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    • 4. 发明申请
    • PRINTED CIRCUIT BOARD
    • 印刷电路板
    • US20120051001A1
    • 2012-03-01
    • US12916615
    • 2010-10-31
    • NING WUHSIN-KUAN WUHOU-YUAN CHOUSHUN-BO BAIYAN-MEI ZHU
    • NING WUHSIN-KUAN WUHOU-YUAN CHOUSHUN-BO BAIYAN-MEI ZHU
    • H05K1/00
    • H05K1/0225H05K1/0243
    • A PCB includes a number of insulation layers, a number of circuit layers, a signal-interfering component, and a signal-sensitive component. The circuit layers and the insulation layers are stacked alternately. The circuit layers include at least two first circuit layers, a second circuit layer, and a ground layer. The ground layer has a first side and a second side facing away the first side. The first circuit layers are positioned near the first side and include an outmost first circuit layer and at least one inner first circuit layer positioned between the outmost first circuit layer and the ground layer. The second circuit layer is positioned near the second side. The signal-interfering component is positioned on the outmost first circuit layer. The signal-sensitive component is positioned on the second circuit layer. Each inner first circuit layer defines a copper-remove area corresponding to an orthogonal projection of the signal-interfering component thereon.
    • PCB包括多个绝缘层,多个电路层,信号干扰部件和信号敏感部件。 电路层和绝缘层交替堆叠。 电路层包括至少两个第一电路层,第二电路层和接地层。 接地层具有朝向第一侧的第一侧和第二侧。 第一电路层位于第一侧附近,并且包括位于最外层的第一电路层和接地层之间的最外层的第一电路层和至少一个内部第一电路层。 第二电路层位于第二侧附近。 信号干扰部件位于最外侧的第一电路层。 信号敏感部件位于第二电路层上。 每个内部第一电路层限定对应于其上的信号干扰部件的正交投影的铜去除区域。
    • 10. 发明授权
    • Method of fabricating semiconductor devices and method of removing a spacer
    • 制造半导体器件的方法和去除间隔物的方法
    • US07338910B2
    • 2008-03-04
    • US11162952
    • 2005-09-29
    • Chung-Ju LeeChih-Ning WuWei-Tsun Shiau
    • Chung-Ju LeeChih-Ning WuWei-Tsun Shiau
    • H01L21/302H01L21/461
    • H01L21/76834H01L21/28518H01L21/31111
    • A method of fabricating a semiconductor device is disclosed. The method includes defining an electrode on a semiconductor substrate; forming a spacer on at least one sidewall of the electrode; performing a process operation on the semiconductor substrate using the spacer as a mask and forming a material layer on the top or the surface of the semiconductor substrate and the electrode; and removing the spacer by steps of performing a wet etching process at a temperature in a range of 100° C. to 150° C. to etch the spacer using an acid solution containing phosphoric acid as an etchant. With respect to another aspect, a method of removing a spacer is also disclosed. The method includes performing a wet etching process at a temperature in a range of 100° C. to 150° C. to etch the spacer using an acid solution containing phosphoric acid as an etchant.
    • 公开了制造半导体器件的方法。 该方法包括在半导体衬底上限定电极; 在所述电极的至少一个侧壁上形成间隔物; 在所述半导体衬底上使用所述间隔件作为掩模进行处理操作,并在所述半导体衬底和所述电极的顶部或表面上形成材料层; 并且通过在100℃至150℃的温度范围内进行湿蚀刻工艺的步骤去除间隔物,以使用含有磷酸作为蚀刻剂的酸溶液蚀刻间隔物。 关于另一方面,还公开了一种去除间隔物的方法。 该方法包括在100℃至150℃范围内的温度下进行湿蚀刻工艺,以使用含有磷酸作为蚀刻剂的酸溶液蚀刻间隔物。