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1. 发明授权

US08585821B2 SiC epitaxial substrate and method for producing the same 失效
标题翻译： SiC外延基板及其制造方法
公开(公告)号：US08585821B2
公开(公告)日：2013-11-19
申请号：US12452084
申请日：2008-03-11
申请人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
发明人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
IPC分类号： C30B25/02 , C30B25/18 , C30B29/36 , C30B13/00 , C30B29/06
CPC分类号： C30B25/02 , C30B13/00 , C30B25/18 , C30B25/20 , C30B29/06 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/02628 , H01L33/0054
摘要： In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.
摘要翻译：在本发明的一个实施例中，制造了包括单晶SiC衬底的单晶SiC外延衬底; 由在单晶SiC衬底上形成的第一SiC外延膜制成的缓冲层; 以及由形成在缓冲层上的第二SiC外延膜制成的有源层。通过将一组单晶SiC衬底，碳源板和具有预定厚度的金属Si熔融层热处理并插入在单晶SiC衬底和金属Si熔融层之间，从而外延生长缓冲层，在单晶SiC衬底上生长单晶SiC。通过气相生长法在缓冲层上外延生长单晶SiC生长活性层。这允许制造包括缺陷低的高质量单晶SiC活性层的单晶SiC外延衬底。

2. 发明授权

US06208420B1 Method and apparatus for estimating quality of grains 有权
标题翻译：估计谷物质量的方法和装置
公开(公告)号：US06208420B1
公开(公告)日：2001-03-27
申请号：US09501272
申请日：2000-02-09
申请人： Satoru Satake , Yukio Hosaka , Hideharu Maruyama , Nobuhiko Nakamura , Nobuharu Yagishita
发明人： Satoru Satake , Yukio Hosaka , Hideharu Maruyama , Nobuhiko Nakamura , Nobuharu Yagishita
IPC分类号： G01N2155
CPC分类号： G01N21/3563 , G01N21/84 , G01N33/02 , G01N2021/8466
摘要： A method and an apparatus are provided for estimating a quality of grains to be harvested from a grain plant in the future, during a growth period prior to the harvesting. The method comprises the step for establishing a quality conversion coefficient for estimating a specific quality of grains after the harvesting based on absorbencies relating to the specific quality of the grains obtained by irradiating light having predetermined wavelength regions on a leaf of a grain plant in growth at a predetermined time during the growth period of the grain plant and the specific quality obtained from the same grains after the harvesting, and the step for estimating the quality of the grains to be harvested in the future based on said quality conversion coefficient and absorbencies relating to said specific quality obtained from a leaf of the grain plant presently growing at the predetermined time. The measurement for estimating the quality of the grains can be carried out in an easy and simple manner during the growth of grain plants.
摘要翻译：提供了一种方法和装置，用于在收获前的生长期间估计将来从谷物植物收获的谷粒的质量。该方法包括用于建立质量转换系数的步骤，用于基于通过在具有预定波长区域的光照射在具有生长的谷物植物的叶上获得的颗粒的特定质量的吸光度来估计收获后的谷物的特定质量在谷物植物的生长期间的预定时间和从收获后的相同谷粒获得的特定质量，以及基于所述质量转换系数和与之相关的吸光度来估计未来收获的谷粒的质量的步骤所述特定质量从目前在预定时间生长的谷物植物叶获得。用于估计谷物质量的测量可以在粮食植物生长期间以简单和简单的方式进行。

3. 发明授权

US07969387B2 Method for driving plasma display device 失效
标题翻译：驱动等离子体显示装置的方法
公开(公告)号：US07969387B2
公开(公告)日：2011-06-28
申请号：US12446486
申请日：2008-04-14
申请人： Nobuhiko Nakamura
发明人： Nobuhiko Nakamura
IPC分类号： G09G3/28
CPC分类号： G09G3/296 , G09G3/2932 , G09G2310/0218
摘要： In the method for driving a plasma display device, the plasma display panel are applied with voltage through the following process. In the first address period where an address discharge is generated on the scan electrodes that belong to the first scan electrode group, the third switching element is turned OFF so as to give a different value of reference voltage between the first and the second scan electrode driving sections. In the second address period where an address discharge is generated on the scan electrodes that belong to the second scan electrode group, the third switching element is turned ON so as to give a same value of reference voltage between the first and the second scan electrode driving sections. In the sustain period where sustain pulses are applied to a plurality of scan electrodes to generate a sustain discharge in the discharge cells, the third switching element is turned ON.
摘要翻译：在等离子体显示装置的驱动方法中，等离子体显示面板通过以下工序施加电压。在属于第一扫描电极组的扫描电极上产生寻址放电的第一寻址周期中，第三开关元件断开，以便在第一和第二扫描电极驱动之间给出不同的基准电压值部分。在属于第二扫描电极组的扫描电极上产生寻址放电的第二寻址周期中，第三开关元件导通，以便在第一和第二扫描电极驱动之间给出相同的基准电压值部分。在维持脉冲施加到多个扫描电极以在放电单元中产生维持放电的维持期间，第三开关元件导通。

