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1. 发明授权

US08334451B2 Discrete and integrated photo voltaic solar cells 有权
标题翻译：离散和集成的光伏太阳能电池
公开(公告)号：US08334451B2
公开(公告)日：2012-12-18
申请号：US10958698
申请日：2004-10-04
申请人： Nestore Polce , Ronald P. Clark , Nathan Zommer
发明人： Nestore Polce , Ronald P. Clark , Nathan Zommer
IPC分类号： H01L31/00
CPC分类号： H01L31/0508 , H01L31/0475 , H01L31/048 , H01L31/0504 , Y02E10/50
摘要： A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.
摘要翻译：光伏（PV）电池器件包括第一半导体衬底; 接合到第一半导体衬底的第二半导体衬底; 绝缘层，设置在所述第一和第二基板之间以将所述第一基板与所述第二基板电隔离; 限定在第一基板上的多个PV电池，每个PV电池包括n型区域和p型区域; 设置在所述第一基板中以分离所述PV电池的多个垂直沟槽，所述垂直沟槽终止于所述绝缘层; 设置在所述垂直沟槽内的多个隔离结构，每个隔离结构包括包括氧化物的第一隔离层和包括多晶硅的第二隔离层; 以及图案化以连接PV电池以提供X个串联的PV电池并且Y个PV电池并联的互连层。通过进行砷的离子注入形成n型区域，为n型区域提供浅的结深度，使PV电池器件针对阳光进行优化。

2. 发明申请

US20090326597A1 SOLAR CELL FOR IMPLANTABLE MEDICAL DEVICE 审中-公开
标题翻译：用于可植入医疗器械的太阳能电池
公开(公告)号：US20090326597A1
公开(公告)日：2009-12-31
申请号：US12490198
申请日：2009-06-23
申请人： Nathan Zommer
发明人： Nathan Zommer
IPC分类号： A61N1/378
CPC分类号： A61N1/3787 , H02J7/355
摘要： An implantable medical device includes a solar cell configured to provide energy to recharge a power source such as a battery. The power source is coupled to a control circuit of the medical device and provides power to the circuit. The solar cell may be coupled to the power source via a wire and may be distanced from a housing of the medical device. The solar cell may also be attached to the housing or may be disposed in the housing. The medical device may be implanted in the body of a host such that a surface of the solar cell is provided under a layer of skin of the host. The translucent property of skin allows the solar cell to receive light or infrared radiation from outside the body. The solar cell converts the received energy and provides the converted energy to the power source for recharging.
摘要翻译：可植入医疗装置包括被配置为提供能量以再充电诸如电池的电源的太阳能电池。电源耦合到医疗设备的控制电路，并向电路提供电力。太阳能电池可以通过电线耦合到电源，并且可以远离医疗装置的壳体。太阳能电池还可以附接到壳体或者可以设置在壳体中。医疗装置可以植入主体的主体中，使得太阳能电池的表面设置在主体皮肤层的下方。皮肤的半透明性使得太阳能电池能够从身体外部接收光或红外辐射。太阳能电池转换接收到的能量并将转换的能量提供给电源以进行充电。

3. 发明申请

US20050061361A1 Solar cell device having a charge pump 有权
标题翻译：具有电荷泵的太阳能电池装置
公开(公告)号：US20050061361A1
公开(公告)日：2005-03-24
申请号：US10936780
申请日：2004-09-07
申请人： Sam Ochi , Nathan Zommer
发明人： Sam Ochi , Nathan Zommer
IPC分类号： H01L31/00
CPC分类号： H01L31/02021 , H02J7/35 , Y02E10/50 , Y10S136/293
摘要： A solar cell device includes a solar cell section configured to output a first voltage upon receiving light. A charge pump circuit includes a first charge pump. The first charge pump includes a first terminal and a second terminal. The first terminal is configured to receive the first voltage from the solar cell section, and the second terminal is configured to output a second voltage that is higher than the first voltage. An output section is configured to receive an output voltage output by the charge pump circuit. The charge pump circuit is formed on a single semiconductor substrate.
摘要翻译：太阳能电池装置包括：太阳能电池部，被配置为在接收光时输出第一电压。电荷泵电路包括第一电荷泵。第一电荷泵包括第一端子和第二端子。第一端子被配置为从太阳能电池部接收第一电压，并且第二端子被配置为输出高于第一电压的第二电压。输出部分被配置为接收由电荷泵电路输出的输出电压。电荷泵电路形成在单个半导体衬底上。

