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1. 发明授权

US07626210B2 Low profile side emitting LED 有权
标题翻译：薄型侧发光LED
公开(公告)号：US07626210B2
公开(公告)日：2009-12-01
申请号：US11423419
申请日：2006-06-09
申请人： Oleg Borisovich Shchekin , Mark Pugh , Gerard Harbers , Michael R. Krames , John E. Epler
发明人： Oleg Borisovich Shchekin , Mark Pugh , Gerard Harbers , Michael R. Krames , John E. Epler
IPC分类号： H01L29/20
CPC分类号： H01L33/50 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/60 , H01L2224/13
摘要： Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.
摘要翻译：描述了低侧面发光LED，其中所有光在与发光有源层的表面大致平行的相对窄的角度内被有效地发射。 LED使得能够创建非常薄的背光用于背光LCD。在一个实施例中，LED是倒装芯片，其中n和p电极位于LED的同一侧，并且LED电极侧朝下安装在底座上。在LED的顶表面上提供反射器，使得入射在反射器上的光被反射回有源层，最终通过LED的侧表面离开。在半导体层和反射器之间布置波导层和/或一个或多个磷光体层以增加侧面发射面积以提高效率。可以产生厚度在0.2-0.4mm之间的侧面发射LED。

2. 发明申请

US20080315228A1 LOW PROFILE SIDE EMITTING LED WITH WINDOW LAYER AND PHOSPHOR LAYER 有权
标题翻译：具有窗户层和磷光体层的低剖面发光LED
公开(公告)号：US20080315228A1
公开(公告)日：2008-12-25
申请号：US11954712
申请日：2007-12-12
申请人： Michael R. Krames , Gerd Mueller , Oleg Borisovich Shchekin , Mark Pugh , Gerard Harbers , John E. Epler , Serge Bierhuizen , Regina Mueller-Mach
发明人： Michael R. Krames , Gerd Mueller , Oleg Borisovich Shchekin , Mark Pugh , Gerard Harbers , John E. Epler , Serge Bierhuizen , Regina Mueller-Mach
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/385 , H01L33/405 , H01L33/46 , H01L33/60 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/13 , H01L2924/00014 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.
摘要翻译：描述了产生白光的低轮廓侧面发射LED，其中所有光在通常平行于发光有源层的表面的相对窄的角度内发射。 LED使得能够创建非常薄的背光用于背光LCD。在一个实施例中，LED发射蓝光，并且是LED和LED的同一侧上的n和p电极的倒装芯片。与LED分开，透明晶片在其上沉积有红色和绿色磷光体层。测试荧光体色温发射，并且映射色温与晶片上的位置。在透明晶片上形成反射器。将透明晶片分离，并将荧光体/窗口骰子与蓝色LED匹配以实现目标白光色温。然后将磷光体/窗口固定到LED。

3. 发明申请

US20070284600A1 Low Profile Side Emitting LED 有权
标题翻译：低边侧发光LED
公开(公告)号：US20070284600A1
公开(公告)日：2007-12-13
申请号：US11423419
申请日：2006-06-09
申请人： Oleg Borisovich Shchekin , Mark Pugh , Gerard Harbers , Michael R. Krames , John E. Epler
发明人： Oleg Borisovich Shchekin , Mark Pugh , Gerard Harbers , Michael R. Krames , John E. Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/60 , H01L2224/13
摘要： Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.
摘要翻译：描述了低侧面发光LED，其中所有光在与发光有源层的表面大致平行的相对窄的角度内被有效地发射。 LED使得能够创建非常薄的背光用于背光LCD。在一个实施例中，LED是倒装芯片，其中n和p电极位于LED的同一侧，并且LED电极侧朝下安装在底座上。在LED的顶表面上提供反射器，使得入射在反射器上的光被反射回有源层，最终通过LED的侧表面离开。在半导体层和反射器之间布置波导层和/或一个或多个磷光体层以增加侧面发射面积以提高效率。可以产生厚度在0.2-0.4mm之间的侧面发射LED。

