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1. 发明授权

US08519371B2 Nonvolatile memory device and method for manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08519371B2
公开(公告)日：2013-08-27
申请号：US12876870
申请日：2010-09-07
申请人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
发明人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/1666 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.
摘要翻译：根据一个实施例，非易失性存储器件包括衬底，第一电极，第二电极和存储器。第一电极设置在基板上。第二电极在第一电极上交叉。存储部设置在第一电极和第二电极之间。与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积第一电极和第二电极通过交叉相互相对。

2. 发明授权

US08021565B2 Surface treatment method, etching method, and method for manufacturing electronic device 有权
标题翻译：表面处理方法，蚀刻方法和电子器件的制造方法
公开(公告)号：US08021565B2
公开(公告)日：2011-09-20
申请号：US12054092
申请日：2008-03-24
申请人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
发明人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
IPC分类号： C03C15/00
CPC分类号： H01L21/02071 , Y10S438/905 , Y10S438/906
摘要： A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
摘要翻译：表面处理方法包括：通过氧气等离子体处理从工件表面除去含氟烃反应产物。工件包括多个层。通过连续蚀刻工件的层来沉积含碳氟化合物的反应产物。该方法还包括在除去反应产物之后，使用氟化氢气体从工件的表面除去含氧化物的反应产物。

3. 发明申请

US20110073489A1 CLEANING LIQUID, CLEANING METHOD, CLEANING SYSTEM, AND METHOD FOR MANUFACTURING MICROSTRUCTURE 审中-公开
标题翻译：清洁液，清洁方法，清洁系统和制造微结构的方法
公开(公告)号：US20110073489A1
公开(公告)日：2011-03-31
申请号：US12880450
申请日：2010-09-13
申请人： Naoya Hayamizu , Makiko Tange , Yoshiaki Kurokawa , Nobuo Kobayashi , Masaaki Kato , Yusuke Ogawa , Hiroki Domon
发明人： Naoya Hayamizu , Makiko Tange , Yoshiaki Kurokawa , Nobuo Kobayashi , Masaaki Kato , Yusuke Ogawa , Hiroki Domon
IPC分类号： C25F1/00 , C25F7/00
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/67051
摘要： According to embodiments, a cleaning liquid includes an oxidizing substance and hydrofluoric acid and exhibiting acidity. A cleaning method is disclosed. The method includes producing an oxidizing solution including an oxidizing substance by one selected from electrolyzing a sulfuric acid solution, electrolyzing hydrofluoric acid added to a sulfuric acid solution, and mixing a sulfuric acid solution with aqueous hydrogen peroxide. The method includes supplying the oxidizing solution and hydrofluoric acid to a surface of an object to be cleaned.
摘要翻译：根据实施方案，清洗液体包含氧化物质和氢氟酸并具有酸性。公开了一种清洁方法。该方法包括：通过选择电解硫酸溶液，电解加入到硫酸溶液中的氢氟酸，并将硫酸溶液与过氧化氢水溶液混合，制备包含氧化物质的氧化溶液。该方法包括将氧化溶液和氢氟酸供给到待清洁物体的表面。

4. 发明申请

US20110037045A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110037045A1
公开(公告)日：2011-02-17
申请号：US12876870
申请日：2010-09-07
申请人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
发明人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/1666 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.
摘要翻译：根据一个实施例，非易失性存储器件包括衬底，第一电极，第二电极和存储器。第一电极设置在基板上。第二电极在第一电极上交叉。存储部设置在第一电极和第二电极之间。与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积第一电极和第二电极通过交叉相互相对。

