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1. 发明申请

US20110064102A1 Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates 有权
公开(公告)号：US20110064102A1
公开(公告)日：2011-03-17
申请号：US12884993
申请日：2010-09-17
申请人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
发明人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
IPC分类号： H01S5/323 , H01S5/22 , H01S5/34 , H01L21/302
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
摘要： An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.

2. 发明授权

US08351478B2 Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates 有权
标题翻译：在{30-31}或切割含镓和氮的底物上形成激光二极管的生长结构和方法
公开(公告)号：US08351478B2
公开(公告)日：2013-01-08
申请号：US12884993
申请日：2010-09-17
申请人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
发明人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
摘要： An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
摘要翻译：一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。

3. 发明授权

US08728842B2 Self-aligned multi-dielectric-layer lift off process for laser diode stripes 有权
标题翻译：用于激光二极管条纹的自对准多介质层剥离工艺
公开(公告)号：US08728842B2
公开(公告)日：2014-05-20
申请号：US13425354
申请日：2012-03-20
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译：一种形成激光二极管结构的方法。该方法包括提供具有表面区域的激光二极管材料。包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。该方法使用多层介电掩模结构作为掩模形成激光二极管结构。该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。钝化层覆盖多层电介质掩模结构，并且底切区保持完整。选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。形成至少覆盖暴露的顶表面区域的接触结构。

4. 发明申请

US20120178198A1 Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes 有权
标题翻译：用于激光二极管条纹的自对准多电介质层剥离工艺
公开(公告)号：US20120178198A1
公开(公告)日：2012-07-12
申请号：US13425354
申请日：2012-03-20
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译：一种形成激光二极管结构的方法。该方法包括提供具有表面区域的激光二极管材料。包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。该方法使用多层介电掩模结构作为掩模形成激光二极管结构。该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。钝化层覆盖多层电介质掩模结构，并且底切区保持完整。选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。形成至少覆盖暴露的顶表面区域的接触结构。

5. 发明授权

US08143148B1 Self-aligned multi-dielectric-layer lift off process for laser diode stripes 有权
标题翻译：用于激光二极管条纹的自对准多介质层剥离工艺
公开(公告)号：US08143148B1
公开(公告)日：2012-03-27
申请号：US12502382
申请日：2009-07-14
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L21/30 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译：一种形成激光二极管结构的方法。该方法包括提供具有表面区域的激光二极管材料。包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。该方法使用多层电介质掩模结构作为掩模形成激光二极管结构。该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。钝化层覆盖多层电介质掩模结构，并且底切区保持完整。选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。形成至少覆盖暴露的顶表面区域的接触结构。

6. 发明申请

US20110064100A1 Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates 有权
标题翻译：用于形成激光二极管的切割含镓和含氮基底的生长结构和方法
公开(公告)号：US20110064100A1
公开(公告)日：2011-03-17
申请号：US12883093
申请日：2010-09-15
申请人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
发明人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
IPC分类号： H01S5/10 , H01S5/323 , H01S5/343 , H01L21/30 , B82Y20/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
摘要： An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
摘要翻译：一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。

7. 发明授权

US08750342B1 Laser diodes with scribe structures 有权
标题翻译：具有划痕结构的激光二极管
公开(公告)号：US08750342B1
公开(公告)日：2014-06-10
申请号：US13363935
申请日：2012-02-01
申请人： James W. Raring , Nick Pfister , Yu-Chia Chang , Matt Schmidt , Drew Felker
发明人： James W. Raring , Nick Pfister , Yu-Chia Chang , Matt Schmidt , Drew Felker
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/0206 , H01L21/02016 , H01L21/268 , H01L21/302 , H01L21/428 , H01L33/005 , H01L33/0062 , H01L33/0095 , H01L33/20 , H01S5/0202 , H01S5/0207 , H01S5/1039 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/34333 , H01S2301/14
摘要： A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
摘要翻译：描述了使用半极性或非极性含镓衬底发射电磁辐射的方法和装置，其中衬底的背面包括减少杂散光泄漏的多个划线。

8. 发明授权

US08355418B2 Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates 有权
标题翻译：生长结构和在{20-21}或切断含镓和氮的底物上形成激光二极管的方法
公开(公告)号：US08355418B2
公开(公告)日：2013-01-15
申请号：US12883093
申请日：2010-09-15
申请人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
发明人： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
摘要： An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
摘要翻译：一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。

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