4. 发明授权

US09046634B2 Thin flash or video recording light using low profile side emitting LED 有权
标题翻译：薄型闪光灯或视频记录灯采用低边侧发光LED
公开(公告)号：US09046634B2
公开(公告)日：2015-06-02
申请号：US11763311
申请日：2007-06-14
申请人： Oleg Borisovich Shchekin , John Epler , Gregory W. Eng , Serge Bierhuizen , Gerard Harbers
发明人： Oleg Borisovich Shchekin , John Epler , Gregory W. Eng , Serge Bierhuizen , Gerard Harbers
IPC分类号： H01L33/00 , F21V8/00 , H01L33/40 , H01L33/46
CPC分类号： G02B6/0073 , H01L33/405 , H01L33/46 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/13 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.
摘要翻译：描述了用于照相机的非常薄的闪光模块，其不会出现作为照明对象的点光源。因此，闪光灯对该主题的反感较少。在一个实施例中，发光表面积为约5mm×10mm。光学耦合到实心光导体的低轮廓侧面发光LED使得闪光灯模块能够比2mm更薄。闪光模块也可以连续通电用于视频记录。该模块对于手机相机和其他薄型相机特别有用。

5. 发明申请

US20130187184A1 WAVELENGTH CONVERTED LIGHT EMITTING DEVICE 有权
标题翻译：波长转换发光装置
公开(公告)号：US20130187184A1
公开(公告)日：2013-07-25
申请号：US13824014
申请日：2011-09-23
申请人： Michael David Camras , Oleg Borisovich Shchekin , Rafael Ignacio Aldaz Granell , Patrick Nolan Grillot , Frank Michael Steranka
发明人： Michael David Camras , Oleg Borisovich Shchekin , Rafael Ignacio Aldaz Granell , Patrick Nolan Grillot , Frank Michael Steranka
IPC分类号： H01L33/50
CPC分类号： H01L33/504 , H01L25/0753 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/44 , H01L33/507 , H01L33/508 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Embodiments of the invention include a semiconductor light emitting device (10) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element (12) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element (12) is attached to a support (51) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions (46) of semiconductor wavelength converting material and at least one second region (48) without semiconductor wavelength converting material disposed between the at least two first regions.
摘要翻译：本发明的实施例包括能够发射具有第一峰值波长的第一光的半导体发光器件（10）和能够吸收第一光并发射具有第二峰值波长的第二光的半导体波长转换元件（12）。半导体波长转换元件（12）附接到支撑件（51）并且设置在由半导体发光器件发射的光的路径中。半导体波长转换元件被图案化以包括至少两个半导体波长转换材料的第一区域（46）和至少一个第二区域（48），而不设置在至少两个第一区域之间的半导体波长转换材料。

6. 发明授权

US10056531B2 Method of processing a semiconductor structure 有权
公开(公告)号：US10056531B2
公开(公告)日：2018-08-21
申请号：US14238477
申请日：2012-08-21
申请人： Jerome Chandra Bhat , Daniel Alexander Steigerwald , Michael David Camras , Han Ho Choi , Nathan Fredrick Gardner , Oleg Borisovich Shchekin
发明人： Jerome Chandra Bhat , Daniel Alexander Steigerwald , Michael David Camras , Han Ho Choi , Nathan Fredrick Gardner , Oleg Borisovich Shchekin
IPC分类号： H01L33/50 , H01L33/00 , H01L21/66
CPC分类号： H01L33/507 , H01L22/24 , H01L33/0079 , H01L33/0095 , H01L33/501 , H01L2933/0041
摘要： A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

7. 发明申请

US20150129916A1 LIGHT EMITTING DEVICE WITH REMOTE NANOSTRUCTURED PHOSPHOR 有权
标题翻译：具有远程纳米结构的磷光体的发光装置
公开(公告)号：US20150129916A1
公开(公告)日：2015-05-14
申请号：US14398764
申请日：2013-05-02
申请人： Debasis Bera , Mark Melvin Butterworth , Oleg Borisovich Shchekin
发明人： Debasis Bera , Mark Melvin Butterworth , Oleg Borisovich Shchekin
IPC分类号： H01L33/50 , H01L33/64
CPC分类号： H01L33/504 , H01L33/46 , H01L33/483 , H01L33/502 , H01L33/507 , H01L33/508 , H01L33/60 , H01L33/64 , H01L33/644 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention include a light emitting device (LED 10), a first wavelength converting material (13, in a matrix 14 to form a layer 12), and a second wavelength converting material (forming layer 16). The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material (13) is spaced apart from the light emitting device (10).
摘要翻译：本发明的实施例包括发光器件（LED 10），第一波长转换材料（13，在矩阵14中形成层12）和第二波长转换材料（形成层16）。第一波长转换材料包括纳米结构波长转换材料。纳米结构波长转换材料包括具有至少一个尺寸不超过100nm的尺寸的颗粒。第一波长转换材料（13）与发光器件（10）间隔开。