5. 发明申请

US20090321272A1 Sulfuric acid electrolysis process 有权
标题翻译：硫酸电解过程
公开(公告)号：US20090321272A1
公开(公告)日：2009-12-31
申请号：US12459161
申请日：2009-06-26
申请人： Masaaki Kato , Yusuke Ogawa , Hiroki Domon , Naoya Hayamizu , Makiko Tange , Yoshiaki Kurokawa , Nobuo Kobayashi
发明人： Masaaki Kato , Yusuke Ogawa , Hiroki Domon , Naoya Hayamizu , Makiko Tange , Yoshiaki Kurokawa , Nobuo Kobayashi
IPC分类号： C25B15/00
CPC分类号： C25B1/285
摘要： Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa≧1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc≧1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant) Equation (I) Fe=(I×S×R×T)/(2×Faraday constant) Equation (2) I: Electrolytic current (A)S: Time: 60 second (Fixed)R: Gas constant (0.082 1·atm/K/mol)K: Absolute temperature (273.15 degree Celsius+T degree Celsius)T: Electrolysis temperature (degree Celsius)Faraday constant: (C/mol)
摘要翻译：硫酸电解法其中; 供给阳极室和阴极室的含有硫酸的电解质的温度控制在30摄氏度以上; 将供给到阳极室的含有硫酸的电解质的流量F1（L / min）控制为气体的流量Fa（L / min）的1.5倍以上（F1 / Fa> 1.5）形成在阳极侧，由下述式（1）算出，将含有供给阴极室的硫酸的电解质的流量F2（L / min）控制在1.5倍以上（F2 / Fc> = 1.5）由下面所示的等式（2）计算的在阴极侧形成的气体的流速Fe（L / min）。 Fa =（IxSxRxT）/（4xFaraday常数）等式（I）Fe =（IxSxRxT）/（2xFaraday常数）等式（2）I：电解电流（A）S：时间：60秒（固定）R：气体常数（0.082 1.atm / K / mol）K：绝对温度（273.15摄氏度+ T摄氏度）T：电解温度（摄氏度）法拉第常数：（C / mol）

6. 发明申请

US20090000640A1 SURFACE TREATMENT METHOD, ETCHING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
标题翻译：表面处理方法，蚀刻方法和制造电子器件的方法
公开(公告)号：US20090000640A1
公开(公告)日：2009-01-01
申请号：US12054092
申请日：2008-03-24
申请人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
发明人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
IPC分类号： B08B6/00
CPC分类号： H01L21/02071 , Y10S438/905 , Y10S438/906
摘要： A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
摘要翻译：表面处理方法包括：通过氧气等离子体处理从工件表面除去含氟烃反应产物。工件包括多个层。通过连续蚀刻工件的层来沉积含碳氟化合物的反应产物。该方法还包括在除去反应产物之后，使用氟化氢气体从工件的表面除去含氧化物的反应产物。

7. 发明申请

US20080233452A1 POLYELECTROLYTE MATERIAL, METHOD FOR PRODUCING POLYELECTROLYTE MATERIAL, POLYELECTROLYTE COMPONENT, FUEL CELL, AND METHOD FOR PRODUCING FUEL CELL 失效
标题翻译：聚电解质材料，聚电解质材料的制造方法，聚电解质成分，燃料电池及燃料电池的制造方法
公开(公告)号：US20080233452A1
公开(公告)日：2008-09-25
申请号：US11858533
申请日：2007-09-20
申请人： Naoya Hayamizu , Yukihiro Shibata , Akiko Saito , Jun Momma , Hideo Oota
发明人： Naoya Hayamizu , Yukihiro Shibata , Akiko Saito , Jun Momma , Hideo Oota
IPC分类号： H01M8/10
CPC分类号： H01M8/1025 , C08G65/405 , C08G65/4056 , C08G65/4087 , C08J5/2256 , C08J2371/12 , H01M4/8605 , H01M8/0289 , H01M8/1011 , H01M2300/0082 , Y02E60/523 , Y02P70/56
摘要： A polyelectrolyte material includes as a main chain: a benzene ring; an ether; and a carbonyl group. A part of the benzene ring is sulfonated. A method for manufacturing a polyelectrolyte material includes: synthesizing disulfonyl difluorobenzophenone; and polymerizing the disulfonyl difluorobenzophenone, 4,4′-difluorobenzophenone, and phenolphthalein with a crown ether as a catalyst. The synthesizing is performed by reacting 4,4′-difluorobenzophenone with fuming sulfuric acid, performing salting-out the reaction product, and recrystallizing the salting-out product.
摘要翻译：聚电解质材料包括主链：苯环; 一个醚和羰基。苯环的一部分被磺化。聚电解质材料的制造方法包括：合成二磺酰基二氟二苯甲酮; 并用冠醚作为催化剂使二磺酰基二氟二苯甲酮，4,4'-二氟二苯甲酮和酚酞聚合。合成通过使4,4'-二氟二苯甲酮与发烟硫酸反应，进行反应产物盐析，并重结晶盐析产物。

