YONG-SUKKANG JANG-WON
    • PARK SEONG-JUPARK TAE-YOUNGOH MIN-SUKCHOI YONG-SUKKANG JANG-WON
    • H01L33/40
    • H01L33/42H01L33/22H01L33/32H01L2933/0091
    • Disclosed are a light emitting diode using zinc oxide-based electrodes with improved electrical properties and a fabrication method thereof. In one embodiment of the present invention, a light emitting diode comprises a luminous structure having a first semiconductor layer, an active layer and a second semiconductor layer disposed sequentially on a base substrate; and a current spreading layer disposed on an upper face of the luminous structure, the current spreading layer having a zinc oxide-based thin film and zinc oxide-based nanorods protruding from the zinc oxide-based thin film. Furthermore, a fabrication method of a light emitting diode comprises the steps of: forming a luminous structure having a first semiconductor layer, an active layer and a second semiconductor layer disposed sequentially on a base substrate; and forming a current spreading layer on an upper face of the luminous structure by a MOCVD growth method to form a zinc oxide-based thin film and zinc oxide-based nanorods protruding from the zinc oxide-based thin film.
    • 公开了一种使用具有改进的电性能的氧化锌基电极的发光二极管及其制造方法。 在本发明的一个实施例中,发光二极管包括具有依次设置在基底基板上的第一半导体层,有源层和第二半导体层的发光结构; 以及配置在发光体的上表面的电流扩散层,所述电流扩散层具有氧化锌系薄膜和从所述氧化锌系薄膜突出的氧化锌系纳米棒。 此外,发光二极管的制造方法包括以下步骤:形成具有依次设置在基底基板上的第一半导体层,有源层和第二半导体层的发光体; 通过MOCVD生长法在发光体的上面形成电流扩散层,形成从氧化锌系薄膜突出的氧化锌系薄膜和氧化锌系纳米棒。
    • 8. 发明申请
    • PROTECTION DEVICE FOR SETTOP BOX CONDITIONAL ACCESS CHIP
    • 用于设置盒条件访问芯片的保护装置
    • WO2006101346A1
    • 2006-09-28
    • PCT/KR2006/001043
    • 2006-03-22
    • PARK, Tae Young
    • PARK, Tae Young
    • H04N5/44
    • H04N21/41
    • The present invention relates to a protection device for a conditional access chip within a settop box, in which it can prevent the conditional access chip within the settop box from being duplicated and distributed due to malicious detachment. To prevent epoxy from being melt due to heating of a top surface of the conditional access chip within the settop box, protection means having adiabaticity and a predetermined size is laminated on the top surface of epoxy. The protection means includes a protection plate, as a flat panel having a predetermined thickness, which is laminated on the top surface of epoxy that prevents the detachment of the conditional access chip.
    • 本发明涉及一种用于机顶盒内的条件接入芯片的保护装置,其中可防止机顶盒内的条件接入芯片由于恶意分离而被复制和分发。 为了防止环氧树脂由于机顶盒内的条件访问芯片的顶表面的加热而熔化,在环氧树脂的顶表面上层压具有绝热性和预定尺寸的保护装置。 保护装置包括保护板,作为具有预定厚度的平板,其被层压在防止条件访问芯片脱离的环氧树脂的顶表面上。