4. 发明申请

US20100315404A1 METHOD FOR DRIVING PLASMA DISPLAY DEVICE 失效
标题翻译：驱动等离子体显示装置的方法
公开(公告)号：US20100315404A1
公开(公告)日：2010-12-16
申请号：US12446486
申请日：2008-04-14
申请人： Nobuhiko Nakamura
发明人： Nobuhiko Nakamura
IPC分类号： G09G5/00 , G09G3/28
CPC分类号： G09G3/296 , G09G3/2932 , G09G2310/0218
摘要： In the method for driving a plasma display device, the plasma display panel are applied with voltage through the following process. In the first address period where an address discharge is generated on the scan electrodes that belong to the first scan electrode group, the third switching element is turned OFF so as to give a different value of reference voltage between the first and the second scan electrode driving sections. In the second address period where an address discharge is generated on the scan electrodes that belong to the second scan electrode group, the third switching element is turned ON so as to give a same value of reference voltage between the first and the second scan electrode driving sections. In the sustain period where sustain pulses are applied to a plurality of scan electrodes to generate a sustain discharge in the discharge cells, the third switching element is turned ON.
摘要翻译：在等离子体显示装置的驱动方法中，等离子体显示面板通过以下工序施加电压。在属于第一扫描电极组的扫描电极上产生寻址放电的第一寻址周期中，第三开关元件断开，以便在第一和第二扫描电极驱动之间给出不同的基准电压值部分。在属于第二扫描电极组的扫描电极上产生寻址放电的第二寻址周期中，第三开关元件导通，以便在第一和第二扫描电极驱动之间给出相同的基准电压值部分。在维持脉冲施加到多个扫描电极以在放电单元中产生维持放电的维持期间，第三开关元件导通。

5. 发明授权

US09351092B2 Audio processing device, audio processing method, and program 有权
标题翻译：音频处理装置，音频处理方法和程序
公开(公告)号：US09351092B2
公开(公告)日：2016-05-24
申请号：US13161604
申请日：2011-06-16
申请人： Tomoaki Muramatsu , Nobuhiko Nakamura , Yoshio Oguchi , Masanobu Sayama
发明人： Tomoaki Muramatsu , Nobuhiko Nakamura , Yoshio Oguchi , Masanobu Sayama
IPC分类号： H04R5/02 , H04R1/02 , H04S3/00 , H04N5/64 , H04N13/04
CPC分类号： H04S3/008 , H04N5/642 , H04N13/30 , H04N13/341 , H04R2499/15 , H04S2400/11
摘要： There is provided an audio processing device including an estimation unit configured to estimate a user's representative perceived position of a stereoscopic image from a difference between a left-eye image and a right-eye image of the stereoscopic image displayed on a display device, and an audio controller configured to control audio output of an audio output device in accordance with the representative perceived position estimated by the estimation unit.
摘要翻译：提供了一种音频处理装置，包括：估计单元，被配置为从显示装置上显示的立体图像的左眼图像和右眼图像之间的差异估计立体图像的用户的代表感知位置，以及音频控制器，其被配置为根据由所述估计单元估计的代表感知位置来控制音频输出设备的音频输出。

