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    • 2. 发明申请
    • Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods
    • 制造反射光学元件的方法,反射光学元件,Euv光刻设备以及用于操作光学元件和Euv光刻设备的方法,用于确定相移的方法,用于确定层厚度的方法以及用于执行方法的设备
    • US20070285643A1
    • 2007-12-13
    • US10598481
    • 2005-03-04
    • Marco WedowskiNadyeh SharilooFrank ScholzeJohannes Tuemmler
    • Marco WedowskiNadyeh SharilooFrank ScholzeJohannes Tuemmler
    • G03B27/54G01B9/00
    • G01B11/0625G03F7/70958
    • The invention relates to a method for manufacturing of a multilayer system (25) with a cap layer system (30), in particular for a reflective optical element for the extreme ultraviolet up to the soft x-ray wavelength range, comprising the steps of: 1. preparing a coating design for the multilayer system (25) with cap layer system (30); 2. coating a substrate (20) with the multilayer system (25) with cap layer system (30); 3. spatially resolved measurement of the coated substrate in terms of reflectance and photoelectron current in at least one surface point; 4. comparison of the measured data with data modelled for different thicknesses of the layers (31, 32, 33) of the cap layer system (30) and/or the layers (21, 22, 23, 24) of the multilayer system (25) for determining of the thickness distribution obtained by the coating; 5. if necessary, adjusting of the coating parameters and repeating steps 2 to 5 until the coated thickness distribution coincides with the design. The invention also relates to further manufacturing methods, reflective optical elements, EUV-lithography apparatuses, and methods for operating optical elements and EUV-lithography apparatuses as well as methods for determining the phase shift, methods for determining the layer thickness, and apparatuses for carrying out the methods.
    • 本发明涉及一种用于制造具有盖层系统(30)的多层系统(25)的方法,特别是用于直到软x射线波长范围的极紫外线的反射光学元件,包括以下步骤: 1.制备具有盖层系统(30)的多层系统(25)的涂层设计; 用盖层系统(30)用多层系统(25)涂覆基底(20); 3.在至少一个表面点的反射率和光电子电流方面,对涂覆的基底进行空间分辨测量; 4.测量数据与盖层系统(30)的层(31,32,33)和/或多层系统的层(21,22,23,24)的不同厚度建模的数据的比较( 25),用于确定由涂层获得的厚度分布; 5.如果需要,调整涂层参数并重复步骤2至5,直到涂层厚度分布与设计一致。 本发明还涉及进一步的制造方法,反射光学元件,EUV光刻设备以及用于操作光学元件和EUV光刻设备的方法以及用于确定相移的方法,用于确定层厚度的方法以及用于承载的设备 出来的方法。