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1. 发明授权

US08754491B2 Spin torque MRAM using bidirectional magnonic writing 失效
标题翻译：使用双向磁力写入的自旋扭矩MRAM
公开(公告)号：US08754491B2
公开(公告)日：2014-06-17
申请号：US13100043
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder
发明人： David W. Abraham , Niladri N. Mojumder
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/12
摘要： An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.
摘要翻译：提供了用于双向写入的装置。堆叠包括隧道势垒上的参考层，自由层上的隧道势垒，以及金属间隔物上的自由层。该装置包括绝缘磁体。帕耳贴材料与绝缘磁体和叠层热耦合。当珀尔帖/绝缘磁体接口被冷却时，绝缘磁体构造成传递自旋扭矩以沿着第一方向旋转自由层的磁化。当珀尔帖/绝缘磁体界面被加热时，绝缘磁体被配置成传递自旋扭矩以使第二方向上的自由层的磁化旋转。

2. 发明申请

US20130341723A1 MEMORY CELL WITH ASYMMETRIC READ PORT TRANSISTORS 审中-公开
标题翻译：具有非对称读端口晶体管的存储单元
公开(公告)号：US20130341723A1
公开(公告)日：2013-12-26
申请号：US13531969
申请日：2012-06-25
申请人： Niladri N. Mojumder , Randy W. Mann , Anurag Mittal
发明人： Niladri N. Mojumder , Randy W. Mann , Anurag Mittal
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L21/84 , H01L27/1108 , H01L27/1203
摘要： A memory cell includes a storage element and a read port. The read port includes a first transistor having a first gate coupled to the storage element, a first source region, and a first drain region. The second transistor includes a second gate, a second source region coupled to the first drain region, and a second drain region. A first dopant profile of the first and second source regions is asymmetric with respect to a second dopant profile of the first and second drain regions.
摘要翻译：存储单元包括存储元件和读取端口。读端口包括第一晶体管，其具有耦合到存储元件的第一栅极，第一源极区域和第一漏极区域。第二晶体管包括第二栅极，耦合到第一漏极区域的第二源极区域和第二漏极区域。第一和第二源极区域的第一掺杂物分布相对于第一和第二漏极区域的第二掺杂物分布是不对称的。

3. 发明申请

US20120281467A1 MAGNONIC MAGNETIC RANDOM ACCESS MEMORY DEVICE 有权
公开(公告)号：US20120281467A1
公开(公告)日：2012-11-08
申请号：US13100032
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
发明人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译：提供了双向写入的机制。结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。当磁化不稳定时，施加电压以改变自由层的磁化。电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。

4. 发明申请

US20090190426A1 CIRCUITS, METHODS AND DESIGN STRUCTURES FOR ADAPTIVE REPAIR OF SRAM ARRAYS 审中-公开
标题翻译： SRAM阵列自适应修复的电路，方法和设计结构
公开(公告)号：US20090190426A1
公开(公告)日：2009-07-30
申请号：US12019132
申请日：2008-01-24
申请人： Ching-Te K. Chuang , Jae-Joon Kim , Niladri N. Mojumder , Saibal Mukhopadhyay
发明人： Ching-Te K. Chuang , Jae-Joon Kim , Niladri N. Mojumder , Saibal Mukhopadhyay
IPC分类号： G11C29/44
CPC分类号： G11C29/50 , G11C11/41 , G11C29/028 , G11C29/12005 , G11C2029/5004 , G11C2029/5006
摘要： The circuit includes a static random access memory array having a plurality of cells, in turn having a plurality of devices; as well as a global sensor having at least one output, coupled to the static random access memory array, and configured to sense at least one of global readability and global write-ability. Also included is a decision-making circuit coupled to the at least one output of the global sensor. The decision-making circuit is configured to determine, from the at least one output of the global sensor, whether adaptation signals are required to correct global readability and/or write-ability. An adaptation signal generation block is also included and is coupled to the decision-making circuit and the array, and configured to supply the adaptation signals to the array, responsive to the decision-making circuit determining that the adaptation signals are required. At least the array and the global sensor, and preferably the decision-making circuit and the adaptation signal generation block as well, are implemented on a single integrated circuit chip. An associated method and design structure(s) are also provided.
摘要翻译：电路包括具有多个单元的静态随机存取存储器阵列，又具有多个器件; 以及具有耦合到静态随机存取存储器阵列并被配置为感测全局可读性和全局写入能力中的至少一个的至少一个输出的全局传感器。还包括耦合到全球传感器的至少一个输出的决策电路。决策电路被配置为从全局传感器的至少一个输出确定是否需要自适应信号来校正全局可读性和/或写入能力。还包括适配信号生成块，并且耦合到决策电路和阵列，并且被配置为响应于决策电路确定需要自适应信号而将适配信号提供给阵列。至少阵列和全局传感器，以及优选地，决策电路和自适应信号生成块也被实现在单个集成电路芯片上。还提供了相关联的方法和设计结构。

5. 发明授权

US08456895B2 Magnonic magnetic random access memory device 有权
标题翻译：磁性磁性随机存取存储器件
公开(公告)号：US08456895B2
公开(公告)日：2013-06-04
申请号：US13100032
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
发明人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译：提供了双向写入的机制。结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。当磁化不稳定时，施加电压以改变自由层的磁化。电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。

6. 发明申请

US20120280338A1 SPIN TORQUE MRAM USING BIDIRECTIONAL MAGNONIC WRITING 失效
标题翻译：旋转扭矩MRAM使用双向磁性书写
公开(公告)号：US20120280338A1
公开(公告)日：2012-11-08
申请号：US13100043
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder
发明人： David W. Abraham , Niladri N. Mojumder
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/12
摘要： An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.
摘要翻译：提供了用于双向写入的装置。堆叠包括隧道势垒上的参考层，自由层上的隧道势垒，以及金属间隔物上的自由层。该装置包括绝缘磁体。帕耳贴材料与绝缘磁体和叠层热耦合。当珀尔帖/绝缘磁体接口被冷却时，绝缘磁体构造成传递自旋扭矩以沿着第一方向旋转自由层的磁化。当珀尔帖/绝缘磁体界面被加热时，绝缘磁体被配置成传递自旋扭矩以使第二方向上的自由层的磁化旋转。

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