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1. 发明申请

US20070092635A1 Apparatus and method for depositing thin films 审中-公开
标题翻译：用于沉积薄膜的设备和方法
公开(公告)号：US20070092635A1
公开(公告)日：2007-04-26
申请号：US11583801
申请日：2006-10-20
申请人： Myung Huh , Jae Ahn , Sang Han
发明人： Myung Huh , Jae Ahn , Sang Han
IPC分类号： B05D5/06 , C23C16/00
CPC分类号： C23C14/24 , C23C14/12 , C23C14/243 , C23C14/541
摘要： An apparatus and method for depositing a thin film, including a processing chamber having a film forming part and a deposition preventing part, the deposition preventing part being peripheral to the film forming part, an evaporation source in fluid communication with the processing chamber for accommodating a deposition material, and a heat absorbing plate formed in the deposition preventing part of the processing chamber, wherein the heat absorbing plate is positioned to surround a substrate placed in the film forming part of the processing chamber.
摘要翻译：一种用于沉积薄膜的设备和方法，包括具有成膜部分和沉积防止部分的处理室，所述沉积防止部分与所述成膜部分相邻，与所述处理室流体连通的蒸发源，用于容纳沉积材料和形成在处理室的防沉积部分中的吸热板，其中吸热板被定位成围绕放置在处理室的膜形成部分中的基板。

2. 发明申请

US20060257569A1 Method for in-situ polycrystalline thin film growth 有权
标题翻译：原位多晶薄膜生长方法
公开(公告)号：US20060257569A1
公开(公告)日：2006-11-16
申请号：US11433176
申请日：2006-05-12
申请人： Han Kim , Myoung Kim , Myung Huh , Seok Jeong , Hee Kang
发明人： Han Kim , Myoung Kim , Myung Huh , Seok Jeong , Hee Kang
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/44
摘要： A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.
摘要翻译：提供了一种原位多晶薄膜生长的方法。使用催化剂增强化学气相沉积（CECVD）装置来生长多晶硅薄膜。不需要随后的退火或脱氢过程。该方法包括排空室以形成真空室，然后净化真空室并引入催化剂。然后将基板放置在真空室中，并将反应气体注入室中。反应气体与室中的催化剂反应，以在衬底上生长多晶薄膜。本发明的方法减少了处理时间和生产成本，并且由于消除了大型退火设备而可用于制造更大的装置。

3. 发明申请

US20060154407A1 Chuck plate assembly with cooling means 有权
公开(公告)号：US20060154407A1
公开(公告)日：2006-07-13
申请号：US11298566
申请日：2005-12-12
申请人： Sang Han , Sung Lee , Myung Huh , Seok Jeong , Kwan Song , Hee Kang
发明人： Sang Han , Sung Lee , Myung Huh , Seok Jeong , Kwan Song , Hee Kang
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： C03C17/28 , C03C17/001 , C03C17/002 , C23C14/042 , C23C14/541
摘要： The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and a chuck plate, attaching the substrate to the shadow mask, that includes a refrigerant circulating duct. The temperature of the substrate is optimized in consideration of the temperature of the shadow mask so that an alignment error due to thermal deformation is minimized. That is, the temperature of the shadow mask itself is prevented from rising, and thereby prevents deformation of the shadow mask due to thermal expansion, which improves the precision of a substrate pattern position.

4. 发明申请

US20060169211A1 Vapor deposition source and vapor deposition apparatus having the same 有权
标题翻译：蒸气沉积源及其蒸镀装置
公开(公告)号：US20060169211A1
公开(公告)日：2006-08-03
申请号：US11342681
申请日：2006-01-31
申请人： Do Kim , Myung Huh , Seok Jeong , Hee Kang , Kazuo Furuno
发明人： Do Kim , Myung Huh , Seok Jeong , Hee Kang , Kazuo Furuno
IPC分类号： C23C16/00
CPC分类号： C23C14/243 , C23C14/24
摘要： A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted in the housing for vaporizing the deposition materials. The heating portion is installed adjacent to the crucible in the housing for heating the crucible. The nozzle portion injects the vaporized deposition materials into a substrate disposed at an exterior of the housing through an injection nozzle. The vapor deposition source is manufactured in a smaller and lightweight form in comparison with conventional vapor deposition sources in which a crucible and a nozzle portion are arranged in different spaces. The diameter and number of injection nozzles of the invention are restricted to block radiant heat discharged from the vapor deposition source, so that deposition materials are uniformly deposited. Furthermore, the output power of a conveyer for conveying the vapor deposition source is reduced. In addition, a plurality of vapor deposition sources is arranged in a line to perform concentrated deposition of deposition materials so that quality of the resultant product is improved.
摘要翻译：气相沉积源通过在一个限定的空间内设置坩埚，加热部分和喷嘴部分而具有减小的尺寸。气相沉积设备使用蒸镀源将沉积材料沉积在基板上。气相沉积源包括壳体，并且坩埚安装在壳体中以使沉积材料蒸发。加热部分安装在坩埚附近，用于加热坩埚。喷嘴部分通过注射喷嘴将蒸发的沉积材料注入设置在外壳外部的基板中。与其中坩埚和喷嘴部分布置在不同空间中的常规气相沉积源相比，气相沉积源以更小和轻质的形式制造。本发明的注射喷嘴的直径和数量被限制为阻挡从蒸镀源排出的辐射热，从而均匀地沉积沉积材料。此外，用于输送气相沉积源的输送机的输出功率降低。此外，多个气相沉积源被排列成一行，以进行沉积材料的浓缩沉积，从而提高所得产品的质量。

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