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    • 5. 发明申请
    • Active matrix display devices and the manufacture thereof
    • 有源矩阵显示装置及其制造
    • US20060054896A1
    • 2006-03-16
    • US10515163
    • 2003-05-15
    • Pieter Van Der ZaagSoo YoonNigel Young
    • Pieter Van Der ZaagSoo YoonNigel Young
    • H01L33/00H01L31/113H01L21/00
    • H01L29/6675G02F1/13454H01L21/02532H01L21/02672H01L21/02686H01L29/78672
    • An active plate (2) for an active matrix display device (16), the active plate (2) comprising a substrate (4), a pixel area (6) and an adjacent drive circuit area (8). Both areas include polycrystalline silicon material formed by a process in which a metal is used to enhance the crystallisation process (MIC poly-Si), but only the MIC poly-Si in the drive circuit area (8) is subjected to an irradiation process using an energy beam (10). TFTs are fabricated with MIC poly-Si which have leakage currents in the off state sufficiently low for them to be acceptable for use as switching elements in the pixel area of matrix display devices. As only the drive circuit area (8) need be irradiated to provide poly-Si having the desired mobility, the time taken by the irradiation process can be significantly reduced.
    • 一种用于有源矩阵显示装置(16)的有源板(2),所述有源板(2)包括衬底(4),像素区域(6)和相邻的驱动电路区域(8)。 两个区域包括通过使用金属来增强结晶过程(MIC多晶硅)的方法形成的多晶硅材料,但仅驱动电路区域(8)中的MIC多晶硅经受使用 能量束(10)。 TFT是用MIC多晶硅制造的,其泄漏电流处于断开状态足够低,使得它们可以被用作矩阵显示装置的像素区域中的开关元件。 由于仅需要照射驱动电路区域(8)以提供具有所需移动性的多晶硅,所以可以显着地减少照射过程所花费的时间。
    • 7. 发明申请
    • Electrochromic display panel with electrodes for adjusting crosstalk
    • 带电极的电致变色显示面板,用于调节串扰
    • US20050253800A1
    • 2005-11-17
    • US10518275
    • 2003-06-12
    • Mark JohnsonNigel Young
    • Mark JohnsonNigel Young
    • G02F1/15G02F1/155G09G3/38
    • G02F1/155G02F1/1523
    • The display panel (1) has multiple picture elements (2), each picture element (2) having respective neighboring picture elements (2′). The picture elements (2) have a first electrode (3) and a second electrode (4) for the application of a potential difference between the first and the second electrode (3,4), and electrochromic material (5), which is present between the first and the second electrode (3,4). Electrical charge contained by the electrochromic material (5), induced by the potential difference, determines the color of the picture element (2). Color changes are provided by varying the electrical charge. Crosstalk, being coloration of neighboring picture elements (2′) when a picture element (2) is addressed, is adjustable by third electrodes (6) which adjust electrical currents between the picture element (2) addressed and their respective neighboring picture elements (2′).
    • 显示面板(1)具有多个图像元素(2),每个图像元素(2)具有相应的相邻图像元素(2')。 像素(2)具有用于施加第一和第二电极(3,4)之间的电位差的第一电极(3)和第二电极(4)以及存在的电致变色材料(5) 在第一和第二电极(3,4)之间。 由电位差引起的电致变色材料(5)所含的电荷决定了像素(2)的颜色。 通过改变电荷来提供颜色变化。 当图像元素(2)被寻址时,相邻图像元素(2')的着色可由第三电极(6)调节,第三电极(6)调整寻址的图像元素(2)和它们各自的相邻图像元素(2)之间的电流 ')。
    • 8. 发明申请
    • Tft electronic devices and their manufacture
    • Tft电子设备及其制造
    • US20060049428A1
    • 2006-03-09
    • US10520229
    • 2002-06-25
    • Pieter Van Der ZaagNigel YoungIan FrenchJeffrey Chapman
    • Pieter Van Der ZaagNigel YoungIan FrenchJeffrey Chapman
    • H01L29/76H01L29/745
    • H01L29/66765H01L29/78609H01L29/78678
    • An electronic device (70) comprises a thin film transistor (TFT) (9,59), the TFT including a channel (16) defined in a layer of polycrystalline semiconductor material (10,48). The polycrystalline semiconductor material is produced by crystallising amorphous semiconductor material (2) using metal atoms (6) to promote the crystallisation process. The polycrystalline semiconductor material (10) includes an average concentration of metal atoms in the range 1.3×1018 to 7.5×1018 atoms/cm3. This enables polycrystalline semiconductor TFTs to be formed with leakage properties acceptable for use in active matrix displays using a metal induced crystallisation process of duration significantly less that previously thought necessary. Furthermore, this process duration reduction facilitates the reliable fabrication of poly-Si TFTs having bottom gates formed of metal.
    • 电子器件(70)包括薄膜晶体管(TFT)(9,59),TFT包括限定在多晶半导体材料层(10,48)中的沟道(16)。 通过使用金属原子(6)使非晶半导体材料(2)结晶以促进结晶过程来生产多晶半导体材料。 多晶半导体材料(10)包括在1.3×10 18至7.5×10 18原子/ cm 3之间的金属原子的平均浓度。 这使得多晶半导体TFT可以形成为可用于有源矩阵显示器中的泄漏特性,其使用的金属诱导结晶过程的持续时间明显少于以前认为必要的时间。 此外,该工艺持续时间缩短有助于可靠地制造具有由金属形成的底部栅极的多晶硅TFT。
    • 10. 发明申请
    • Colour electroluminescent display devices
    • 彩色电致发光显示装置
    • US20060273998A1
    • 2006-12-07
    • US10559359
    • 2004-06-04
    • Nigel Young
    • Nigel Young
    • G09G3/30
    • G09G3/3233G09G3/3208G09G5/02G09G2300/0809G09G2300/0819G09G2300/0842G09G2300/088G09G2320/029G09G2320/043G09G2320/045G09G2360/148H01L27/3211H01L27/3269H01L31/105
    • A colour active matrix electroluminescent (EL) display device has an array of pixels (10) comprising sets of red, green and blue emitting pixels, each of which pixels comprises an EL display element (20), a drive transistor (22) for driving a current through the display element, a storage capacitor (24) for storing a voltage used for addressing the drive transistor, and a discharge photosensitive element (40, 42) for discharging the storage capacitor in dependence on the light output of the display element. The discharge photosensitive elements (42) in the set of blue pixels comprise lateral photosensitive thin film devices, such as lateral thin film transistors or gated or ungated lateral photodiode devices, while the discharge photosensitive elements (40) in the set of red pixels, and preferably the set of green pixels as well, comprise vertical p i n photodiodes (40). The selection of the photosensitive elements in this manner leads to enhanced colour-related photo-sensitivity, and thus improved display device performance.
    • 彩色有源矩阵电致发光(EL)显示装置具有包括红色,绿色和蓝色发射像素组的像素阵列(10),每个像素包括EL显示元件(20),驱动晶体管(22),用于驱动 通过显示元件的电流,用于存储用于寻址驱动晶体管的电压的存储电容器(24)和用于根据显示元件的光输出对存储电容器进行放电的放电感光元件(40,42)。 蓝色像素组中的放电感光元件(42)包括横向光敏薄膜器件,例如横向薄膜晶体管或门控或非门侧视光电二极管器件,而红色像素组中的放电感光元件(40)和 优选地,该组绿色像素也包括垂直pin光电二极管(40)。 以这种方式选择感光元件导致颜色相关的光敏性增强,从而改善了显示装置的性能。