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1. 发明申请

WO2011142850A2 ETCHANT-FREE METHODS OF PRODUCING A GAP BETWEEN TWO LAYERS, AND DEVICES PRODUCED THEREBY 审中-公开
标题翻译：无层免疫方法生产两层之间的差距，以及生产的设备
公开(公告)号：WO2011142850A2
公开(公告)日：2011-11-17
申请号：PCT/US2011022282
申请日：2011-01-24
申请人： UNIV CALIFORNIA , NGUYEN CLARK TU-CUONG , HUNG LI-WEN
发明人： NGUYEN CLARK TU-CUONG , HUNG LI-WEN
IPC分类号： B81C1/00 , B81B3/00 , H01L21/302
CPC分类号： H01H59/0009 , B81B3/0021 , B81B2201/0235 , B81B2203/0109 , B81B2203/0118 , B81C1/00182 , B81C1/00476 , B81C1/00484 , G01P15/0802 , G01P15/125
摘要： Etchant-free methods of producing a gap between two materials are provided. Aspects of the methods include providing a structure comprising a first material and a second material, and subjecting the structure to conditions sufficient to cause a decrease in the volume of at least a portion of at least one of the first material and the second material to produce a gap between the first material and the second material. Also provided are devices produced by the methods (e.g., MEMS and NEMS devices), structures used in the methods and methods of making such structures.
摘要翻译：提供了无腐蚀性的两种材料之间产生间隙的方法。方法的方面包括提供包括第一材料和第二材料的结构，并使结构经受足以引起第一材料和第二材料中的至少一种的至少一部分的体积减小的条件以产生第一材料和第二材料之间的间隙。还提供了通过方法（例如，MEMS和NEMS装置）制造的装置，用于制造这种结构的方法和方法中使用的结构。

2. 发明申请

WO2011142850A3 ETCHANT-FREE METHODS OF PRODUCING A GAP BETWEEN TWO LAYERS, AND DEVICES PRODUCED THEREBY 审中-公开
公开(公告)号：WO2011142850A3
公开(公告)日：2011-11-17
申请号：PCT/US2011/022282
申请日：2011-01-24
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , NGUYEN, Clark Tu-Cuong , HUNG, Li-Wen
发明人： NGUYEN, Clark Tu-Cuong , HUNG, Li-Wen
IPC分类号： B81C1/00 , B81B3/00 , H01L21/302
摘要： Etchant-free methods of producing a gap between two materials are provided. Aspects of the methods include providing a structure comprising a first material and a second material, and subjecting the structure to conditions sufficient to cause a decrease in the volume of at least a portion of at least one of the first material and the second material to produce a gap between the first material and the second material. Also provided are devices produced by the methods (e.g., MEMS and NEMS devices), structures used in the methods and methods of making such structures.

3. 发明申请

WO2009148677A3 MICROELECTROMECHANICAL SYSTEM (MEMS) RESONANT SWITCHES AND APPLICATIONS FOR POWER CONVERTERS AND AMPLIFIERS 审中-公开
标题翻译：微电子机电系统（MEMS）谐振开关和功率转换器和放大器的应用
公开(公告)号：WO2009148677A3
公开(公告)日：2010-02-25
申请号：PCT/US2009036852
申请日：2009-03-11
申请人： UNIV CALIFORNIA , NGUYEN CLARK TU-CUONG , LIN YANG , LI WEI-CHANG , KIM BONGSANG
发明人： NGUYEN CLARK TU-CUONG , LIN YANG , LI WEI-CHANG , KIM BONGSANG
IPC分类号： H01H59/00
CPC分类号： H01P1/127 , H01H1/0036 , H01H50/005
摘要： A modally driven oscillating element periodically contacts one of more electrical contacts, thereby acting as a switch, otherwise known as a resonant switch, or "resoswitch", with very high Q's, typically above 10000 in air, and higher in vacuum. Due to periodic constrained contacting of the contacts, the bandwidth of the switch is greatly improved. One or more oscillating elements may be vibrationally interconnected with conductive or nonconductive coupling elements, whereby increased bandwidths of such an overall switching system may be achieved. Using the resoswitch, power amplifiers and converters more closely approaching ideal may be implemented. Integrated circuit fabrication techniques may construct the resoswitch with other integrated CMOS elements for highly compact switching devices. Through introduction of specific geometries within the oscillating elements, displacement gains may be made where modal deflections are greatly increased, thereby reducing device drive voltages to 2.5 V or lower.
摘要翻译：模态驱动的振荡元件周期性地接触一个更多的电触点，从而起到开关的作用，否则称为谐振开关或“重启开关”，具有非常高的Q值，在空气中通常高于10000，而在真空中更高。由于触点的周期性约束接触，开关的带宽大大提高。一个或多个振荡元件可以与导电或非导电耦合元件振动地互连，由此可以实现这种整体开关系统的增加的带宽。可以实现使用resoswitch，功率放大器和更接近理想的转换器。集成电路制造技术可以使用其他集成CMOS元件构建重新开关，用于高度紧凑的开关器件。通过在振荡元件中引入特定的几何形状，可以在模态偏转大大增加的情况下进行位移增益，从而将器件驱动电压降低到2.5V或更低。