4. 发明授权

US06323090B1 Semiconductor device with trenched substrate and method 有权
标题翻译：具有沟槽衬底和方法的半导体器件
公开(公告)号：US06323090B1
公开(公告)日：2001-11-27
申请号：US09332638
申请日：1999-06-09
申请人： Nathan Zommer
发明人： Nathan Zommer
IPC分类号： H01L21336
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0886 , H01L29/7397
摘要： A transistor structure has a recess formed in the upper surface of its base layer, an epitaxial (epi) layer grown on the upper surface in a manner to create a surface depression in the outer surface of the epi layer, the surface depression being generally aligned with the recess. A semiconductor element, such as a well or a gate, is formed on the epi layer aligned with the recess.
摘要翻译：晶体管结构在其基底层的上表面形成有凹槽，外延层（epi）层以在外表面的外表面形成表面凹陷的方式在上表面上生长，表面凹陷大致对齐与凹槽。在与凹部对准的外延层上形成诸如阱或栅极的半导体元件。

5. 发明授权

US5629552A Stable high voltage semiconductor device structure 失效
标题翻译：稳定的高压半导体器件结构
公开(公告)号：US5629552A
公开(公告)日：1997-05-13
申请号：US332526
申请日：1995-01-17
申请人： Nathan Zommer
发明人： Nathan Zommer
IPC分类号： H01L21/765 , H01L23/528 , H01L23/58 , H01L23/60 , H01L29/06 , H01L29/40
CPC分类号： H01L29/404 , H01L21/765 , H01L23/528 , H01L23/585 , H01L23/60 , H01L2924/0002
摘要： A power integrated circuit device with multiple guard rings and field plates overlying regions between each of the guard rings. Each of the field plates form overlying a dielectric layer also between each of the guard rings. Multiple field plates can exist between each of such guard rings. At least one field plate couples to a main junction region, and another field plate couples to a peripheral region, typically a scribe line. The present power device structure with multiple guard rings and field plates provides a resulting guard ring structure which allows for such device to achieve higher voltage applications.
摘要翻译：一种具有多个保护环和场板的功率集成电路装置，覆盖每个保护环之间的区域。每个场板也形成在每个保护环之间覆盖介电层。每个这样的保护环之间可以存在多个场板。至少一个场板耦合到主结区，并且另一个场板耦合到周边区域，通常是划线。具有多个保护环和场板的本发明的功率器件结构提供了最终的保护环结构，其允许这种器件实现更高的电压应用。

6. 发明授权

US5543335A Advanced power device process for low drop 失效
标题翻译：先进的功率器件工艺，用于低压降
公开(公告)号：US5543335A
公开(公告)日：1996-08-06
申请号：US57293
申请日：1993-05-05
申请人： Nathan Zommer
发明人： Nathan Zommer
IPC分类号： H01L21/04 , H01L21/306 , H01L21/22 , H01L21/38
CPC分类号： H01L21/04 , Y10S438/958
摘要： A method for fabricating a power semiconductor device with a low forward voltage drop using polymer passivation. A polymer passivation layer is deposited over the device. Impurities are introduced into the backside of the device by ion implantation, the backside of the device being on the opposite side of the semiconductor device from the polymer passivation layer. The impurities are then diffused into the semiconductor device.
摘要翻译：一种使用聚合物钝化制造具有低正向压降的功率半导体器件的方法。聚合物钝化层沉积在器件上。通过离子注入将杂质引入器件的背面，器件的背面位于半导体器件的与聚合物钝化层相反的一侧。然后将杂质扩散到半导体器件中。