8. 发明授权

US08779448B2 Illumination system with light source, radiation converting element and filter 有权
标题翻译：照明系统带光源，辐射转换元件和滤光片
公开(公告)号：US08779448B2
公开(公告)日：2014-07-15
申请号：US13993086
申请日：2011-12-12
申请人： Cornelis Reinder Ronda , Oleg Borisovich Shchekin
发明人： Cornelis Reinder Ronda , Oleg Borisovich Shchekin
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/44
摘要： The invention relates to an illumination system comprising 1) a light source arranged to emit primary radiation, 2) a radiation converting element arranged to convert at least part of the primary radiation into secondary radiation, and 3) a filter arranged to block radiation generated in the illumination system having a wavelength shorter than a certain cut-off wavelength. According to the invention, the filter is designed to block a part of the secondary radiation by having arranged the cut-off wavelength of the filter in the emission spectrum of the radiation converting element. Illumination devices according to this design show emission spectra with small bandwidth.
摘要翻译：本发明涉及一种照明系统，包括：1）布置成发射主辐射的光源; 2）辐射转换元件，被布置成将至少部分初级辐射转换成次级辐射;以及3）滤光器，所述照明系统的波长比特定的截止波长短。根据本发明，滤光器设计成通过在辐射转换元件的发射光谱中布置滤光器的截止波长来阻挡二次辐射的一部分。根据本设计的照明装置显示带宽小的发射光谱。

9. 发明申请

US20140179029A1 METHOD OF PROCESSING A SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：加工半导体结构的方法
公开(公告)号：US20140179029A1
公开(公告)日：2014-06-26
申请号：US14238477
申请日：2012-08-21
申请人： Jerome Chandra Bhat , Daniel Alexander Steigerwald , Michael David Camras , Han Ho Choi , Nathan Fredrick Gardner , Oleg Borisovich Shchekin
发明人： Jerome Chandra Bhat , Daniel Alexander Steigerwald , Michael David Camras , Han Ho Choi , Nathan Fredrick Gardner , Oleg Borisovich Shchekin
IPC分类号： H01L33/50 , H01L21/66
CPC分类号： H01L33/507 , H01L22/24 , H01L33/0079 , H01L33/0095 , H01L33/501 , H01L2933/0041
摘要： A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.
摘要翻译：根据本发明的实施例的方法包括提供包括在生长衬底上生长的半导体结构的晶片，所述半导体结构包括夹在n型区域和p型区域之间的III族氮化物发光层。晶片结合到第二基板。除去生长底物。在将晶片接合到第二基板之后，将晶片加工成多个发光器件。

10. 发明申请

US20080308824A1 Thin Flash or Video Recording Light Using Low Profile Side Emitting LED 有权
标题翻译：薄型闪光灯或视频记录灯使用低档侧发光LED
公开(公告)号：US20080308824A1
公开(公告)日：2008-12-18
申请号：US11763311
申请日：2007-06-14
申请人： Oleg Borisovich Shchekin , John Epler , Gregory W. Eng , Serge Bierhuizen , Gerard Harbers
发明人： Oleg Borisovich Shchekin , John Epler , Gregory W. Eng , Serge Bierhuizen , Gerard Harbers
IPC分类号： H01L33/00
CPC分类号： G02B6/0073 , H01L33/405 , H01L33/46 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/13 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.
摘要翻译：描述了用于照相机的非常薄的闪光模块，其不会出现作为照明对象的点光源。因此，闪光灯对该主题的反感较少。在一个实施例中，发光表面积为约5mm×10mm。光学耦合到实心光导体的低轮廓侧面发光LED使得闪光灯模块能够比2mm更薄。闪光模块也可以连续通电用于视频记录。该模块对于手机相机和其他薄型相机特别有用。

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