4. 发明申请

WO2009148677A2 MICROELECTROMECHANICAL SYSTEM (MEMS) RESONANT SWITCHES AND APPLICATIONS FOR POWER CONVERTERS AND AMPLIFIERS 审中-公开
标题翻译：微电子机电系统（MEMS）谐振开关和功率转换器和放大器的应用
公开(公告)号：WO2009148677A2
公开(公告)日：2009-12-10
申请号：PCT/US2009/036852
申请日：2009-03-11
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , NGUYEN, Clark, Tu-Cuong , LIN, Yang , LI, Wei-Chang , KIM, Bongsang
发明人： NGUYEN, Clark, Tu-Cuong , LIN, Yang , LI, Wei-Chang , KIM, Bongsang
IPC分类号： H01H59/00
CPC分类号： H01P1/127 , H01H1/0036 , H01H50/005
摘要： A modally driven oscillating element periodically contacts one of more electrical contacts, thereby acting as a switch, otherwise known as a resonant switch, or "resoswitch", with very high Q's, typically above 10000 in air, and higher in vacuum. Due to periodic constrained contacting of the contacts, the bandwidth of the switch is greatly improved. One or more oscillating elements may be vibrationally interconnected with conductive or nonconductive coupling elements, whereby increased bandwidths of such an overall switching system may be achieved. Using the resoswitch, power amplifiers and converters more closely approaching ideal may be implemented. Integrated circuit fabrication techniques may construct the resoswitch with other integrated CMOS elements for highly compact switching devices. Through introduction of specific geometries within the oscillating elements, displacement gains may be made where modal deflections are greatly increased, thereby reducing device drive voltages to 2.5 V or lower.
摘要翻译：模态驱动的振荡元件周期性地接触一个更多的电触点，从而起到开关的作用，否则称为谐振开关或“重启开关”，具有非常高的Q值，在空气中通常高于10000，而在真空中更高。由于触点的周期性约束接触，开关的带宽大大提高。一个或多个振荡元件可以与导电或非导电耦合元件振动地互连，由此可以实现这种整体开关系统的增加的带宽。可以实现使用resoswitch，功率放大器和更接近理想的转换器。集成电路制造技术可以使用其他集成CMOS元件构建重新开关，用于高度紧凑的开关器件。通过在振荡元件中引入特定的几何形状，可以在模态偏转大大增加的情况下进行位移增益，从而将器件驱动电压降低到2.5V或更低。

5. 发明申请

WO2009097167A2 PARTIALLY-FILLED ELECTRODE-TO-RESONATOR GAP 审中-公开
标题翻译：部分填充电极 - 谐振器间隙
公开(公告)号：WO2009097167A2
公开(公告)日：2009-08-06
申请号：PCT/US2009030148
申请日：2009-01-05
申请人： UNIV CALIFORNIA , NGUYEN CLARK TU-CUONG , HUNG LI-WEN
发明人： NGUYEN CLARK TU-CUONG , HUNG LI-WEN
CPC分类号： H03H9/2436 , H03H2009/02503
摘要： Method and apparatus for lowering capacitively-transduced resonator impedance within micromechanical resonator devices. Fabrication limits exist on how small the gap spacing can be made between a resonator and the associated input and output electrodes in response to etching processes. The present invention teaches a resonator device in which these gaps are then fully, or more preferably partially filled with a dielectric material to reduce the gap distance. A reduction of the gap distance substantially lowers the motional resistance of the micromechanical resonator device and thus the capacitively-transduced resonator impedance. Micromechanical resonator devices according to the invention can be utilized in a wide range of UHF devices, including integration within ultra-stable oscillators, RF filtering devices, radar systems, and communication systems.
摘要翻译：用于降低微机械谐振器装置内的电容性转换的谐振器阻抗的方法和装置。对于响应于蚀刻工艺的谐振器和相关的输入和输出电极之间的间隙间隔可以有多小而存在制造限制。本发明教导了一种谐振器装置，其中这些间隙然后完全或者更优选地部分地填充有介电材料以减小间隙距离。间隙距离的减小实质上降低了微机械谐振器装置的运动阻力，并由此降低了电容转换的谐振器阻抗。根据本发明的微机械谐振器装置可用于各种UHF装置中，包括集成在超稳定振荡器，RF滤波装置，雷达系统和通信系统内。

6. 发明申请

WO2009097167A3 PARTIALLY-FILLED ELECTRODE-TO-RESONATOR GAP 审中-公开
公开(公告)号：WO2009097167A3
公开(公告)日：2009-08-06
申请号：PCT/US2009/030148
申请日：2009-01-05
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , NGUYEN, Clark, Tu-Cuong , HUNG, Li-Wen
发明人： NGUYEN, Clark, Tu-Cuong , HUNG, Li-Wen
IPC分类号： H03H3/02 , H03H9/02
摘要： Method and apparatus for lowering capacitively-transduced resonator impedance within micromechanical resonator devices. Fabrication limits exist on how small the gap spacing can be made between a resonator and the associated input and output electrodes in response to etching processes. The present invention teaches a resonator device in which these gaps are then fully, or more preferably partially filled with a dielectric material to reduce the gap distance. A reduction of the gap distance substantially lowers the motional resistance of the micromechanical resonator device and thus the capacitively-transduced resonator impedance. Micromechanical resonator devices according to the invention can be utilized in a wide range of UHF devices, including integration within ultra-stable oscillators, RF filtering devices, radar systems, and communication systems.

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