7. 发明授权

US08986621B2 Methods and apparatuses for converting carbon dioxide and treating waste material 有权
标题翻译：用于转换二氧化碳和处理废料的方法和装置
公开(公告)号：US08986621B2
公开(公告)日：2015-03-24
申请号：US12788607
申请日：2010-05-27
申请人： Nathan Zommer
发明人： Nathan Zommer
IPC分类号： B01J19/08 , B01D50/00 , B01D53/00 , B01D53/62 , C01B31/24 , C01D7/07 , C01D7/18 , C01F5/24 , C01F11/18
CPC分类号： B01J19/085 , B01D53/007 , B01D53/62 , B01D2257/504 , B01D2259/812 , B01J2219/1944 , C01B32/60 , C01D7/07 , C01D7/18 , C01F5/24 , C01F11/18 , Y02C10/04 , Y02P20/152
摘要： Methods and apparatuses for converting carbon dioxide and treating waste material using a high energy electron beam are disclosed. For example, carbon dioxide and an aqueous reaction solution having a reactant can be combined to form an aqueous reaction mixture, and the aqueous reaction mixture can then be subjected to a high energy electron beam that initiates a reaction between carbon dioxide and the reactant to form a reaction product. Solid or liquid waste material can be treated by, for example, combining carbon dioxide and a solid or liquid waste material having a reactant and then subjecting the carbon dioxide and solid or liquid waste material having a reactant to a high energy electron beam to initiate a reaction between the carbon dioxide and the reactant to form a reaction product.
摘要翻译：公开了使用高能电子束转换二氧化碳和处理废料的方法和装置。例如，可以将具有反应物的二氧化碳和含水反应溶液组合以形成水反应混合物，然后将水性反应混合物经受高能电子束，其引发二氧化碳和反应物之间的反应以形成反应产物。固体或液体废料可以通过例如组合二氧化碳和具有反应物的固体或液体废物进行处理，然后使具有反应物的二氧化碳和固体或液体废料对高能电子束进行起始二氧化碳和反应物之间的反应形成反应产物。

8. 发明授权

US08471791B2 Video and content controlled backlight 有权
标题翻译：视频和内容控制背光
公开(公告)号：US08471791B2
公开(公告)日：2013-06-25
申请号：US11838768
申请日：2007-08-14
申请人： Nathan Zommer , Sam Seiichiro Ochi
发明人： Nathan Zommer , Sam Seiichiro Ochi
IPC分类号： G09G3/32
CPC分类号： G09F13/04 , G09G3/3413 , G09G3/3426 , G09G2310/0232 , G09G2320/0238 , G09G2320/043 , G09G2320/0646 , G09G2320/066 , G09G2330/021 , H05B33/0818 , H05B33/086
摘要： A display device includes a display panel; and a backlight panel provided below the display panel and defining a plurality of regions. A first array of light emitting diodes (LEDs) is provided along a first direction, each LED of the first array being coupled to a first line. A driver is coupled to the first line to drive the LEDs coupled to the first line. A second array of LEDs is provided along a second direction, each LEDs of the second array being coupled to a second line. A lighting condition of the regions defined by the backlight panel is controlled by turning on or off the LEDs.
摘要翻译：显示装置包括显示面板; 以及设置在显示面板下方并限定多个区域的背光面板。第一阵列的发光二极管（LED）沿第一方向设置，第一阵列的每个LED耦合到第一线。驱动器耦合到第一线以驱动耦合到第一线的LED。沿着第二方向提供第二阵列LED，第二阵列的每个LED耦合到第二线。通过打开或关闭LED来控制由背光面板限定的区域的照明条件。

9. 发明授权

US06710405B2 Non-uniform power semiconductor device 有权
标题翻译：不均匀功率半导体器件
公开(公告)号：US06710405B2
公开(公告)日：2004-03-23
申请号：US09764545
申请日：2001-01-17
申请人： Nathan Zommer , Vladimir Tsukanov
发明人： Nathan Zommer , Vladimir Tsukanov
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0865 , H01L29/1095 , H01L29/7811
摘要： An active area of a power device comprises active cells having designs that vary depending on where they are located in the active area. Design variations include structural variations and variations in the material used to produce the cells.
摘要翻译：功率器件的有源区域包括具有根据它们位于有源区域中的位置而变化的设计的有源单元。设计变化包括用于生产细胞的材料的结构变化和变化。

10. 发明授权

US06683344B2 Rugged and fast power MOSFET and IGBT 有权
标题翻译：坚固耐用的功率MOSFET和IGBT
公开(公告)号：US06683344B2
公开(公告)日：2004-01-27
申请号：US10237561
申请日：2002-09-06
申请人： Vladimir Tsukanov , Nathan Zommer
发明人： Vladimir Tsukanov , Nathan Zommer
IPC分类号： H01L2978
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/086
摘要： A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon design. A gate electrode overlies the upper surface of the substrate. A drain electrode is provided proximate to the lower surface of the substrate.
摘要翻译：功率半导体器件包括具有上表面和下表面的衬底。在第二导电性的阱区内形成第一导电性的源极区。源极区域靠近衬底的上表面设置。井区具有非多边形设计。栅电极覆盖在衬底的上表面上。漏极电极靠近衬底的下表面设置。

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