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    • 2. 发明申请
    • Plasma processing apparatus
    • 等离子体处理装置
    • US20100212834A1
    • 2010-08-26
    • US12379636
    • 2009-02-26
    • Ryouta KitaniNobuhide NunomuraYasukiyo MoriokaMotohiko Yoshigai
    • Ryouta KitaniNobuhide NunomuraYasukiyo MoriokaMotohiko Yoshigai
    • H01L21/306
    • H01J37/32834
    • A plasma processing apparatus for processing a subject placed on a subject stage disposed in a processing chamber in a vacuum vessel, by using plasma formed in said processing chamber, includes: an exhaust space communicating with the processing chamber, extending in a horizontal direction, and exhausting gas in the processing chamber; an exhaust port communicating with the exhaust space, the gas being exhausted via the exhaust port; a pump disposed communicating with the exhaust port and exhausting the gas; and a plate member disposed in the exhaust space between a connection portion to the processing chamber and the exhaust port, extending along a direction connecting the connection portion and the exhaust port, and disposed outside a view angle from an upper surface of the subject stage.
    • 一种等离子体处理装置,用于通过使用在所述处理室中形成的等离子体处理设置在真空容器中的处理室中的被摄体台上的被摄体,包括:与处理室连通的排列空间,沿水平方向延伸;以及 在处理室中排出气体; 与所述排气空间连通的排气口,所述气体经由所述排气口排出; 与排气口连通并排出气体的泵; 以及板构件,其设置在与所述处理室的连接部与所述排气口之间的所述排气空间中,所述板构件沿着连接所述连接部和所述排气口的方向延伸并且配置在与所述主体台的上表面的视角以外。