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1. 发明申请

WO2012143858A2 THIN-FILM PHOTOVOLTAIC DEVICE AND FABRICATION METHOD 审中-公开
标题翻译：薄膜光伏器件和制造方法
公开(公告)号：WO2012143858A2
公开(公告)日：2012-10-26
申请号：PCT/IB2012/051926
申请日：2012-04-17
申请人： FLISOM AG , EMPA , CHIRILA, Adrian , TIWARI, Ayodhya Nath , BLOESCH, Patrick , NISHIWAKI, Shiro , BREMAUD, David
发明人： CHIRILA, Adrian , TIWARI, Ayodhya Nath , BLOESCH, Patrick , NISHIWAKI, Shiro , BREMAUD, David
IPC分类号： H01L21/02
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02485 , H01L21/02491 , H01L21/02505 , H01L21/0251 , H01L21/02568 , H01L31/0322 , H01L31/03928 , Y02E10/541
摘要： A method to fabricate thin-film photovoltaic devices (100) comprising a photovoltaic Cu(In,Ga)Se 2 or equivalent ABC absorber layer (130), such as an ABC 2 layer, deposited onto a back-contact layer (120) characterized in that said method comprises at least five deposition steps, wherein the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A r /B r , in the third at a ratio A r /B r lower than the previous, in the fourth at a ratio A r /B r higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements. The resulting photovoltaic devices are characterized in that, starting from the light-exposed side, the absorber layer (130) of the photovoltaic devices (100) comprises a first region (501) of decreasing Ga / (Ga + In) ratio, followed by a second region (502) of increasing Ga / (Ga + In) ratio where over the light- exposed half side of the second region (502) the value of Ga / (Ga + In) increases by less than 0.15 and contains at least one hump.
摘要翻译：一种制造薄膜光伏器件（100）的方法，该薄膜光伏器件（100）包括沉积在背接触层（120）上的光伏Cu（In，Ga）Se2或等效的ABC吸收层（130），例如ABC2层，其特征在于所述方法包括至少五个沉积步骤，其中在一个或多个步骤中存在至少一个C元件的情况下，所述一对第三和第四步骤是顺序可重复的。在第一步骤中沉积至少一个B元素，其次是通过以沉积速率比Ar / Br沉积A和B元素，在第三步中以低于前述的比率Ar / Br沉积第四元素比率高于之前的Ar / Br，而在第五次沉积B元素中以达到总沉积元素的最终比例A / B。得到的光电器件的特征在于，从曝光侧开始，光电器件（100）的吸收层（130）包括Ga /（Ga + In）比率降低的第一区域（501），随后是增加Ga /（Ga + In）比率的第二区域（502），其中在第二区域（502）的光照曝光半侧上Ga /（Ga + In）的值增加小于0.15并且至少包含一个驼峰

2. 发明申请

WO2012143858A3 THIN-FILM PHOTOVOLTAIC DEVICE AND FABRICATION METHOD 审中-公开
标题翻译：薄膜光伏器件和制造方法
公开(公告)号：WO2012143858A3
公开(公告)日：2012-12-27
申请号：PCT/IB2012051926
申请日：2012-04-17
申请人： FLISOM AG , EMPA , CHIRILA ADRIAN , TIWARI AYODHYA NATH , BLOESCH PATRICK , NISHIWAKI SHIRO , BREMAUD DAVID
发明人： CHIRILA ADRIAN , TIWARI AYODHYA NATH , BLOESCH PATRICK , NISHIWAKI SHIRO , BREMAUD DAVID
IPC分类号： H01L21/02 , H01L21/36
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02485 , H01L21/02491 , H01L21/02505 , H01L21/0251 , H01L21/02568 , H01L31/0322 , H01L31/03928 , Y02E10/541
摘要： A method to fabricate thin-film photovoltaic devices (100) comprising a photovoltaic Cu(In,Ga)Se2 or equivalent ABC absorber layer (130), such as an ABC2 layer, deposited onto a back-contact layer (120) characterized in that said method comprises at least five deposition steps, wherein the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio Ar/Br, in the third at a ratio Ar/Br lower than the previous, in the fourth at a ratio Ar/Br higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements. The resulting photovoltaic devices are characterized in that, starting from the light-exposed side, the absorber layer (130) of the photovoltaic devices (100) comprises a first region (501) of decreasing Ga / (Ga + In) ratio, followed by a second region (502) of increasing Ga / (Ga + In) ratio where over the light- exposed half side of the second region (502) the value of Ga / (Ga + In) increases by less than 0.15 and contains at least one hump.
摘要翻译：一种用于制造沉积在背接触层（120）上的包括光伏Cu（In，Ga）Se 2或等同的ABC吸收层（130）例如ABC2层的薄膜光伏器件（100）的方法，其特征在于，所述方法包括至少五个沉积步骤，其中所述一对第三和第四步骤可以在一个或多个步骤中存在至少一种C元素的情况下顺序地重复。在第一步骤中，沉积至少一种B元素，接着第二次以沉积速率比率Ar / Br沉积A和B元素，第三次以比先前低的比例Ar / Br沉积第三次元素，比率比Ar / Br高，并且在第五次仅沉积B元素以实现总沉积元素的最终比例A / B。所得到的光伏器件的特征在于，从光暴露侧开始，光伏器件（100）的吸收层（130）包括Ga /（Ga + In）比率降低的第一区域（501），接着是在Ga /（Ga + In）的值增加小于0.15的第二区域（502）的曝光半侧上方增加Ga /（Ga + In）比率的第二区域（502）一个驼峰。

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