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1. 发明授权

US07668668B2 Stress component measurement method 失效
标题翻译：应力分量测量方法
公开(公告)号：US07668668B2
公开(公告)日：2010-02-23
申请号：US11869224
申请日：2007-10-09
申请人： Nobuyuki Naka , Shinsuke Kashiwagi
发明人： Nobuyuki Naka , Shinsuke Kashiwagi
IPC分类号： G01L5/00
CPC分类号： G01L1/24 , G01L5/0047
摘要： A method of measuring a stress component in a short period of time in a nondestructive manner and a stress component measurement device that includes a stress component comparison section that compares a Raman spectrum L obtained in a predetermined area W1 of a reference specimen W to which a given stress component is applied with the stress component, a correlation data production section that produces correlation data indicating a correlation between the Raman spectrum L and the stress component by the use of a multivariate analysis method based on the comparison results conducted by the stress component comparison section. The comparison is conducted multiple times on different predetermined areas W1. A correlation data storage section stores the correlation data, and a stress component calculation section calculates a stress component applied to a measurement area W1′ of a measurement specimen W′ whose composition is the same as that of the reference specimen W based on the Raman spectrum L obtained from the measurement area W1′ and the correlation data.
摘要翻译：一种以非破坏性方式测量短时间内的应力分量的方法以及包括应力分量比较部分的应力分量测量装置，所述应力分量比较部分将参考样品W的预定区域W1中获得的拉曼光谱L进行比较，给予应力分量与应力分量一起应用的相关数据生成部分，通过使用基于应力分量比较进行的比较结果的多元分析方法产生表示拉曼光谱L和应力分量之间的相关性的相关数据部分。在不同的预定区域W1进行多次比较。相关数据存储部分存储相关数据，并且应力分量计算部分基于拉曼光谱计算施加到与基准样本W的组成相同的测量样本W'的测量区域W1'的应力分量 L和相关数据。

2. 发明授权

US07295307B2 Method of and apparatus for measuring stress of semiconductor material 失效
标题翻译：测量半导体材料应力的方法和装置
公开(公告)号：US07295307B2
公开(公告)日：2007-11-13
申请号：US11219550
申请日：2005-09-02
申请人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari
发明人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari
IPC分类号： G01J3/44
CPC分类号： G01N21/211 , G01J3/44 , G01N21/65 , G01N21/9501 , G01N2021/8477
摘要： The present invention provides a method of and a device for measuring the stress in a semiconductor material. An excitation light is irradiated on a semiconductor material formed with a silicon germanium layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer. An internal stress of the semiconductor material is measured from peak position information of the Raman spectrum of scattered light from the irradiating point, wherein light having a wavelength capable of reaching the single crystal silicon substrate is used as the excitation light, a temperature of the semiconductor material is estimated from a shift amount of the peak position of the Raman spectrum of the scattered light from the substrate in accordance with the irradiation of the excitation light and the shift amounts of the peak positions of the Raman spectra in the strained silicon layer and in the silicon germanium layer are corrected by means of the estimated temperature, The internal stresses of the strained silicon layer and the silicon germanium layer are calculated from the corrected peak position information of the Raman spectra in the respective layers.
摘要翻译：本发明提供一种用于测量半导体材料中的应力的方法和装置。激发光从应变硅层的方向在单晶硅衬底上以多层结构的硅锗层和应变硅层形成的半导体材料照射。从照射点的散射光的拉曼光谱的峰值位置信息测量半导体材料的内应力，其中使用具有到达单晶硅衬底的波长的光作为激发光，半导体的温度根据激发光的照射和应变硅层中的拉曼光谱的峰位移的偏移量，根据来自基板的散射光的拉曼光谱的峰值位置的偏移量估计材料，并且通过估计的温度校正硅锗层。根据各层中的拉曼光谱的校正峰值位置信息计算应变硅层和硅锗层的内应力。