6. 发明授权

US08207913B2 Plasma display device and method for controlling an amplitude of a waveform used for driving a plasma display panel based on temperature 失效
标题翻译：基于温度控制用于驱动等离子体显示面板的波形幅度的等离子体显示装置和方法
公开(公告)号：US08207913B2
公开(公告)日：2012-06-26
申请号：US12301097
申请日：2008-04-23
申请人： Hiroshi Ibaraki , Minoru Takeda , Keiji Akamatsu , Kenji Ogawa , Nobuhiko Nakamura
发明人： Hiroshi Ibaraki , Minoru Takeda , Keiji Akamatsu , Kenji Ogawa , Nobuhiko Nakamura
IPC分类号： G09G3/28 , G09G5/00 , G06F3/038
CPC分类号： G09G3/2965 , G09G3/2927 , G09G2310/066 , G09G2320/0228 , G09G2320/0238 , G09G2320/041 , G09G2320/066
摘要： A plasma display panel; a scan electrode drive circuit for generating a gently decreasing downward inclined waveform voltage in an initializing period, a gently increasing first inclined waveform voltage, and a second inclined waveform voltage having a steeper gradient than the first inclined waveform voltage and decreasing immediately after the increasing waveform voltage reaches a predetermined potential in the last part of the sustain period. The lowest voltage in the downward inclined waveform voltage is switched at a first voltage, a second voltage higher than the first voltage and a third voltage higher than the second voltage to generate a downward inclined waveform voltage. The lowest voltage is switched according to the detected temperature to generate the downward inclined waveform voltage.
摘要翻译：等离子体显示面板; 扫描电极驱动电路，用于在初始化期间产生缓慢下降的向下倾斜波形电压，缓慢增加的第一倾斜波形电压和具有比第一倾斜波形电压更陡的梯度的第二倾斜波形电压，并且在增加的波形之后立即减小电压在维持周期的最后部分达到预定电位。向下倾斜波形电压中的最低电压以比第一电压高的第一电压和高于第二电压的第三电压被切换以产生向下倾斜的波形电压。根据检测到的温度切换最低电压以产生向下倾斜的波形电压。

7. 发明申请

US20120042822A1 METHOD FOR FABRICATING SiC SUBSTRATE 审中-公开
标题翻译： SiC基板的制备方法
公开(公告)号：US20120042822A1
公开(公告)日：2012-02-23
申请号：US13266278
申请日：2009-04-30
申请人： Shinkichi Hamada , Nobuhiko Nakamura , Toru Matsunami
发明人： Shinkichi Hamada , Nobuhiko Nakamura , Toru Matsunami
IPC分类号： C30B19/04
CPC分类号： C30B29/36 , C30B19/04
摘要： A method for fabricating a SiC substrate using metastable solvent epitaxy comprises a Si evaporation step of evaporating a Si melt at an intermediate temperature between a SiC crystal growth temperature and a Si melting point after a crystal growth step of growing an SiC crystal with a predetermined film thickness on the surface of the SiC substrate at the SiC crystal growth temperature. In the method for fabricating the SiC substrate, the ambient pressure in the crystal growth step is higher than the saturated vapor pressure of the Si melt, and the ambient pressure in the Si evaporation step is lower than the saturated vapor pressure of the Si melt. Single-crystal SiC with no large irregularities on the surface thereof can be obtained by using the method.
摘要翻译：使用亚稳溶剂外延制造SiC衬底的方法包括在具有预定膜生长SiC晶体的晶体生长步骤之后，在SiC晶体生长温度和Si熔点之间的中间温度下蒸发Si熔体的Si蒸发步骤在SiC晶体生长温度下在SiC衬底的表面上的厚度。在制造SiC衬底的方法中，晶体生长步骤中的环境压力高于Si熔体的饱和蒸气压，并且Si蒸发步骤中的环境压力低于Si熔体的饱和蒸气压。通过使用该方法可以获得其表面上没有大的凹凸的单晶SiC。

8. 发明申请

US20100119849A1 SIC EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME 失效
标题翻译： SIC外延基板及其制造方法
公开(公告)号：US20100119849A1
公开(公告)日：2010-05-13
申请号：US12452084
申请日：2008-03-11
申请人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
发明人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
IPC分类号： B32B9/04 , C30B23/02
CPC分类号： C30B25/02 , C30B13/00 , C30B25/18 , C30B25/20 , C30B29/06 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/02628 , H01L33/0054
摘要： In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.
摘要翻译：在本发明的一个实施例中，制造了包括单晶SiC衬底的单晶SiC外延衬底; 由在单晶SiC衬底上形成的第一SiC外延膜制成的缓冲层; 以及由形成在缓冲层上的第二SiC外延膜制成的有源层。通过将一组单晶SiC衬底，碳源板和具有预定厚度的金属Si熔融层热处理并插入在单晶SiC衬底和金属Si熔融层之间，从而外延生长缓冲层，在单晶SiC衬底上生长单晶SiC。通过气相生长法在缓冲层上外延生长单晶SiC生长活性层。这允许制造包括缺陷低的高质量单晶SiC活性层的单晶SiC外延衬底。

