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1. 发明申请

US20180205007A1 HIGH PERFORMANCE MICROWAVE DIELECTRIC SYSTEMS AND METHODS 审中-公开
公开(公告)号：US20180205007A1
公开(公告)日：2018-07-19
申请号：US15921102
申请日：2018-03-14
申请人： Nathan Newman , Lingtao Liu
发明人： Nathan Newman , Lingtao Liu
IPC分类号： H01L43/08 , H01B3/12 , C04B35/468 , C04B35/491 , C04B35/495 , H01B3/10
CPC分类号： H01L43/08 , C04B35/4686 , C04B35/491 , C04B35/495 , C04B2235/3215 , C04B2235/3251 , C04B2235/3275 , C04B2235/3281 , C04B2235/3284 , C04B2235/76 , C04B2235/761 , C04B2235/768 , H01B3/10 , H01B3/12
摘要： Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.

2. 发明申请

US20160352314A1 HIGH PERFORMANCE MICROWAVE DIELECTRIC SYSTEMS AND METHODS 有权
标题翻译：高性能微波介质系统和方法
公开(公告)号：US20160352314A1
公开(公告)日：2016-12-01
申请号：US14464518
申请日：2014-08-20
申请人： Nathan Newman , Lingtao Liu
发明人： Nathan Newman , Lingtao Liu
IPC分类号： H03K3/59 , H01L43/08
CPC分类号： H01L43/08 , C04B35/4686 , C04B35/491 , C04B35/495 , C04B2235/3215 , C04B2235/3251 , C04B2235/3275 , C04B2235/3281 , C04B2235/3284 , C04B2235/76 , C04B2235/761 , C04B2235/768 , H01B3/10 , H01B3/12
摘要： Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.
摘要翻译：微波介质材料中的损耗切线可以通过施加外部磁场而被修改（增加和/或减小），特别是在低温温度下。配置有具有施加磁场的电介质部件的示例性电气装置，例如谐振器，滤波器，放大器，混频器和光子检测器可以实现质量因子和/或损耗角正切修改超过两个数量级的改进。

3. 发明授权

US5157466A Grain boundary junctions in high temperature superconductor films 失效
标题翻译：高温超导体膜中的晶界结
公开(公告)号：US5157466A
公开(公告)日：1992-10-20
申请号：US672664
申请日：1991-03-19
申请人： Kookrin Char , Stephen M. Garrison , Nathan Newman , Gregory G. Zaharchuk
发明人： Kookrin Char , Stephen M. Garrison , Nathan Newman , Gregory G. Zaharchuk
IPC分类号： C30B29/22 , H01L20060101 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702
摘要： Grain boundary, weak-link junctions are formed at a predermined location of a uniform, planar substrate by depositing superconducting film on two sections of the substrate. The film is grown as a bicrystal having two distinct areas of superconducting film whose crystal lattices are rotated with respect to each other, either in-plane or out-of-plane, by more than 5.degree. and less than 90.degree.. The grain boundary acts as a weak link junction. The film can be induced to grow as a bicrystal by depositing intermediate strata such as seed layers or buffer layers or by modifying the growth conditions during deposition.
摘要翻译：通过在衬底的两个部分上沉积超导膜，在均匀的平面衬底的预制位置处形成晶界，弱连接结。该膜生长为具有两个不同区域的超导膜的双晶体，其晶格相对于彼此旋转，面内或外面超过5度且小于90度。晶界作为弱连接点。通过沉积中间层如种子层或缓冲层，或者通过在沉积期间改变生长条件，可以将膜诱导成双晶体生长。

4. 发明授权

US5132282A High temperature superconductor-strontium titanate sapphire structures 失效
标题翻译：高温超导体 - 钛酸锶蓝宝石结构
公开(公告)号：US5132282A
公开(公告)日：1992-07-21
申请号：US495568
申请日：1990-03-16
申请人： Nathan Newman , Kookrin Char
发明人： Nathan Newman , Kookrin Char
IPC分类号： C30B23/02 , C30B25/02 , H01L39/24
CPC分类号： H01L39/2461 , C30B23/02 , C30B25/02 , C30B29/22 , C30B29/225 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A HTSC layered structure comprising a substrate such as sapphire, a strontium titanate buffer layer and a HTSC film such as YBa.sub.2 Cu.sub.3 O.sub.7 provides a superconductor having lower surface resistance and a narrower transition temperature.
摘要翻译：包括诸如蓝宝石，钛酸锶缓冲层和HTSC膜如YBa2Cu3O7的衬底的HTSC层状结构提供了具有较低表面电阻和较窄转变温度的超导体。

5. 发明授权

US5126533A Substrate heater utilizing protective heat sinking means 失效
标题翻译：衬底加热器采用保护散热装置
公开(公告)号：US5126533A
公开(公告)日：1992-06-30
申请号：US494738
申请日：1990-03-19
申请人： Nathan Newman , Kookrin Char
发明人： Nathan Newman , Kookrin Char
IPC分类号： H01L21/00 , H01L39/24
CPC分类号： H01L21/67103 , H01L39/2422
摘要： A substrate heater for the production of superconducting films utilizing a nickel alloy block uniformly heated with a resistance heating element fully immersed in a brazing material that fills a recess in the block. Massive electric power connectors surround the heating element leads outside the braze material so as to provide a protective heat sink therefor and also to mechanically strengthen the block against warpage.
摘要翻译：一种用于生产超导薄膜的基板加热器，该超导薄膜利用完全浸入填充块中的凹部的钎焊材料的电阻加热元件均匀加热的镍合金块。大容量电力连接器将加热元件引线环绕在钎焊材料外部，以便为其提供保护性散热器，并且还可以使块体抵抗翘曲而机械地加强。

6. 发明授权

US10790144B2 Method to produce pyrite 有权
公开(公告)号：US10790144B2
公开(公告)日：2020-09-29
申请号：US14900307
申请日：2014-06-23
申请人： Nathan Newman , Mahmoud Vahidi , Stephen Lehner , Peter Buseck
发明人： Nathan Newman , Mahmoud Vahidi , Stephen Lehner , Peter Buseck
IPC分类号： H01L21/00 , H01L21/02 , H01L29/04 , H01L29/24
摘要： A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single-crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.

