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    • 9. 发明授权
    • Automatic exposure calibration and compensation for machine vision
    • 自动曝光校准和机器视觉补偿
    • US08976257B2
    • 2015-03-10
    • US13562894
    • 2012-07-31
    • Mo ChenChun Jia
    • Mo ChenChun Jia
    • H04N5/235G06K9/38
    • H04N17/002H04N5/235
    • An automatic process for calibrating the optical image exposure value to compensate for changes in machine vision systems to maintain optimal exposure of captured images and adjust for the different characteristics among cameras components, such as imaging sensor sensitivity, LED strength, external lighting, reflective functions of any background material, different external lighting conditions, possible changes or updates of the systems over the years, such as LED changes, and even the aging of camera sensor and LEDs over time. A series of images of a target are captured with a predetermined sequence of exposure values, the saturation exposure percentage of a region of interest is calculated in each of the images, and the saturation exposure percentages are compared to determine the exposure value that has a saturation exposure percentage that varies the least from the saturation exposure value of the preceding and following exposure values.
    • 用于校准光学图像曝光值的自动处理,以补偿机器视觉系统的变化,以保持拍摄图像的最佳曝光,并调整摄像机组件之间的不同特性,如成像传感器灵敏度,LED强度,外部照明,反射功能 任何背景材料,不同的外部照明条件,多年来系统的可能变化或更新,例如LED变化,甚至相机传感器和LED随时间的老化。 以预定的曝光值序列拍摄目标的一系列图像,在每个图像中计算感兴趣区域的饱和曝光百分比,并且比较饱和曝光百分比以确定具有饱和度的曝光值 曝光百分比与前一曝光值和后续曝光值的饱和曝光值之间的最小值变化最小。
    • 10. 发明授权
    • Method for making light emitting diode
    • 制造发光二极管的方法
    • US08778709B2
    • 2014-07-15
    • US13479229
    • 2012-05-23
    • Zhen-Dong ZhuQun-Qing LiLi-Hui ZhangMo ChenShou-Shan Fan
    • Zhen-Dong ZhuQun-Qing LiLi-Hui ZhangMo ChenShou-Shan Fan
    • H01L21/00H01L33/00
    • H01L33/0079H01L33/0066H01L33/06H01L33/22H01L33/24
    • A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.
    • 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上,并且图案化掩模层包括多个棒状突出结构,在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。