3. 发明授权

US07623223B2 Stress measurement method 失效
标题翻译：应力测量方法
公开(公告)号：US07623223B2
公开(公告)日：2009-11-24
申请号：US11869207
申请日：2007-10-09
申请人： Nobuyuki Naka , Shinsuke Kashiwagi
发明人： Nobuyuki Naka , Shinsuke Kashiwagi
IPC分类号： G01B11/16 , G01L1/00
CPC分类号： G01N21/65 , G01L5/0047
摘要： An object of this invention is to provide stress measurement method that is stress of the measuring object nondestructively in a short period of time.In order to attain this object, the stress measurement apparatus 1 comprises a correlation data storage section 41 that analyzes a correlation between reference stress related data obtained from a Raman spectrum L of an entire predetermined area W1 of a reference specimen W and local stress originated data as being data obtained based on a local stress each of which applies to multiple positions WS1˜WSn respectively in the predetermined area W1 and stores correlation data indicating the correlation, a data obtaining section 42 that obtains measurement stress related data from a Raman spectrum L on an entire measurement area W1′, corresponding to the predetermined area W1, of a measurement specimen WS′, and a calculation section 43 that calculates local stress originated data in the measurement area W1′ based on the correlation data and the measurement stress related data.
摘要翻译：本发明的目的是提供在短时间内非破坏性地测量测量对象的应力测量方法。为了达到该目的，应力测量装置1包括相关数据存储部分41，该相关数据存储部分41分析从参考样本W的整个预定区域W1的拉曼光谱L获得的参考应力相关数据与局部应力产生数据之间的相关性作为基于局部应力获得的数据，分别适用于预定区域W1中的多个位置WS1〜WSn，并存储表示相关性的相关数据，从拉曼光谱L获得测量应力相关数据的数据获取部42 与测量样本WS'的预定区域W1相对应的整个测量区域W1'，以及基于相关数据和测量应力相关数据计算测量区域W1'中的局部应力发生数据的计算部件43。

4. 发明申请

US20080084552A1 STRESS MEASUREMENT METHOD 失效
标题翻译：应力测量方法
公开(公告)号：US20080084552A1
公开(公告)日：2008-04-10
申请号：US11869207
申请日：2007-10-09
申请人： Nobuyuki Naka , Sinsuke Kashiwagi
发明人： Nobuyuki Naka , Sinsuke Kashiwagi
IPC分类号： G01B11/16
CPC分类号： G01N21/65 , G01L5/0047
摘要： An object of this invention is to provide stress measurement method that is stress of the measuring object nondestructively in a short period of time.In order to attain this object, the stress measurement apparatus 1 comprises a correlation data storage section 41 that analyzes a correlation between reference stress related data obtained from a Raman spectrum L of an entire predetermined area W1 of a reference specimen W and local stress originated data as being data obtained based on a local stress each of which applies to multiple positions WS1˜WSn respectively in the predetermined area W1 and stores correlation data indicating the correlation, a data obtaining section 42 that obtains measurement stress related data from a Raman spectrum L on an entire measurement area W1′, corresponding to the predetermined area W1, of a measurement specimen WS′, and a calculation section 43 that calculates local stress originated data in the measurement area W1′ based on the correlation data and the measurement stress related data.
摘要翻译：本发明的目的是提供在短时间内非破坏性地测量测量对象的应力测量方法。为了实现该目的，应力测量装置1包括相关数据存储部分41，其分析从参考样本W的整个预定区域W 1的拉曼光谱L获得的参考应力相关数据与产生的局部应力之间的相关性数据作为基于局部应力获得的数据，每个应力分别适用于预定区域W 1中的多个位置WS 1〜N N，并且存储指示相关性的相关数据，数据获取部42，其从测量样本WS'的与规定区域W1相对应的整个测量区域W 1'上的拉曼光谱L获得测量应力相关数据，以及计算部位43，其计算局部应力基于相关数据和测量应力相关数据在测量区域W 1'中产生的数据。