7. 发明授权

US08094771B2 Nuclear voltaic cell 有权
标题翻译：核电池
公开(公告)号：US08094771B2
公开(公告)日：2012-01-10
申请号：US10720035
申请日：2003-11-21
申请人： Francis Yu-Hei Tsang , Tristan Dieter Juergens , Yale Deon Harker , Kwan Sze Kwok , Nathan Newman , Scott Arden Ploger
发明人： Francis Yu-Hei Tsang , Tristan Dieter Juergens , Yale Deon Harker , Kwan Sze Kwok , Nathan Newman , Scott Arden Ploger
IPC分类号： G21D7/00
CPC分类号： G21H1/04
摘要： The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.
摘要翻译：本发明描述了从核电直接产生电力的产品和方法。更具体地说，本发明描述了使用液体半导体作为有效地将核能裂变和/或辐射能量直接转换成电能的手段。通过将核材料置于液体半导体附近来实现核能直接转换为电能。以核裂变碎片或辐射的形式从核材料发射的核能进入液体半导体并形成电子 - 空穴对。通过使用适当的电路，施加电负载并且由于电子 - 空穴对的产生而产生电能。

8. 发明申请

US20100286793A1 DEVICE FOR MINIMALLY INVASIVE PLASTIC SURGERY LIFT PROCEDURE 有权
标题翻译：最小入侵塑料手术提升程序的设备
公开(公告)号：US20100286793A1
公开(公告)日：2010-11-11
申请号：US12774980
申请日：2010-05-06
申请人： Nathan Newman , Umesh H. Patel
发明人： Nathan Newman , Umesh H. Patel
IPC分类号： A61F2/04 , A61K38/18 , A61F2/00 , A61K9/14 , A61P41/00 , B32B37/00 , A61F2/02
CPC分类号： A61B17/083 , A61B2017/00792 , A61B2017/088 , A61F2/0059 , A61L31/005 , A61L31/06 , A61L31/10 , A61L31/148 , C08L67/04 , C08L89/00
摘要： Described are medical devices configured for use in cosmetic surgery. The medical devices include an elongate body member having a proximal end, a distal end, and a plurality of gaps defined therebetween. At least a portion of the body member is associated with one or more layers of a collagenous extracellular matrix (ECM) material. The elongate member can include one or more tissue engaging members. In preferred embodiments, the collagenous extracellular matrix material includes one or more native or non-native bioactive components.
摘要翻译：描述了配置用于整容手术的医疗装置。医疗装置包括具有近端，远端和限定在其间的多个间隙的细长主体构件。身体构件的至少一部分与一个或多个胶原细胞外基质（ECM）材料层相关联。细长构件可以包括一个或多个组织接合构件。在优选的实施方案中，胶原细胞外基质材料包括一种或多种天然或非天然生物活性组分。

9. 发明授权

US5657335A P-type gallium nitride 失效
标题翻译： P型氮化镓
公开(公告)号：US5657335A
公开(公告)日：1997-08-12
申请号：US146502
申请日：1993-11-01
申请人： Michael Rubin , Nathan Newman , Tracy Fu , Jennifer Ross , James Chan
发明人： Michael Rubin , Nathan Newman , Tracy Fu , Jennifer Ross , James Chan
IPC分类号： H01L33/00 , H01L33/32
CPC分类号： H01L33/32 , H01L21/2233 , H01L21/26546 , H01L33/007 , H01L33/325
摘要： Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.
摘要翻译：已经发现了几种制造p型氮化镓的方法。长期以来一直在寻求电子器件的P型氮化镓。 N型氮化镓容易获得。发现p型氮化镓及其制造方法将能够用于紫外线和蓝色发光二极管和激光器。 pGaN将进一步使得能够制造蓝色光电阴极元件。在适当温度下保持的衬底上的分子束外延由适当能量的氮气束辅助产生几种类型的具有约5×10 11 / cm 3的空穴浓度和约500cm 2 / V-sec的空穴迁移率的p型GaN，其在 250°K .P型GaN可以由无意掺杂的材料形成，或者可以通过扩散，离子注入或共蒸发掺杂镁。当适用时，氮气可以被其他III族元素如Al取代。

10. 发明授权

US09947861B2 High performance microwave dielectric systems and methods 有权
公开(公告)号：US09947861B2
公开(公告)日：2018-04-17
申请号：US14464518
申请日：2014-08-20
申请人： Nathan Newman , Lingtao Liu
发明人： Nathan Newman , Lingtao Liu
IPC分类号： H03K3/59 , H01L43/08 , H01B3/12 , H01B3/10 , C04B35/468 , C04B35/491 , C04B35/495
CPC分类号： H01L43/08 , C04B35/4686 , C04B35/491 , C04B35/495 , C04B2235/3215 , C04B2235/3251 , C04B2235/3275 , C04B2235/3281 , C04B2235/3284 , C04B2235/76 , C04B2235/761 , C04B2235/768 , H01B3/10 , H01B3/12
摘要： Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.

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