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1. 发明申请

WO2004084282A1 BIFACIAL STRUCTURE FOR TANDEM SOLAR CELL FORMED WITH AMORPHOUS SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：用非晶半导体材料形成的TANDEM太阳能电池的微结构
公开(公告)号：WO2004084282A1
公开(公告)日：2004-09-30
申请号：PCT/US2003/007815
申请日：2003-03-14
申请人： MIDWEST RESEARCH INSTITUTE , YOUNG, David, L. , NOUFI, Rommel
发明人： YOUNG, David, L. , NOUFI, Rommel
IPC分类号： H01L21/20
CPC分类号： H01L31/0322 , H01L31/043 , H01L31/0749 , Y02E10/541
摘要： The present invention provides a bifacial solar cell (5) with two thin-film polycrystalline or amorphous cells formed on opposing sides of a transparent substrate (10) so that high temperature deposition of all absorber layers (24, 44) can be completed before deposition of any window layers (26, 46) at lower temperatures, which would diffuse into the absorber layers (24, 44) at high temperatures, to avoid degradation or destruction of p/n junctions (25) by such diffusion. The bifacial solar cell (5) may be manufactured by either sequential or simultaneous deposition of absorber layers (24, 44) and by either sequential or simultaneous deposition of window layers (26, 46) of each cell.
摘要翻译：本发明提供了一种双面太阳能电池（5），其具有形成在透明基板（10）的相对侧上的两个薄膜多晶或非晶电池，使得可以在沉积之前完成所有吸收层（24,44）的高温沉积的任何窗口层（26,46），其在较高温度下将扩散到吸收层（24,44）中，以避免通过这种扩散而导致p / n结（25）的劣化或破坏。双面太阳能电池（5）可以通过顺序或同时沉积吸收层（24,44）以及通过顺序或同时沉积每个电池的窗口层（26,46）来制造。

2. 发明申请

WO2012177804A2 IMPROVED CdTe DEVICES AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：改进的CdTe器件及其制造方法
公开(公告)号：WO2012177804A2
公开(公告)日：2012-12-27
申请号：PCT/US2012043404
申请日：2012-06-20
申请人： ALLIANCE SUSTAINABLE ENERGY , GESSERT TIMOTHY A , NOUFI ROMMEL , DHERE RAMESH G , ALBIN DAVID S , BARNES TERESA , BURST JAMES , DUENOW JOEL N , REESE MATTHEW
发明人： GESSERT TIMOTHY A , NOUFI ROMMEL , DHERE RAMESH G , ALBIN DAVID S , BARNES TERESA , BURST JAMES , DUENOW JOEL N , REESE MATTHEW
IPC分类号： H01L21/10
CPC分类号： H01L31/1828 , H01L21/0237 , H01L21/02474 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02664 , H01L31/0296 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
摘要翻译：提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。

