专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120094421A1 METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120094421A1
公开(公告)日：2012-04-19
申请号：US13227321
申请日：2011-09-07
申请人： Myung Su KIM , Dongseop Kim , Sungchan Park , Juhee Song
发明人： Myung Su KIM , Dongseop Kim , Sungchan Park , Juhee Song
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： In a method of manufacturing a solar cell, an emitter layer is formed on a front surface of a substrate, a rear surface protective layer is formed on the emitter layer, and a plurality of recesses is formed in the rear surface protective layer. Then, a front electrode is formed on the emitter layer, and a rear surface electrode layer is formed on the rear surface protective layer. A substrate is heated to form a rear surface electric field layer. Since a portion of the rear surface protective layer is removed when the recesses are formed, the substrate may be prevented from being damaged, and thus photoelectric conversion efficiency of the solar cell may be improved.
摘要翻译：在太阳能电池的制造方法中，在基板的正面形成有发射极层，在发射极层上形成有后表面保护层，在背面保护层上形成有多个凹部。然后，在发射极层上形成前电极，在背面保护层上形成背面电极层。将基板加热以形成背面电场层。由于在形成凹部时去除了后表面保护层的一部分，所以可以防止基板的损坏，从而可以提高太阳能电池的光电转换效率。

2. 发明授权

US08605505B2 Semiconductor integrated circuit and data read method 有权
标题翻译：半导体集成电路和数据读取方法
公开(公告)号：US08605505B2
公开(公告)日：2013-12-10
申请号：US13333158
申请日：2011-12-21
申请人： Myung Su Kim
发明人： Myung Su Kim
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C16/10 , G11C16/3454
摘要： A semiconductor integrated circuit includes a memory cell area comprising a main cell and a spare cell, and a memory controller configured to set an offset value using a program verify level which is set during a program operation, and set a read level using the offset value during a read operation.
摘要翻译：半导体集成电路包括：包括主单元和备用单元的存储单元区域;以及存储器控制器，其被配置为使用在编程操作期间设置的程序验证电平来设置偏移值，并且使用偏移值设置读取电平在读操作期间。

3. 发明申请

US20120149144A1 METHOD FOR MANUFACTURING SOLAR CELL 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120149144A1
公开(公告)日：2012-06-14
申请号：US13276044
申请日：2011-10-18
申请人： Myung-Su KIM , Min-Chul Song , Soon-Young Park , Dong-Seop Kim , Sung Chan Park , Yoon-Mook Kang , Tae-Jun Kim , Min-Ki Shin , Sang-Won Lee , Heung-Kyoon Lim
发明人： Myung-Su KIM , Min-Chul Song , Soon-Young Park , Dong-Seop Kim , Sung Chan Park , Yoon-Mook Kang , Tae-Jun Kim , Min-Ki Shin , Sang-Won Lee , Heung-Kyoon Lim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.
摘要翻译：提出了一种制造太阳能电池的方法。该方法包括：在光吸收层的第一表面上形成非晶硅层; 用掺杂剂掺杂非晶硅层; 通过用激光将掺杂剂扩散到非晶硅层中形成掺杂剂层; 通过去除保留在掺杂剂层外部的掺杂剂形成半导体层; 通过使用蚀刻剂蚀刻半导体层的表面; 在所述半导体层上形成第一电极; 以及在所述光吸收层的第二表面上形成第二电极。

4. 发明授权

US08623692B2 Method for manufacturing solar cell including etching 有权
标题翻译：包括蚀刻的太阳能电池的制造方法
公开(公告)号：US08623692B2
公开(公告)日：2014-01-07
申请号：US13276044
申请日：2011-10-18
申请人： Myung Su Kim , Min Chul Song , Soon Young Park , Dong Seop Kim , Sung Chan Park , Yoon Mook Kang , Tae Jun Kim , Min Ki Shin , Sang Won Lee , Heung Kyoon Lim
发明人： Myung Su Kim , Min Chul Song , Soon Young Park , Dong Seop Kim , Sung Chan Park , Yoon Mook Kang , Tae Jun Kim , Min Ki Shin , Sang Won Lee , Heung Kyoon Lim
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.
摘要翻译：提出了一种制造太阳能电池的方法。该方法包括：在光吸收层的第一表面上形成非晶硅层; 用掺杂剂掺杂非晶硅层; 通过用激光将掺杂剂扩散到非晶硅层中形成掺杂剂层; 通过去除保留在掺杂剂层外部的掺杂剂形成半导体层; 通过使用蚀刻剂蚀刻半导体层的表面; 在所述半导体层上形成第一电极; 以及在所述光吸收层的第二表面上形成第二电极。

