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1. 发明授权

US06383906B1 Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumption 有权
标题翻译：在具有超低硅消耗的半导体晶片中形成结漏电的金属硅化物的方法
公开(公告)号：US06383906B1
公开(公告)日：2002-05-07
申请号：US09641436
申请日：2000-08-18
申请人： Karsten Wieczorek , Nicholas Kepler , Paul R. Besser , Larry Y. Wang
发明人： Karsten Wieczorek , Nicholas Kepler , Paul R. Besser , Larry Y. Wang
IPC分类号： H01L214763
CPC分类号： H01L29/6653 , H01L21/28518 , H01L29/665 , H01L29/6656 , H01L29/6659
摘要： A method for forming ultra shallow junctions in a semiconductor wafer uses disposable spacers and a silicon cap layer to achieve ultra-low low silicon consumption during a salicide formation process. A refractory metal layer, such as a cobalt layer, is deposited over the gate and source/drain junctions of a semiconductor device. Silicon nitride disposable spacers are formed over the metal layer in the region of the sidewall spacers previously formed on the sidewalls of the gate. A silicon cap layer is deposited over the metal layer and the disposable spacers. Rapid thermal annealing is performed to form the high-ohmic phase of the salicide, with the disposable spacers preventing interaction and between the cobalt and the silicon in the area between the gate and the source/drain junctions along the sidewall spacers. The silicon cap layer provides a source of silicon for consumption during the first phase of salicide formation, reducing the amount of silicon of the source/drain junctions that is consumed.
摘要翻译：在半导体晶片中形成超浅结的方法使用一次性间隔物和硅帽层，以在自对准硅化物形成过程中实现超低的低硅消耗。难熔金属层，例如钴层，沉积在半导体器件的栅极和源极/漏极结上。氮化硅一次性间隔物形成在预先形成在栅极的侧壁上的侧壁间隔区域中的金属层的上方。在金属层和一次性间隔物上沉积硅覆盖层。进行快速热退火以形成硅化物的高欧姆相，其中一次性间隔物防止了沿着侧壁间隔物的栅极和源极/漏极结之间的区域中的钴和硅之间的相互作用。硅封层在硅化物形成的第一阶段期间提供硅消耗源，从而减少消耗的源极/漏极结的硅量。

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