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1. 发明申请

WO2004053209A1 A TEMPLATE TYPE SUBSTRATE AND A METHOD OF PREPARING THE SAME 审中-公开
标题翻译：模板型基材及其制备方法
公开(公告)号：WO2004053209A1
公开(公告)日：2004-06-24
申请号：PCT/JP2003/015905
申请日：2003-12-11
申请人： AMMONO SP. Z O.O. , NICHIA CORPORATION , DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266
摘要： The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.
摘要翻译：模板型衬底用于光电或电器件，并且包括A）含有至少一种碱金属元素的块状单晶氮化物层（组I，IUPAC 1989）和B）通过手段生长的氮化物层的气相外延生长，其中层A）和层B）在层A）的非N极面和层B）的N-极性面组合。因此，模板型基板具有良好的位错密度和来自（0002）平面的X射线摇摆曲线的FWHM的良好值小于80，使得所得到的模板型基板对于来自气相的外延基板非常有用例如MOCVD，MBE和HVPE，从而产生诸如激光二极管和大输出LED以及诸如MOSFET的良好电气装置的良好光电装置的可能性。

2. 发明申请

WO2003035945A2 SUBSTRATE FOR EPITAXY 审中-公开
标题翻译： EPITAXY的基础
公开(公告)号：WO2003035945A2
公开(公告)日：2003-05-01
申请号：PCT/PL2002/000077
申请日：2002-10-25
申请人： AMMONO SP. ZO.O. , NICHIA CORPORATION , DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek, P. , KANBARA, Yasuo
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek, P. , KANBARA, Yasuo
IPC分类号： C30B
CPC分类号： C30B29/403 , C30B7/00 , C30B7/10 , C30B29/40 , C30B29/406 , H01S5/0281 , H01S5/32341
摘要： The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm 2 , it is more than 1,0 μm thick and its C-plane surface dislocation density is less than 10 6 /cm 2 , while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm 2 . More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm 2 , it is more 1,0 μm thick and its surface dislocation density is less than 10 6 /cm 2 . Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
摘要翻译：本发明涉及用于外延的衬底，特别是用于制备氮化物半导体层的衬底。本发明涵盖了一种块状氮化物单晶，其特征在于它是氮化镓的单晶，并且其在与氮化镓的六方晶格的c轴垂直的平面中的横截面具有大于100mm的表面积， 2时，其厚度大于1.0μm，并且其C平面表面位错密度小于10 6/2 / cm 2，而其体积为足以产生至少一个具有至少100mm 2表面积的可进一步加工的非极性A面或M面板。更一般地，本发明涵盖了一种块体氮化物单晶，其特征在于它是含镓氮化物的单晶，并且其在垂直于含镓氮化物的六方晶格的c轴的平面内的横截面表面积大于100mm 2，厚度大于1.0μm，表面位错密度小于10 6 / cm 2 2， SUP>。根据本发明的单晶适合于氮化物半导体层的外延生长。由于它们良好的结晶质量，它们适合用于光电子器件来制造基于氮化物的光电半导体器件，特别是用于制造半导体激光二极管和激光器件。含镓氮化物的a.m块体单晶在晶种上结晶。可以使用各种晶种。含镓氮化物的块体单晶通过这样的方法结晶，所述方法包括在超临界溶剂中溶解含镓原料并在比晶体表面上的晶种表面上晶化氮化镓更高和/或更低的温度解散过程。

