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1. 发明申请

US20130196485A1 METHODS OF EPITAXIAL FINFET 有权
标题翻译：外延型FINFET的方法
公开(公告)号：US20130196485A1
公开(公告)日：2013-08-01
申请号：US13362398
申请日：2012-01-31
申请人： Nicholas LiCausi , Jeremy Wahl
发明人： Nicholas LiCausi , Jeremy Wahl
IPC分类号： H01L21/20
CPC分类号： H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211
摘要： Disclosed herein are various methods for better height control of the finFET patterned fins. In one example, this invention begins by depositing or growing an oxide material, for example, silicon dioxide. This oxide material is then patterned and etched to open windows or trenches to the substrate where fins will be grown. If a common channel material is desired, it is epitaxially grown in the windows. Then, some windows are covered and one pole of fins (for example nFET) are epitaxially grown in the exposed windows. The previously masked windows are opened and the newly formed fins are masked. The alternate channel material is then grown. The masked fins are then un-masked and the oxide is recessed to allow the fins to protrude from the oxide. This invention also allows for different channel materials for NMOS and PMOS.
摘要翻译：这里公开了用于更好地控制finFET图案的翅片的各种方法。在一个实例中，本发明通过沉积或生长氧化物材料，例如二氧化硅开始。然后对该氧化物材料进行图案化和蚀刻以将窗口或沟槽打开到衬底，其中翅片将被生长。如果需要共同的通道材料，则在窗户中外延生长。然后，覆盖一些窗口，并且在暴露的窗口中外延生长鳍的一个极（例如nFET）。先前掩蔽的窗户被打开，并且新形成的翅片被掩蔽。然后生长替代通道材料。掩蔽的翅片然后被掩蔽，并且氧化物凹陷以允许翅片从氧化物突出。本发明还允许用于NMOS和PMOS的不同通道材料。

2. 发明授权

US08476137B1 Methods of FinFET height control 有权
标题翻译： FinFET高度控制方法
公开(公告)号：US08476137B1
公开(公告)日：2013-07-02
申请号：US13370722
申请日：2012-02-10
申请人： Nicholas LiCausi , Jeremy Wahl
发明人： Nicholas LiCausi , Jeremy Wahl
IPC分类号： H01L21/336
CPC分类号： H01L21/823431 , H01L21/845
摘要： Disclosed herein are methods for better variable height control of FinFET patterned fins. In one example, the method includes forming a layer on a substrate, patterning that layer to create trenches, and forming a common stack material in the trenches. Next, a pFET masking material is formed over a portion of the structure, and an nFET channel material is formed in the unmasked trenches. The pFET masking material is removed and an nFET masking material is formed over the portion of the structure that includes the nFET channel material, and a pFET channel material is formed in the unmasked trenches. Next, the unmasked patterned material is made flush with the pFET channel material, thereby creating a difference in height with the masked pattern material. Finally, the nFET masking material is removed and the patterned layer is recessed to expose pFET and nFET channel material fin structures of differing heights.
摘要翻译：这里公开了用于FinFET图案化翅片的更好的可变高度控制的方法。在一个实例中，该方法包括在衬底上形成层，图案化该层以产生沟槽，以及在沟槽中形成共同的堆叠材料。接下来，在结构的一部分上形成pFET掩模材料，并且在未掩模的沟槽中形成nFET沟道材料。除去pFET掩模材料，并且在包括nFET沟道材料的结构的部分上形成nFET掩模材料，并且在未掩模的沟槽中形成pFET沟道材料。接下来，未屏蔽的图案化材料与pFET沟道材料齐平，从而与掩模图案材料形成高度差异。最后，去除nFET掩模材料，并且图案化层被凹入以暴露不同高度的pFET和nFET沟道材料鳍结构。

3. 发明授权

US08481410B1 Methods of epitaxial FinFET 有权
标题翻译：外延FinFET的方法
公开(公告)号：US08481410B1
公开(公告)日：2013-07-09
申请号：US13362398
申请日：2012-01-31
申请人： Nicholas LiCausi , Jeremy Wahl
发明人： Nicholas LiCausi , Jeremy Wahl
IPC分类号： H01L21/20
CPC分类号： H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211
摘要： Disclosed herein are various methods for better height control of the finFET patterned fins. In one example, this invention begins by depositing or growing an oxide material, for example, silicon dioxide. This oxide material is then patterned and etched to open windows or trenches to the substrate where fins will be grown. If a common channel material is desired, it is epitaxially grown in the windows. Then, some windows are covered and one pole of fins (for example nFET) are epitaxially grown in the exposed windows. The previously masked windows are opened and the newly formed fins are masked. The alternate channel material is then grown. The masked fins are then un-masked and the oxide is recessed to allow the fins to protrude from the oxide. This invention also allows for different channel materials for NMOS and PMOS.
摘要翻译：这里公开了用于更好地控制finFET图案的翅片的各种方法。在一个实例中，本发明通过沉积或生长氧化物材料，例如二氧化硅开始。然后对该氧化物材料进行图案化和蚀刻以将窗口或沟槽打开到衬底，其中翅片将被生长。如果需要共同的通道材料，则在窗户中外延生长。然后，覆盖一些窗口，并且在暴露的窗口中外延生长鳍的一个极（例如nFET）。先前掩蔽的窗户被打开，并且新形成的翅片被掩蔽。然后生长替代通道材料。掩蔽的翅片然后被掩蔽，并且氧化物凹陷以允许翅片从氧化物突出。本发明还允许用于NMOS和PMOS的不同通道材料。

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