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1. 发明专利

JPH1158227A SURFACE GRINDING DEVICE AND METHOD THEREOF 失效
公开(公告)号：JPH1158227A
公开(公告)日：1999-03-02
申请号：JP22527497
申请日：1997-08-21
申请人： SHINETSU HANDOTAI KK , NAOETSU DENSHI KOGYO KK , NAGANO ELECTRONICS IND
发明人： OKUNI YOSHIYUKI , OSHIMA HISASHI , OKABE KEIICHI , KATO TADAHIRO
IPC分类号： B24B49/02
摘要： PROBLEM TO BE SOLVED: To make highly accurate grinding performable without being affected by a variation in the grinding load of a holding table and a workpiece by setting up a detector for detecting the relative displacement of a wheel spindle and a holding table turning shaft, detecting the displacement, and controlling it to the specified value. SOLUTION: A minute displacement gauge 48 to detect the displacement of a wheel spindle 34 is set up in the side wall of a wheel spindle driving motor 42. This minute displacement gauge 48 detects any displacement in the wheel spindle 34 due to a variation in space between the driving motor 42 and a column 28 when this wheel spindle 34 is displaced. An air cylinder 52 has a piston rod 54 being projected downward, and with this piston rod loaded, any displacement in the wheel spindle 34 is controlled. During grinding operations on a workpiece 16, the displacement detected by the minute displacement gauge 48 like this, is inputted into a comparative operating computer 56. Then, the input information and the stored displacement of the workpiece table 18 at time of grinding are comparatively operated, thereby controlling the extent of pressure to be added to the air cylinder 52.

2. 发明专利

JPH1110538A DRESSING METHOD FOR INNER PERIPHERAL BLADE IN SEMICONDUCTOR WAFER CUTTING DEVICE 失效
公开(公告)号：JPH1110538A
公开(公告)日：1999-01-19
申请号：JP15970897
申请日：1997-06-17
申请人： NAOETSU DENSHI KOGYO KK
发明人： SATO SHIGEKI , SATO TSUTOMU
IPC分类号： B24B53/00
摘要： PROBLEM TO BE SOLVED: To establich a method to dress an inner peripheral blade in a wafer cutting device and capable of dressing without requiring a special holding mechanism to carry out dressing and accordingly without suspending wafer cutting. SOLUTION: A reinforced part 2 of thermosetting resin provided on an outer peripheral edge of a wafer 1 is formed by crushing a grindstone formed by baking a resin or glassy binder by abrasive grains of the number selected from grain sizes #320-#800 in less than 0.8 mm in the maximum diameter and mixing 4%-20% of it in volume, and an inner peripheral blade is devised to be dressed for each cutting by cutting the formed reinforced part with cutting of the wafer 1.

3. 发明专利

JP2832184B2 失效
公开(公告)号：JP2832184B2
公开(公告)日：1998-12-02
申请号：JP20946996
申请日：1996-08-08
申请人： NAOETSU DENSHI KOGYO KK
发明人： OOSHIMA HISASHI , SATO TSUTOMU
IPC分类号： B24B7/22 , B24B37/04 , B28D5/02 , H01L21/02 , H01L21/304 , H01L21/306

4. 发明专利

JPH1055988A MANUFACTURING METHOD OF SILICON SEMICONDUCTOR WAFER FOR DISCRETE USE 失效
公开(公告)号：JPH1055988A
公开(公告)日：1998-02-24
申请号：JP20946996
申请日：1996-08-08
申请人： NAOETSU DENSHI KOGYO KK
发明人： OSHIMA HISASHI , SATO TSUTOMU
IPC分类号： B24B7/22 , B24B37/04 , B28D5/02 , H01L21/02 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To obtain a method of manufacturing a silicon semiconductor wafer for discrete use, which is good in finishing accuracy and is good in productivity. SOLUTION: A silicon semiconductor wafer for discrete use consisting of a two-layer structure, which has an impurity diffused layer in one side of the wafer and has an impurity undiffused layer in the opposite side to the one side, is manufactured by such a method that the diffused wafer with the impurity diffused layers formed in both surfaces of the silicon semiconductor wafer or the diffused wafer with oxide films, which are respectively formed on the surfaces of the diffused layers, is cut into two divisions from the center of the thickness of the wafer by an inner periphery blade type cutting unit. A grinding work is performed on both cut sides of the diffused wafer to a desired thickness by a plane grinding machine. A lapping work is performed on the ground surfaces of both cut sides with adhesive grains of No.2000 to No.6000, and a wet etching is performed to the lapped surfaces to finish them into the silicon semiconductor wafer for discrete use.

5. 发明专利

JPH07193029A MANUFACTURE OF WAFER 失效
公开(公告)号：JPH07193029A
公开(公告)日：1995-07-28
申请号：JP33192593
申请日：1993-12-27
申请人： NAOETSU DENSHI KOGYO KK
发明人： KIMURA YUICHI
IPC分类号： H01L21/304
摘要： PURPOSE:To improve the accuracy of slicing by a method wherein the outer circumference of an ingot formed in a desired shape is recessed, the surface of the ingot is formed in an irregular shape, the whole region of the irregular surface is etched or brushed and chambered and machined, and slicing is conducted at the position of the chamfered and machined recessed surface. CONSTITUTION:Grooves 3..., which are not continued mutually, the notched periodically to the outer circumference of an ingot I in an approximately V-shaped cross section by using a specified jig. The outer circumference is formed in an irregular surface 2 consisting of the approxmately V-shaped sectional grooves 3... and approximately trapezoidal sectional projecting surfaces 4.... The irregular surface 2 of the formed ingot l is surface-treated-that is, it is etched or brushed-and chamfered and machined. The ingot l is sliced extending over sections among opposed recessed surfaces 5, 5 by a cutter at the positions of each recessed surface 5..., thus forming wafers 7.