3. 发明申请

WO1996025768A1 METHOD OF FABRICATING HIGH-EFFICIENCY Cu(In,Ga)(Se,S)2 THIN FILMS FOR SOLAR CELLS 审中-公开
标题翻译：制造用于太阳能电池的高效Cu（In，Ga）（Se，S）2薄膜的方法
公开(公告)号：WO1996025768A1
公开(公告)日：1996-08-22
申请号：PCT/US1995001923
申请日：1995-02-16
申请人： MIDWEST RESEARCH INSTITUTE , NOUFI, Rommel , GABOR, Andrew, M. , TUTTLE, John, R. , TENNANT, Andrew, L. , CONTRERAS, Miguel, A. , ALBIN, David, S. , CARAPELLA, Jeffrey, J.
发明人： MIDWEST RESEARCH INSTITUTE
IPC分类号： H01L31/0296
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521 , Y10S438/93
摘要： A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S)2 comprises depositing a first layer (16) of (In,Ga)x(Se,S)y followed by depositing just enough Cu+(Se,S) or Cux(Se,S) to produce the desired slightly Cu-poor material layer (18). In variation, most, but not all, (about 90 % to 99 %) of the (In,Ga)x(Se,S)y layer (20) is deposited first, followed by deposition of all the Cu+(Se,S) or Cux(Se,S) layer (22) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 % to 10 %) of the (In,Ga)x(Se,S)y layer (24) to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 % to 10 %) of the (In,Ga)x(Se,S)y is first deposited as a seed layer (26), followed by deposition of all of the Cu+(Se,S) or Cux(Se,S) to make a very Cu-rich mixture layer (28), and then followed deposition of the remainder of the (In,Ga)x(Se,S)y layer (30) to go slightly Cu-poor in the final Cu(In,Ga)(Se,S)2 thin film.
摘要翻译：用于制造Cu（In，Ga）（Se，S）2的略微Cu不良薄膜的方法包括沉积（In，Ga）x（Se，S）y的第一层（16），然后沉积刚好 Cu +（Se，S）或Cux（Se，S）以产生所需的稍微不良铜的材料层（18）。在变化中，首先沉积（In，Ga）x（Se，S）y层（20）的大部分但不是全部（约90％至99％），然后沉积所有Cu +（Se，S ）或Cux（Se，S）层（22）接近化学计量，可能甚至优选略微富Cu，然后依次沉积（In，Ga）的余量（约1％至10％））x（Se，S）y层（24）以稍微不合铜的组成结束。在另一变型中，首先将（In，Ga）x（Se，S）y的一小部分（约1％至10％）沉积为籽晶层（26），然后沉积所有Cu + Se，S）或Cux（Se，S），以形成非常富Cu的混合层（28），然后将剩余的（In，Ga）x（Se，S）y层（30）沉积到在最终的Cu（In，Ga）（Se，S）2薄膜中略微Cu-poor。

4. 发明申请

WO2012177804A3 IMPROVED CdTe DEVICES AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：WO2012177804A3
公开(公告)日：2012-12-27
申请号：PCT/US2012/043404
申请日：2012-06-20
申请人： ALLIANCE FOR SUSTAINABLE ENERGY, LLC , GESSERT, Timothy A. , NOUFI, Rommel , DHERE, Ramesh G. , ALBIN, David S. , BARNES, Teresa , BURST, James , DUENOW, Joel N. , REESE, Matthew
发明人： GESSERT, Timothy A. , NOUFI, Rommel , DHERE, Ramesh G. , ALBIN, David S. , BARNES, Teresa , BURST, James , DUENOW, Joel N. , REESE, Matthew
IPC分类号： H01L29/22 , C01B19/00
摘要： A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

5. 发明申请

WO2003007386A1 THIN-FILM SOLAR CELL FABRICATED ON A FLEXIBLE METALLIC SUBSTRATE 审中-公开
标题翻译：薄膜太阳能电池组合在柔性金属基底上
公开(公告)号：WO2003007386A1
公开(公告)日：2003-01-23
申请号：PCT/US2001/022192
申请日：2001-07-13
申请人： MIDWEST RESEARCH INSTITUTE , TUTTLE, John, R. , NOUFI, Rommel , HASOON, Falah, S.
发明人： TUTTLE, John, R. , NOUFI, Rommel , HASOON, Falah, S.
IPC分类号： H01L31/0336
CPC分类号： H01L31/0749 , H01L31/02008 , H01L31/0392 , H01L31/03928 , Y02E10/541 , Y02P70/521
摘要： A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).
摘要翻译：提供薄膜太阳能电池（10）。薄膜太阳能电池（10）包括具有第一表面和第二表面的柔性金属基底（12）。在柔性金属基板（12）的第一表面上沉积背金属接触层（16）。半导体吸收层（14）沉积在背面金属触点上。沉积在半导体吸收层（14）上的光活性膜形成异相结构和沉积在异质结结构上的栅极接触（24）。柔性金属基底（12）可由铝或不锈钢构成。此外，提供了构造太阳能电池的方法。该方法包括提供铝基板（12），在铝基板（12）上沉积半导体吸收层（14），并将铝基板（12）与半导体吸收层（14）绝缘，以抑制铝基板（12）和半导体吸收层（14）。

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