3. 发明申请

WO2004053208A1 PROCESS FOR OBTAINING BULK-CRYSTALLINE GALLIUM-CONTAINING NITRIDE 审中-公开
标题翻译：用于获得大块含氮碳酸盐的方法
公开(公告)号：WO2004053208A1
公开(公告)日：2004-06-24
申请号：PCT/JP2003/015903
申请日：2003-12-11
申请人： AMMONO SP. Z O.O. , NICHIA CORPORATION , DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo
IPC分类号： C30B25/02
CPC分类号： C30B29/403 , C30B7/00 , C30B29/406
摘要： An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0≤x
摘要翻译：现在提出了一种用于获得通式为Al x Ga 1-x N的体积单晶含镓氮化物的方法的改进的矿化剂，其中在超临界含氨溶液的环境中0 <= x <1。根据本发明，所得产物的生长速度和质量可以通过适当选择矿化剂来控制，以确保I族元素（IUPAC 1989）的离子存在，优选钠与其它选自以下的组分的组合：第I组元素（IUPAC 1989），II族元素的离子（IUPAC 1989），一种或多种含有无氧物质的物质导致超临界溶剂的氨基性质的某些削弱，任选地与II族元素组合（IUPAC 1989），优选钙或镁。由此获得的改进的体积单晶主要用于光电子领域。

4. 发明申请

WO2002101120A2 PROCESS AND APPARATUS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE 审中-公开
标题翻译：用于获得大容量单晶含氮氮化物的方法和装置
公开(公告)号：WO2002101120A2
公开(公告)日：2002-12-19
申请号：PCT/IB2002/004185
申请日：2002-05-17
申请人： AMMONO LTD. , NICHIA CORPORATION , DWILINSKI, Robert, Tomasz , DORADZINSKI, Roman, Marek , SIERZPUTOWSKI, Leszek, Piotr , GARCZYNSKI, Jerzy , KANBARA, Yasuo
发明人： DWILINSKI, Robert, Tomasz , DORADZINSKI, Roman, Marek , SIERZPUTOWSKI, Leszek, Piotr , GARCZYNSKI, Jerzy , KANBARA, Yasuo
IPC分类号： C30B
CPC分类号： C30B29/406 , C30B7/00 , C30B7/10 , C30B29/403 , H01S5/0281 , H01S5/32341 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
摘要翻译：本发明涉及一种用于制备含镓氮化物晶体的氨基方法，其中在含超临界含氮溶剂中的含碱金属的组分存在下，含镓原料在至少一种结晶晶种上结晶。该方法可以提供具有非常高质量的单晶含镓氮化物晶体。

5. 发明专利

CA117009S LIGHT EMITTING DIODE BOARD 未知
公开(公告)号：CA117009S
公开(公告)日：2007-02-27
申请号：CA117009
申请日：2005-06-06
申请人： NICHIA CORPORATION
摘要： The design is the visual features of the LIGHT EMITTING DIODE BOARD shown in the drawings, whether those features are features of one of shape, configuration, ornament or pattern or are a combination of any of these features. The stippled lines show portions of the article, which do not form any part of the design.Drawings of the design are included in which:Figure 1 is a front side perspective view of a LIGHT EMITTING DIODE BOARD according to the present design;Figure 2 is a top plan view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 3 is a bottom plan view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 4 is a front elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 5 is a rear elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 6 is a right side elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1; andFigure 7 is a left side elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1.

6. 发明专利

CA111421S LIGHT EMITTING DIODE BOARD 未知
公开(公告)号：CA111421S
公开(公告)日：2007-02-27
申请号：CA111421
申请日：2005-06-06
申请人： NICHIA CORPORATION
摘要： The design is the visual features of the LIGHT EMITTING DIODE BOARD shown in the drawings, whether those features are features of one of shape, configuration, ornament or pattern or are a combination of any of these features. The stippled lines of Figures 1-8 show portions of the article, which do not form any part of the design. The additional stippled lines of Figure 8 show environment of the design for illustrative purposes only, which do not form any part of the design.Drawings of the design are included in which:Figure 1 is a front side perspective view of a LIGHT EMITTING DIODE BOARD according to the present design;Figure 2 is a top plan view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 3 is a bottom plan view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 4 is a front elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 5 is a rear elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 6 is a right side elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1;Figure 7 is a left side elevational view of the LIGHT EMITTING DIODE BOARD shown in Figure 1; andFigure 8 is a front side perspective view of a LIGHT EMITTING DIODE BOARD shown in Figure 1.