5. 发明申请

US20120250410A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND DATA READ METHOD 有权
标题翻译：半导体集成电路和数据读取方法
公开(公告)号：US20120250410A1
公开(公告)日：2012-10-04
申请号：US13333158
申请日：2011-12-21
申请人： Myung Su KIM
发明人： Myung Su KIM
IPC分类号： G11C16/10 , G11C16/06
CPC分类号： G11C16/26 , G11C16/10 , G11C16/3454
摘要： A semiconductor integrated circuit includes a memory cell area comprising a main cell and a spare cell, and a memory controller configured to set an offset value using a program verify level which is set during a program operation, and set a read level using the offset value during a read operation.
摘要翻译：半导体集成电路包括：包括主单元和备用单元的存储单元区域;以及存储器控制器，其被配置为使用在编程操作期间设置的程序验证电平来设置偏移值，并且使用偏移值设置读取电平在读操作期间。

6. 发明申请

US20100302826A1 CAM CELL CIRCUIT OF NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：非易失性存储器件的CAM单元电路及其驱动方法
公开(公告)号：US20100302826A1
公开(公告)日：2010-12-02
申请号：US12650689
申请日：2009-12-31
申请人： Myung Su KIM
发明人： Myung Su KIM
IPC分类号： G11C15/00 , G11C7/10
CPC分类号： G11C15/046 , G11C15/00
摘要： A Code Address Memory (CAM) cell circuit of a nonvolatile memory device includes a CAM cell unit configured to store data, a control circuit unit configured to read data stored in the CAM cell unit and to output data read as read data, and register units each configured to comprise a number of registers for storing the read data. Each of the registers is reset such that first data are latched when a reset operation is performed, and is configured to maintain the first data or newly latch second data in response to the read data.
摘要翻译：非易失性存储器件的代码地址存储器（CAM）单元电路包括被配置为存储数据的CAM单元单元，控制电路单元，被配置为读取存储在CAM单元单元中的数据，并输出读取为读取数据的数据，以及寄存器单元每个被配置为包括用于存储读取的数据的多个寄存器。每个寄存器被复位，使得当执行复位操作时锁存第一数据，并且被配置为响应于读取的数据来维持第一数据或新锁存第二数据。

7. 发明申请

US20120295391A1 METHOD OF MANUFACTURING A SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120295391A1
公开(公告)日：2012-11-22
申请号：US13309870
申请日：2011-12-02
申请人： Yoon-Mook KANG , Min-Chul Song , Tae-Jun Kim , Min-Sung Kim , Min-Ki Shin , Myung-Su Kim , Myeong-Woo Kim , Sang-Won Lee , Soon-Young Park , Heung-Kyoon Lim
发明人： Yoon-Mook KANG , Min-Chul Song , Tae-Jun Kim , Min-Sung Kim , Min-Ki Shin , Myung-Su Kim , Myeong-Woo Kim , Sang-Won Lee , Soon-Young Park , Heung-Kyoon Lim
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.
摘要翻译：一种制造太阳能电池的方法包括制备具有第一导电类型的基底基板; 将具有第二导电类型（与第一导电类型相反）的杂质扩散到基底衬底中，以在基底衬底上形成具有第一杂质浓度的发射极层和发射极层上的副产物层; 将激光束照射到与基底基板的第一区域对应的发射极层上，以形成具有高于第一杂质浓度的第二杂质浓度的前接触部分; 将激光束照射到副产物层上以去除对应于第一区域的副产物层; 从第一区域外的区域除去副产物层; 在基底基板上形成防反射层; 在对应于第一区域的防反射层上形成前电极; 以及在基底基板上形成背电极。

