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US06420272B1 Method for removal of hard mask used to define noble metal electrode 失效
标题翻译：去除用于定义贵金属电极的硬掩模的方法
公开(公告)号：US06420272B1
公开(公告)日：2002-07-16
申请号：US09460700
申请日：1999-12-14
申请人： Hua Shen , David Edward Kotecki , Satish D. Athavale , Jenny Lian , Gerhard Kunkel , Nimal Chaudhary
发明人： Hua Shen , David Edward Kotecki , Satish D. Athavale , Jenny Lian , Gerhard Kunkel , Nimal Chaudhary
IPC分类号： H01L2100
CPC分类号： H01L28/60 , H01L21/02071 , H01L21/31116 , H01L21/32139 , H01L28/55
摘要： In semiconductor dynamic random access memory circuits using stacked capacitor storage elements formed using high permittivity dielectric material, it is typical to form the stacked capacitors using noble metal electrodes. Typically, the etching process for the noble metal electrodes requires the use of a hard mask patterning material such as silicon oxide. Removal of this hard mask frequently results in damage to the dielectric surface surrounding the patterned noble metal electrode. A method of removing the hard mask material without damaging the surrounding surface includes the steps of: depositing a soft mask photoresist material over the composite surface, including the hard masked covered noble metal electrode and the dielectric surface, in a manner such that the soft mask material is thinner over the region of the noble metal electrode; removing the portion of the soft mask material over the noble metal electrode leaving the soft mask material over the dielectric surface; etching the hard mask material with the soft mask material protecting the dielectric surface; and removing the remaining portion of the soft mask material.
摘要翻译：在使用高介电常数电介质材料形成的叠层电容器存储元件的半导体动态随机存取存储器电路中，典型的是使用贵金属电极形成叠层电容器。通常，贵金属电极的蚀刻工艺需要使用诸如氧化硅的硬掩模图形材料。去除这种硬掩模常常导致图案化的贵金属电极周围的电介质表面的损坏。在不损坏周围表面的情况下去除硬掩模材料的方法包括以下步骤：在复合表面上沉积软掩模光致抗蚀剂材料，包括硬掩蔽的贵金属电极和电介质表面，使得软掩模材料在贵金属电极的区域上较薄; 在所述贵金属电极上除去所述软掩模材料的所述部分，从而将所述软掩模材料留在所述电介质表面上; 用保护电介质表面的软掩模材料蚀刻硬掩模材料; 以及去除所述软掩模材料的剩余部分。

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