9. 发明申请

US20100039415A1 PLASMA DISPLAY DEVICE AND METHOD FOR DRIVING PLASMA DISPLAY PANEL 失效
标题翻译：等离子体显示装置和驱动等离子体显示面板的方法
公开(公告)号：US20100039415A1
公开(公告)日：2010-02-18
申请号：US12301097
申请日：2008-04-23
申请人： Hiroshi Ibaraki , Minoru Takeda , Keiji Akamatsu , Kenji Ogawa , Nobuhiko Nakamura
发明人： Hiroshi Ibaraki , Minoru Takeda , Keiji Akamatsu , Kenji Ogawa , Nobuhiko Nakamura
IPC分类号： G09G3/28 , G06F3/038
CPC分类号： G09G3/2965 , G09G3/2927 , G09G2310/066 , G09G2320/0228 , G09G2320/0238 , G09G2320/041 , G09G2320/066
摘要： A plasma display panel; a scan electrode drive circuit for generating a gently decreasing downward inclined waveform voltage in an initializing period, a gently increasing first inclined waveform voltage in an initializing period of at least one subfield in one field period, and a second inclined waveform voltage having a steeper gradient than the first inclined waveform voltage and decreasing immediately after the increasing waveform voltage reaches a predetermined potential in the last part of the sustain period; and a panel temperature detecting circuit are provided. The lowest voltage in the downward inclined waveform voltage is switched at a first voltage, a second voltage higher than the first voltage and a third voltage higher than the second voltage to generate a downward inclined waveform voltage. The lowest voltage is switched according to the temperature detected by the panel temperature detecting circuit to generate the downward inclined waveform voltage.
摘要翻译：等离子体显示面板; 扫描电极驱动电路，用于在初始化期间产生缓慢下降的向下倾斜波形电压，在一个场周期中的至少一个子场的初始化周期内缓慢增加的第一倾斜波形电压和具有更陡梯度的第二倾斜波形电压比第一倾斜波形电压低，并且在维持周期的最后部分中，在波形电压上升到紧靠预定电位之后减小; 并提供面板温度检测电路。向下倾斜波形电压中的最低电压以比第一电压高的第一电压和高于第二电压的第三电压被切换以产生向下倾斜的波形电压。根据由面板温度检测电路检测到的温度来切换最低电压以产生向下倾斜的波形电压。

10. 发明授权

US06683970B1 Method of diagnosing nutritious condition of crop in plant field 有权
标题翻译：诊断农作物营养状况的方法
公开(公告)号：US06683970B1
公开(公告)日：2004-01-27
申请号：US09635271
申请日：2000-08-09
申请人： Satoru Satake , Yukio Hosaka , Hideharu Maruyama , Nobuhiko Nakamura
发明人： Satoru Satake , Yukio Hosaka , Hideharu Maruyama , Nobuhiko Nakamura
IPC分类号： G06U900
CPC分类号： G01N21/31 , A01G7/00 , G01N2021/8466
摘要： A method of diagnosing nutritious condition of crop in a plant field is disclosed. The method comprises the steps of: locating a camera equipped with a plurality of image elements in a predetermined central depression angle with respect to the plant field; obtaining an amount of reflection light of a crop leaf for each image element by image-taking the field; obtaining an image-taken area for each unit image element by an area function constituted by a conversion variable including a ground clearance, an image element depression angle, the number of image elements and a field angle of the camera; making an area compensation of the amount of reflection light for each image element by the image-taken area; making a depression angle compensation of the amount of reflection light by a depression angle coefficient predetermined for compensating differences of amounts of reflection light correspondingly with image element depression angles; measuring an amount of light incident on the crop leaf; obtaining reflectance from the amount of the reflection light compensated and the measured amount of incident light; obtaining first crop information in a predetermined area based on the reflectance and a first crop related formula predetermined for obtaining crop information from reflectance, and storing the first crop information; and determining a nutritious condition of the crop in the plant field based on the first crop information. Instead of the grand clearance of the camera, a distance of field of view of the camera may well be used.
摘要翻译：公开了一种诊断植物营养状况的方法。该方法包括以下步骤：将装备有相对于植物场的预定中心凹陷角的多个图像元素的相机定位; 通过图像拍摄获得每个图像元素的作物叶的反射光量; 通过由包括离地间隙，图像元素俯仰角，图像元素的数量和相机的视场角的转换变量构成的区域函数来获得每个单位图像元素的图像拍摄区域; 通过图像拍摄区域对每个图像元素的反射光量进行面积补偿; 通过预定的用于补偿反射光量的差异的按压角系数对应于图像元素下压角来对反射光的倾斜角补偿; 测量入射在作物叶上的光量; 从补偿的反射光的量和入射光的测量量获得反射率; 基于所述反射率和预定的用于从反射率获得作物信息的第一作物相关公式获得预定区域中的第一作物信息，以及存储所述第一作物信息; 以及基于所述第一作物信息确定所述作物在所述植物区域中的营养状况。而不是相机的大清除，可以使用相机的视野的距离。

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