7. 发明申请

WO2004003261A1 PROCESS FOR OBTAINING OF BULK MONOCRYSTALLLINE GALLIUM-CONTAINING NITRIDE 审中-公开
标题翻译：获得大容量单层含氮硝酸盐的方法
公开(公告)号：WO2004003261A1
公开(公告)日：2004-01-08
申请号：PCT/PL2003/000040
申请日：2003-04-17
申请人： AMMONO Sp. z o.o. , NICHIA CORPORATION , DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek, P. , KANBARA, Yasuo
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek, P. , KANBARA, Yasuo
IPC分类号： C30B9/00
CPC分类号： C30B29/403 , C30B7/00 , C30B7/005 , C30B29/406
摘要： The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN 3 , NaN 3 , KN 3 , and CsN 3 .
摘要翻译：本发明涉及在超临界含氨溶液的环境中的晶体生长过程中的新改进，其基于使用特定的叠氮化物矿化剂，并且导致改进的体积组XIII族氮化物单晶，特别是碱性单晶含镓氮化物，主要用于各种氮化物基半导体产品，如各种光电器件。本发明还涉及一种用于超临界含氨溶液的矿化剂，其包含至少一种选自LiN 3，NaN 3，KN 3和CsN 3的化合物。

8. 发明申请

WO2002101120A3 PROCESS AND APPARATUS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE 审中-公开
公开(公告)号：WO2002101120A3
公开(公告)日：2002-12-19
申请号：PCT/IB2002/004185
申请日：2002-05-17
申请人： AMMONO SP. ZO.O , NICHIA CORPORATION , DWILINSKI, Robert, Tomasz , DORADZINSKI, Roman, Marek , SIERZPUTOWSKI, Leszek, Piotr , GARCZYNSKI, Jerzy , KANBARA, Yasuo
发明人： DWILINSKI, Robert, Tomasz , DORADZINSKI, Roman, Marek , SIERZPUTOWSKI, Leszek, Piotr , GARCZYNSKI, Jerzy , KANBARA, Yasuo
IPC分类号： C30B9/00
摘要： The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.

9. 发明申请

WO2019107320A1 METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
公开(公告)号：WO2019107320A1
公开(公告)日：2019-06-06
申请号：PCT/JP2018/043455
申请日：2018-11-26
申请人： NICHIA CORPORATION , IMRA AMERICA, INC.
发明人： YAMAMOTO Minoru , INOUE Naoto , TAMEMOTO Hiroaki , HOTTA Yoshitaka , OHTAKE Hideyuki
IPC分类号： H01L33/02 , H01L33/32
摘要： A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of a substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations.　Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

10. 发明申请

WO2016139954A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2016139954A1
公开(公告)日：2016-09-09
申请号：PCT/JP2016/001177
申请日：2016-03-03
申请人： NICHIA CORPORATION
发明人： YAMADA, Motokazu , OZAKI, Tomonori
IPC分类号： H01L33/56 , H01L33/50 , H01L33/58
CPC分类号： H01L33/56 , H01L33/50 , H01L33/502 , H01L2224/73204 , H01L2933/0091
摘要： The light emitting device comprising: a light-emitting element; a covering resin covering the light-emitting element; a wavelength converting material contained in the covering resin; and a light diffusing agent contained in the covering resin, wherein the light diffusing agent contains glass particles, a first refractive index n1 of the covering resin at a peak wavelength of the light-emitting element at 25 °C is in a range of 1.48 to 1.60, a second refractive index n2 of the covering resin at the peak wavelength at 100 °C is at least 0.0075 lower than the first refractive index n1, and a third refractive index n3 of the light diffusing agent at the peak wavelength of 25 °C is higher than the first refractive index n1.
摘要翻译：发光器件包括：发光元件; 覆盖发光元件的覆盖树脂; 包含在覆盖树脂中的波长转换材料; 和包含在覆盖树脂中的光漫射剂，其中光扩散剂含有玻璃颗粒，在25℃下发光元件的峰值波长处的覆盖树脂的第一折射率n1在1.48至 1.60时，覆盖树脂在100℃的峰值波长处的第二折射率n2比第一折射率n1低至少0.0075，在25℃的峰值波长处的光漫射剂的第三折射率n3 高于第一折射率n1。

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