5. 发明申请

US20080086276A1 STRESS COMPONENT MEASUREMENT METHOD 失效
标题翻译：应力分量测量方法
公开(公告)号：US20080086276A1
公开(公告)日：2008-04-10
申请号：US11869224
申请日：2007-10-09
申请人： Nobuyuki Naka , Shinsuke Kashiwagi
发明人： Nobuyuki Naka , Shinsuke Kashiwagi
IPC分类号： G06F19/00
CPC分类号： G01L1/24 , G01L5/0047
摘要： An object of this invention is to provide a method that can measure a stress component in a short period of time in a nondestructive manner.The stress component measurement device 1 comprises a stress component comparison section 413 that compares a Raman spectrum L obtained in a predetermined area W1 of a reference specimen W to which a given stress component is applied with the stress component, a correlation data production section 414 that produces correlation data indicating a correlation between the Raman spectrum L and the stress component by the use of a multivariate analysis method based on the comparison results conducted by the stress component comparison section 413 wherein comparison is conducted multiple times on different predetermined areas W1, a correlation data storage section 41 that stores the correlation data, and a stress component calculation section 43 that calculates a stress component applied to an area (hereinafter called as a measurement area) W1′ of a measurement specimen W′ whose composition is the same as that of the reference specimen W based on the Raman spectrum L obtained from the measurement area W1′ and the correlation data.
摘要翻译：本发明的目的是提供一种能够以非破坏性的方式在短时间内测量应力分量的方法。应力分量测量装置1包括应力分量比较部分413，其将在施加了给定应力分量的参考样本W的预定区域W 1中获得的拉曼光谱L与应力分量进行比较，相关数据产生部分414 通过使用基于由应力分量比较部413进行的比较结果的多元分析方法，生成表示拉曼光谱L与应力分量之间的相关性的相关数据，其中在不同的预定区域W 1，存储相关数据的相关数据存储部41和计算施加到组成相同的测定试样W'的区域（以下称为测定区域）W 1'的应力分量的应力分量计算部43 基于从我获得的拉曼光谱L的参考样本W 采购区域W 1'和相关数据。

6. 发明授权

US07327444B2 Substrate inspection apparatus and method 有权
标题翻译：基板检查装置及方法
公开(公告)号：US07327444B2
公开(公告)日：2008-02-05
申请号：US11196947
申请日：2005-08-04
申请人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari , Yoshiyuki Nakajima , Kimihiko Arimoto
发明人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari , Yoshiyuki Nakajima , Kimihiko Arimoto
IPC分类号： G01B11/06 , G01N21/21 , G01N21/65
CPC分类号： H01L22/20 , G01N21/65 , G01N21/9501 , H01L22/12
摘要： The present invention provides a method and substrate examining device that sequentially and automatically measures at least the thickness and the internal stress of the thin film at a predetermined measurement point on the surface of every manufactured semiconductor substrate to perform quality control on each substrate, and reliably recognizes the cause of defects to improve productivity. The examining device and method accurately analyzes the correlation between film thickness and stress to establish the manufacturing processes necessary for manufacturing a semiconductor substrate of higher performance, and measures the distribution of a physical quantity such as internal stress, index of refraction, and composition of the semiconductor substrate in the film thickness direction, without being influenced by change in ambient environmental temperature thereby further improving examination precision.
摘要翻译：本发明提供了一种方法和基板检查装置，其在每个制造的半导体基板的表面上的预定测量点处至少依次测量薄膜的厚度和内部应力，以对每个基板执行质量控制，并且可靠地认识到缺陷的原因，以提高生产力。检查装置和方法准确地分析膜厚和应力之间的相关性，以建立制造具有更高性能的半导体衬底所需的制造工艺，并且测量诸如内应力，折射率和物理量的物理量的分布半导体衬底在膜厚度方向上，而不受周围环境温度的变化的影响，从而进一步提高检查精度。

