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1. 发明申请

WO2008140211A1 APPARATUS FOR REMOVING FOOT HORNY SKIN 审中-公开
标题翻译：用于去除蹄部皮肤的装置
公开(公告)号：WO2008140211A1
公开(公告)日：2008-11-20
申请号：PCT/KR2008/002582
申请日：2008-05-08
申请人： PARK, Seong Hwan
发明人： PARK, Seong Hwan
IPC分类号： A47K7/04
CPC分类号： A61B17/54 , A61B17/320068 , A61B2017/00398 , A61B2017/306 , A61B2017/320008 , A61B2017/320078
摘要： In the horny skin removing apparatus according to the present invention, since the grinding p aper grinds and removes by means of rotational force and vibrations, it is efficient and operates with a small force. Since the grinding plate is connected with the rotary shaft of the motor through the bearing, when a relatively large friction force is applied to the grinding plate, it might slip with the help of the bearing between the grinding plate and the motor shaft. So, an over load is not applied to the motor. Since a disposable grinding paper is installed in the grinding plate, sanitation problem can be prevented, and one horny skin removing apparatus might by used by multiple users, and it is possible to smoothly and effectively remove the horny skins.
摘要翻译：在根据本发明的角质皮肤去除装置中，由于磨削辊通过旋转力和振动研磨和去除，所以它是有效的并以较小的力操作。由于研磨板通过轴承与电动机的旋转轴连接，因此当磨削板上施加相对较大的摩擦力时，可能会借助于研磨板和电机轴之间的轴承而滑动。因此，不会对电机施加过载。由于在研磨盘中安装一次性研磨纸，因此可以防止卫生问题，并且可以通过多个使用者使用一个角质皮肤去除装置，并且可以平滑有效地除去角质皮肤。

2. 发明申请

WO2007021085A1 PHOTORESIST STRIPPER COMPOSITION FOR SEMICONDUCTOR MANUFACTURING 审中-公开
标题翻译：用于半导体制造的光电子剥离器组合物
公开(公告)号：WO2007021085A1
公开(公告)日：2007-02-22
申请号：PCT/KR2006/003085
申请日：2006-08-05
申请人： TECHNO SEMICHEM CO., LTD. , KIM, Hyun Tak , PARK, Seong Hwan , LIM, Jung Hun , KIM, Sung Bae , JEONG, Chan Jin , BAEK, Kui Jong , HAHN, Woong , LEE, Sang Won , LEE, Gun-Woong
发明人： KIM, Hyun Tak , PARK, Seong Hwan , LIM, Jung Hun , KIM, Sung Bae , JEONG, Chan Jin , BAEK, Kui Jong , HAHN, Woong , LEE, Sang Won , LEE, Gun-Woong
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G03F7/426
摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt% of hydrazine hydrate or amine compound; 20~40 wt% of polar solvent; 0.01-3 wt% of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt% of monoalcohol compound of C2-C10; and 40-70 wt% of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
摘要翻译：本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。更具体地，光致抗蚀剂剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40wt％极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性，在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

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