8. 发明授权

US08275934B2 Nonvolatile memory device and cache read method using the same 有权
标题翻译：非易失性存储器件和缓存读取方法使用相同
公开(公告)号：US08275934B2
公开(公告)日：2012-09-25
申请号：US12646652
申请日：2009-12-23
申请人： Myung Su Kim
发明人： Myung Su Kim
IPC分类号： G06F12/00
CPC分类号： G06F12/0868 , G06F2212/214 , G06F2212/601 , G11C16/26
摘要： A nonvolatile memory device includes first and second registers configured to store parameters received via an input/output (IO) unit, a microcontroller configured to control an operation of the nonvolatile memory device according to the parameter stored in the first register, and a control logic unit configured to, when a parameter is received via the IO unit while the microcontroller performs an internal operation, store the received parameter in the second register.
摘要翻译：非易失性存储器件包括配置成存储经由输入/输出（IO）单元接收的参数的第一和第二寄存器，被配置为根据存储在第一寄存器中的参数来控制非易失性存储器件的操作的微控制器，以及控制逻辑单元被配置为当在微控制器执行内部操作时经由IO单元接收到参数时，将所接收的参数存储在第二寄存器中。

9. 发明授权

US06677057B2 Zn-Co-W alloy electroplated steel sheet with excellent corrosion resistance and weldability, and electrolyte for plating same 失效
标题翻译：具有优异的耐腐蚀性和焊接性的Zn-Co-W合金电镀钢板和用于电镀的电解质
公开(公告)号：US06677057B2
公开(公告)日：2004-01-13
申请号：US10204512
申请日：2002-08-21
申请人： Myung-Su Kim
发明人： Myung-Su Kim
IPC分类号： C25D322
CPC分类号： C25D3/565 , Y10S428/935 , Y10T428/12799 , Y10T428/1284
摘要： A Zn—Co—W alloy electroplated steel sheet with excellent corrosion resistance and weldability, and an electrolyte for manufacturing same are provided. The plating layer consisting of Co: 0.1-3.0 wt %, and zinc: balance, is formed on the steel sheet and all tungsten plating is carried out with metallic tungsten; an electrolyte for manufacturing a Zn—Co—W alloy electroplated steel sheet, comprising zinc chloride: 60-200 g/l, cobalt chloride: 0.1-6.0 g/l, tungsten: 0.1-4.0 g/l, citric acid: 0.5-10.0 g/l, polyethylene glycol: 0.1-2.0 m/l and electric conductive aid: 30-400 g/l, wherein substantially all of the tungsten ions form a complex compound with citric acid, thereby preventing formation of sludge; and a Zn—Co—W alloy electroplated steel sheet, on which a plating layer is formed by electroplating the steel in the electrolyte.
摘要翻译：提供具有优异的耐腐蚀性和焊接性的Zn-Co-W合金电镀钢板及其制造用电解液。在钢板上形成由Co：0.1-3.0重量％和锌平衡的组成的镀层，并用金属钨进行所有的钨镀层; 一种用于制造Zn-Co-W合金电镀钢板的电解质，包括氯化锌：60-200g / l，氯化钴：0.1-6.0g / l，钨：0.1-4.0g / l，柠檬酸： 10.0g / l，聚乙二醇：0.1-2.0m / l和导电助剂：30-400g / l，其中基本上所有的钨离子与柠檬酸形成络合物，从而防止污泥的形成; 和Zn-Co-W合金电镀钢板，通过在电解液中电镀钢而形成镀层。

10. 发明申请

US20100185812A1 NONVOLATILE MEMORY DEVICE AND CACHE READ METHOD USING THE SAME 有权
标题翻译：非易失性存储器件和使用其的高速缓存读取方法
公开(公告)号：US20100185812A1
公开(公告)日：2010-07-22
申请号：US12646652
申请日：2009-12-23
申请人： Myung Su KIM
发明人： Myung Su KIM
IPC分类号： G06F12/08
CPC分类号： G06F12/0868 , G06F2212/214 , G06F2212/601 , G11C16/26
摘要： A nonvolatile memory device includes first and second registers configured to store parameters received via an input/output (IO) unit, a microcontroller configured to control an operation of the nonvolatile memory device according to the parameter stored in the first register, and a control logic unit configured to, when a parameter is received via the IO unit while the microcontroller performs an internal operation, store the received parameter in the second register.
摘要翻译：非易失性存储器件包括配置成存储经由输入/输出（IO）单元接收的参数的第一和第二寄存器，被配置为根据存储在第一寄存器中的参数来控制非易失性存储器件的操作的微控制器，以及控制逻辑单元被配置为当在微控制器执行内部操作时经由IO单元接收到参数时，将所接收的参数存储在第二寄存器中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式