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1. 发明申请

WO1998006776A1 POLYPROPYLENE FILM AND CAPACITOR MADE BY USING THE SAME AS THE DIELECTRIC 审中-公开
标题翻译：使用它作为介质的聚丙烯膜和电容器
公开(公告)号：WO1998006776A1
公开(公告)日：1998-02-19
申请号：PCT/JP1997002791
申请日：1997-08-08
申请人： TORAY INDUSTRIES, INC. , UEDA, Takashi , NAGAI, Itsuo , TANAKA, Shigeru , HIRANO, Takumi
发明人： TORAY INDUSTRIES, INC.
IPC分类号： C08J05/18
CPC分类号： C08J5/18 , C08J2323/12 , H01G4/18
摘要： A biaxially oriented polypropylene film which is excellent in heat resistance and long-term breakdown resistance at high temperature, little suffers from insulation defect, and has an advantage in that when pieces of the film are immersed in an insulating oil, the oil can well penetrate in between the pieces and the pieces are little swollen with the oil; and a capacitor made by using the film as the dielectric and excellent in heat resistance, breakdown resistance, corona resistance, long-term serviceability at high temperature, and current resistance. The film is a biaxially oriented polypropylene film characterized in that the isotacticity, isotactic pentad fraction and ash content are 98 to 99.5 %, 99 % or above and 30 ppm or below, respectively, and that the center-line average roughness of each surface is 0.01 to 0.4 mu m.
摘要翻译：一种双轴取向聚丙烯薄膜，其耐热性和耐高温性能的耐久性极好，几乎没有绝缘缺陷，并且具有如下优点：当薄片浸入绝缘油中时，油可以很好地渗透在碎片和碎片之间很少肿胀的油; 以及通过使用该膜作为电介质而制成的电容器，耐热性，耐击穿性，电晕电阻，高温下的长期使用性以及电流电阻优异。该膜是双轴取向聚丙烯膜，其特征在于全同立构规整度，全同立构五单元组分和灰分分别为98〜99.5％，99％以上，30ppm以下，各面的中心线平均粗糙度为 0.01〜0.4μm。

2. 发明专利

JPH02111695A PRODUCTION OF DIAMOND CARBON THIN FILM 失效
公开(公告)号：JPH02111695A
公开(公告)日：1990-04-24
申请号：JP26504888
申请日：1988-10-20
申请人： JAPAN RES DEV CORP , NAGAI ITSUO , ISHITANI KEI
发明人： NAGAI ITSUO , ISHITANI KEI
IPC分类号： C30B29/04
摘要： PURPOSE:To simply obtain the title high-purity thin film by applying a bias, through a specific system, between an ECR ion source-including cavity and a substrate to introduce a carbon-contg. material into a vacuum chamber and by generating electronic cyclotron resonance plasma. CONSTITUTION:Using an ion source (cavity 1) of electronic cyclotron resonance system electrically insulated via an insulator 2 against a vacuum chamber 3, the voltage of the resonance cavity of this ion source is set at +150V relative to that of a substrate 8 set up against the opening 7 of said ion source to introduce a carbon-contg. material gas 13 into the vacuum chamber 3, and an electronic cyclotron resonance plasma is generated (ionic beams 17 drawn from the ECR cavity 1 are irradiated on the substrate 8) to effect film formation on the substrate 8.

3. 发明专利

JPH028381A METHOD FOR CLEANING SURFACE OF SOLID SILICON 失效
公开(公告)号：JPH028381A
公开(公告)日：1990-01-11
申请号：JP31682187
申请日：1987-12-15
申请人： JAPAN RES DEV CORP , NAGAI ITSUO , ISHITANI HIKARI
发明人： NAGAI ITSUO , ISHITANI HIKARI
IPC分类号： C23G5/00 , C23F4/00 , H01L21/263 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To effectively clean the surface of solid silicon by irradiating the surface of solid silicon regulated to ground potential with the ions of rare gas generated from an electron cyclotron resonance cavity impressed with positive potential in a vacuum vessel introduced with rare gas. CONSTITUTION:Solid silicon 4 which has been contaminated by SiO2, surface segregation of the impurities and organic substance, etc., and has a form of single crystal, polycrystal and amorphous substance is arranged in a vacuum vessel 14 and rare gas such as He, Ar and Ne is introduced into the vacuum vessel 14. A magnetic field is generated with a magnet 10 provided to the outer periphery of an electron cyclotron resonance(ECR) cavity 9 which is partitioned from the vacuum vessel 14 by an insulating ring 3 and microwave is introduced into the cavity 9 through a waveguide 8 from a microwave power source 7 and the cavity 9 is impressed with bias voltage by a DC power source 12 and also solid silicon 4 is regulated to ground potential. The surface thereof is irradiated by the ion beam 11 of rare gas to remove oxide, the impurities and organic substance, etc., on the surface of solid silicon 4 and thereby this surface thereof is effectively cleaned.

4. 发明专利

JPH0521875B2 失效
公开(公告)号：JPH0521875B2
公开(公告)日：1993-03-25
申请号：JP26504888
申请日：1988-10-20
申请人： SHINGIJUTSU JIGYODAN , NAGAI ITSUO , ISHITANI KEI
发明人： NAGAI ITSUO , ISHITANI KEI
IPC分类号： C30B29/04

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