6. 发明专利

JPH06298539A BONDING OF GLASS MATERIAL 失效
公开(公告)号：JPH06298539A
公开(公告)日：1994-10-25
申请号：JP8331793
申请日：1993-04-09
申请人： NAOETSU DENSHI KOGYO KK
发明人： KOIDE MASAHIKO
IPC分类号： C03B23/20 , C03C27/00
摘要： PURPOSE:To provide a method for adhesively bonding glass materials with each other without using an adhesive material and to realize the bonding of glass materials without lowering the transparency. CONSTITUTION:The bonding faces of glass materials are mirror-polished and washed with cleaning water. The wet glass materials are closely contacted with each other, dried at 40-90 deg.C, preheated at 100-150 deg.C and heat-treated at >=400 deg.C.

7. 发明专利

JPH06163502A METHOD OF MANUFACTURING ULTRAPURE WATER 失效
公开(公告)号：JPH06163502A
公开(公告)日：1994-06-10
申请号：JP31846492
申请日：1992-11-27
申请人： NAOETSU DENSHI KOGYO KK
发明人： KOSUGI AKIRA , KOBAYASHI SHOICHI
IPC分类号： C02F1/28 , H01L21/304
摘要： PURPOSE:To produce ultrapure water by bringing water into contact with metallic silicon and removing the metallic ions and colloidal metallic components present in the water by making them adhere to the surface of the metallic silicon. CONSTITUTION:The primary pure water sent forcedly by a pump 1 passes through a UV bacteria killer 2 and enters an ion exchanger resin 3 whereby the heavy metals contained in the primary pure water are removed by adsorption. The water coming from the ion exchange resin container 3 enters the column 4 and comes into contact with the metallic silicon 5 packed in this column 4. Because of this, very small amounts of heavy metal ions and colloidal heavy metal particles still remaining are removed by the a clsorption by the cleaning surface of the metallic silicon 5. After this, the water coming from the column 4 passes through the UF film 6. In this manner, particles of a specific molecular weight or more are removed from the water thereby producing ultrapure water.

8. 发明专利

JPH06112146A MANUFACTURE OF DIFFUSION TYPE SILICON ELEMENT SUBSTRATE 失效
公开(公告)号：JPH06112146A
公开(公告)日：1994-04-22
申请号：JP25451092
申请日：1992-09-24
申请人： SHINETSU HANDOTAI KK , NAOETSU DENSHI KOGYO KK
发明人： YOSHIMURA YASUSHI , AKATSUKA TAKESHI , OKADA JUNICHI
IPC分类号： H01L21/22 , H01L21/225 , H01L21/322 , H01L29/78 , H01L29/784
摘要： PURPOSE:To obtain the diffusion type silicon element substrate, which can be used for manufacturing a MOS-based power element. CONSTITUTION:In the manufacturing method of a diffusion type silicon element substrate used for manufacturing a MOS-based power element, a thermal-donor forming heat treatment is performed for 1-20 hours at 400-500 deg.C following a drive-in processing of a diffusion step. Then, a thermal-donor suppressing heat treatment is performed for 8-24 hours at 600-650 deg.C. The heat treatments are performed in atmospheric gas containing oxygen gas, respectively.

9. 发明专利

JPH0583174B2 失效
公开(公告)号：JPH0583174B2
公开(公告)日：1993-11-25
申请号：JP16921289
申请日：1989-06-30
申请人： NAOETSU DENSHI KOGYO KK
发明人： SATO TSUTOMU , KIMURA JUICHI
IPC分类号： H01L21/304 , H01L21/301 , H01L21/78

10. 发明专利

JPH0590233A REINFORCING METHOD, DEVICE AND MEMBER FOR OUTER PERIPHERY OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH0590233A
公开(公告)日：1993-04-09
申请号：JP25187591
申请日：1991-09-30
申请人： NAOETSU DENSHI KOGYO KK
发明人： SATO TSUTOMU , KAZAMA MIKIO
IPC分类号： H01L21/02 , H01L21/304
摘要： PURPOSE:To continuously fit a reinforcing member to every semiconductor wafer precisely and efficiently. CONSTITUTION:In order to avoid the damage, etc., to the outer periphery of semiconductor wafers W when the semiconductor wafers W having impurity diffused layers on both surfaces and an impurity non-diffused layer in the central part of the thickness width are sliced up into two sections by an inner peripheral slicer, reinforcing members P separately formed near the slicing ends of the outer periphery of the semiconductor wafers W are bond-fixed using a bonding agent. Next, one each of reinforcing member P coated with the bonding agent formed in an arc length not exceeding half of the outer periphery of the semiconductor wafer W is bonded onto one each of semiconductor wafer W in a vertical surface and then the semiconductor wafer W on the lower side of the vertical surface and the reinforcing member P on the upper side of the vertical surface are successively processed.

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