7. 发明申请

US20060038980A1 Substrate inspection apparatus and method 有权
标题翻译：基板检查装置及方法
公开(公告)号：US20060038980A1
公开(公告)日：2006-02-23
申请号：US11196947
申请日：2005-08-04
申请人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari , Yoshiyuki Nakajima , Kimihiko Arimoto
发明人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari , Yoshiyuki Nakajima , Kimihiko Arimoto
IPC分类号： G01N21/00
CPC分类号： H01L22/20 , G01N21/65 , G01N21/9501 , H01L22/12
摘要： The present invention provides a method and substrate examining device that sequentially and automatically measures at least the thickness and the internal stress of the thin film at a predetermined measurement point on the surface of every manufactured semiconductor substrate to perform quality control on each substrate, and reliably recognizes the cause of defects to improve productivity. The examining device and method accurately analyzes the correlation between film thickness and stress to establish the manufacturing processes necessary for manufacturing a semiconductor substrate of higher performance, and measures the distribution of a physical quantity such as internal stress, index of refraction, and composition of the semiconductor substrate in the film thickness direction, without being influenced by change in ambient environmental temperature thereby further improving examination precision.
摘要翻译：本发明提供了一种方法和基板检查装置，其在每个制造的半导体基板的表面上的预定测量点处至少依次测量薄膜的厚度和内部应力，以对每个基板执行质量控制，并且可靠地认识到缺陷的原因，以提高生产力。检查装置和方法准确地分析膜厚和应力之间的相关性，以建立制造具有更高性能的半导体衬底所需的制造工艺，并且测量诸如内应力，折射率和物理量的物理量的分布半导体衬底在膜厚度方向上，而不受周围环境温度的变化的影响，从而进一步提高检查精度。

8. 发明申请

US20060049480A1 Method of and apparatus for measuring stress of semiconductor material 失效
标题翻译：测量半导体材料应力的方法和装置
公开(公告)号：US20060049480A1
公开(公告)日：2006-03-09
申请号：US11219550
申请日：2005-09-02
申请人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari
发明人： Nobuyuki Naka , Akihiro Katanishi , Masaaki Magari
IPC分类号： H01L29/00
CPC分类号： G01N21/211 , G01J3/44 , G01N21/65 , G01N21/9501 , G01N2021/8477
摘要： The present invention provides a method of and a device for measuring the stress in a semiconductor material. An excitation light is irradiated on a semiconductor material formed with a silicon germanium layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer. An internal stress of the semiconductor material is measured from peak position information of the Raman spectrum of scattered light from the irradiating point, wherein light having a wavelength capable of reaching the single crystal silicon substrate is used as the excitation light, a temperature of the semiconductor material is estimated from a shift amount of the peak position of the Raman spectrum of the scattered light from the substrate in accordance with the irradiation of the excitation light and the shift amounts of the peak positions of the Raman spectra in the strained silicon layer and in the silicon germanium layer are corrected by means of the estimated temperature, The internal stresses of the strained silicon layer and the silicon germanium layer are calculated from the corrected peak position information of the Raman spectra in the respective layers.
摘要翻译：本发明提供一种用于测量半导体材料中的应力的方法和装置。激发光从应变硅层的方向在单晶硅衬底上以多层结构的硅锗层和应变硅层形成的半导体材料照射。从照射点的散射光的拉曼光谱的峰值位置信息测量半导体材料的内应力，其中使用具有到达单晶硅衬底的波长的光作为激发光，半导体的温度根据激发光的照射和应变硅层中的拉曼光谱的峰位移的偏移量，根据来自基板的散射光的拉曼光谱的峰值位置的偏移量估计材料，并且通过估计的温度校正硅锗层。根据各层中的拉曼光谱的校正峰值位置信息计算应变硅层和硅锗层的内应力。

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