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    • 2. 发明授权
    • Lubricating compositions, functional fluids and greases containing
thiophosphorus esters or their salts with a oxyalkylene group, and
methods of using the same
    • 含有硫代磷酸酯或其与氧化烯基团的盐的润滑组合物,功能性流体和油脂及其使用方法
    • US5968880A
    • 1999-10-19
    • US956083
    • 1997-10-23
    • Naresh Chand MathurMary Galic Raguz
    • Naresh Chand MathurMary Galic Raguz
    • C10M137/10C10M153/04C10M137/04
    • C10M137/105C10M153/04
    • This invention relates to a lubricating composition comprising a major amount of an oil of lubricating viscosity and at least one metal-free thiophosphorus acid ester, at least one amine salt of the thiophosphorus acid ester, or a mixture thereof, wherein the thiophosphorus acid ester contains at least one hydrocarbyl terminated oxyalkylene group, at least one hydrocarbyl terminated polyoxyalkylene group, or a mixture thereof. In one embodiment, the thiophosphorus acid ester is a thiophosphorus acid ester represented by the following formula ##STR1## wherein X.sub.1, X.sub.2, and X.sub.3 are oxygen or sulfur, provided that at least one of X.sub.1, X.sub.2, and X.sub.3 is sulfur; R.sub.1 is a hydrocarbyl group; R.sub.2 is an alkylene group; R.sub.3 is hydrogen or a hydrocarbyl group; x is a number from 1 to about 40; and a is 0, 1, or 2, or at least one salt of the thiophosphorus acid ester. The lubricating compositions, functional fluids and greases have improved antiwear/extreme pressure properties and improved antioxidation properties. In functional fluids, the thiophosphorus acid esters and their salts act as antiwear agents and rust inhibitors.
    • 本发明涉及一种润滑组合物,其包含主要量的润滑粘度的油和至少一种不含金属的硫代磷酸酯,至少一种硫代磷酸酯的胺盐或其混合物,其中硫代磷酸酯包含 至少一个烃基封端的氧化烯基团,至少一个烃基封端的聚氧化烯基团,或其混合物。 在一个实施方案中,硫代磷酸酯是由下式表示的硫代磷酸酯,其中X 1,X 2和X 3是氧或硫,条件是X 1,X 2和X 3中的至少一个是硫; R1是烃基; R2是亚烷基; R3是氢或烃基; x是从1到大约40的数字; 和a是0,1或2,或至少一种硫代磷酸酯的盐。 润滑组合物,功能性流体和润滑脂具有改善的抗磨损/极压性能和改善的抗氧化性能。 在功能性流体中,硫代磷酸酯及其盐作为抗磨剂和防锈剂。
    • 3. 发明授权
    • Phototransistor with quantum well base structure
    • 具有量子阱结构的光电晶体管
    • US5399880A
    • 1995-03-21
    • US104969
    • 1993-08-10
    • Naresh Chand
    • Naresh Chand
    • H01L31/0352H01L31/11H01L27/14H01L31/00
    • B82Y20/00H01L31/035254H01L31/1105
    • A long wavelength (6 to 20 .mu.m) phototransistor is described which has n-doped silicon as emitter and collector regions bracketing a base region having a quantum well structure made up of alternating layers of p-doped silicon germanium and undoped silicon, The silicon germanium layer adjacent to the emitter region is thicker and has a higher percentage of germanium in order to provide a quantum well that is wider and deeper than the other quantum wells in the base region thereby resulting in a larger current and optical gain. The silicon barrier layer of the quantum well closest to the collector region is p-doped in order to reduce the leakage current of the base-collector junction.
    • 描述了长波长(6至20μm)的光电晶体管,其具有作为发射极的n掺杂硅,并且收集器区域包围具有由p掺杂硅锗和未掺杂硅的交替层组成的量子阱结构的基极区域。硅 与发射极区相邻的锗层较厚并且具有较高百分比的锗,以便提供比基极区域中的其它量子阱更宽更深的量子阱,从而导致更大的电流和光学增益。 最接近集电极区域的量子阱的硅势垒层是p掺杂的,以便减小基极 - 集电极结的漏电流。