8. 发明申请

US20050205109A1 Washing method, method of manufacturing semiconductor device and method of manufacturing active matrix-type display device 审中-公开
标题翻译：洗涤方法，制造半导体器件的方法和制造有源矩阵型显示装置的方法
公开(公告)号：US20050205109A1
公开(公告)日：2005-09-22
申请号：US10968358
申请日：2004-10-20
申请人： Naoya Hayamizu
发明人： Naoya Hayamizu
IPC分类号： H01L21/304 , B08B3/02 , B08B3/12 , G02F1/1333 , H01L21/02 , H01L21/306 , H01L21/3213
CPC分类号： H01L21/02071 , B08B3/02 , B08B3/12 , B08B2203/0288 , G02F1/1333 , G02F2001/1316 , H01L21/02052
摘要： In an ultrasonic washing method of washing a thing to be washed by supplying ultrasonic-wave-applied cleaning fluid to the thing, the ultrasonic wave is applied to the cleaning fluid in such a manner that the ultrasonic wave is turned on and off repeatedly at specific time intervals.
摘要翻译：在通过向物品供给超声波施加的清洗液来洗涤被洗涤物的超声波清洗方法中，将超声波以这样的方式施加到清洗液，使得超声波以特定的方式反复打开和关闭时间间隔。

9. 发明授权

US06444255B1 Method for producing liquid crystal display and method for cleaning substrate 有权
公开(公告)号：US06444255B1
公开(公告)日：2002-09-03
申请号：US09781399
申请日：2001-02-13
申请人： Yoshiyuki Nagahara , Naoya Hayamizu , Naoaki Sakurai , Noriko Okoshi , Toshitaka Nonaka , Hiroaki Furuya
发明人： Yoshiyuki Nagahara , Naoya Hayamizu , Naoaki Sakurai , Noriko Okoshi , Toshitaka Nonaka , Hiroaki Furuya
IPC分类号： B05D512
摘要： An electrode substrate is brush cleaned with a hydrogen gas dissolved water, which has an oxidation-reduction potential of −860 mV to −400 mV and a pH of 8 to 12, before applying an alignment layer material on the electrode substrate. Thus, it is possible to decrease the manufacturing costs without decreasing the detergency.

10. 发明授权

US06230738B1 Flow rate control valve and flow rate control system 失效
标题翻译：流量控制阀和流量控制系统
公开(公告)号：US06230738B1
公开(公告)日：2001-05-15
申请号：US09558785
申请日：2000-04-26
申请人： Yasushi Watanabe , Keiichiro Senda , Hiroshi Fujita , Naoya Hayamizu , Hideaki Hirabayashi
发明人： Yasushi Watanabe , Keiichiro Senda , Hiroshi Fujita , Naoya Hayamizu , Hideaki Hirabayashi
IPC分类号： F16K3102
CPC分类号： F16K31/004 , Y10T137/7759
摘要： A flow rate control valve comprises a driver in which a rotary shaft is rotated to adjust the opening degree of a valve body. The driver is an ultrasonic motor comprising a stator having piezoelectric elements mounted thereto and a rotor mounted to the rotary shaft and resiliently pressed against the stator.
摘要翻译：流量控制阀包括旋转轴旋转以调节阀体的开度的驱动器。驱动器是包括具有安装在其上的压电元件的定子和安装在旋转轴上并且弹性地压靠定子的转子的超声波马达。

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