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1. 发明授权

US5144395A Optically driven semiconductor device 失效
标题翻译：光驱半导体器件
公开(公告)号：US5144395A
公开(公告)日：1992-09-01
申请号：US672764
申请日：1991-03-19
申请人： Toshiaki Miyajima , Kazumasa Kioi , Mituo Matunami , Tukasa Doi , Minoru Yoshioka , Masayoshi Koba
发明人： Toshiaki Miyajima , Kazumasa Kioi , Mituo Matunami , Tukasa Doi , Minoru Yoshioka , Masayoshi Koba
IPC分类号： H01L27/142 , H01L27/144
CPC分类号： H01L27/142 , H01L27/1443 , Y02E10/50
摘要： An optically driven semiconductor device is disclosed which comprises a semiconductor substrate, a plurality of vertical field effect transistors formed on the substrate, and a plurality of optoelectric transducers formed on an insulating film above the respective transistors, wherein the transistors have the substrate in common as a drain. Also disclosed is an optically driven semiconductor device which comprises a semiconductor substrate, a vertical field effect transistor formed on the substrate and a solar cell formed on an insulating film above the substrate, wherein the solar cell is formed with a polycrystalline silicon layer or monocrystalline silicon layer grown by the chemical vapor deposition method. Moreover, there are disclosed optically coupled semiconductor relay devices using these optically driven semiconductor devices.
摘要翻译：公开了一种光驱动的半导体器件，其包括半导体衬底，形成在衬底上的多个垂直场效应晶体管和形成在各个晶体管上方的绝缘膜上的多个光电换能器，其中晶体管的基板共同为排水还公开了一种光驱动的半导体器件，其包括半导体衬底，形成在衬底上的垂直场效应晶体管和形成在衬底上的绝缘膜上的太阳能电池，其中太阳能电池形成有多晶硅层或单晶硅通过化学气相沉积法生长的层。此外，公开了使用这些光驱动半导体器件的光耦合半导体继电器装置。

2. 发明授权

US3952404A Beam lead formation method 失效
标题翻译：梁形成方法
公开(公告)号：US3952404A
公开(公告)日：1976-04-27
申请号：US456269
申请日：1974-03-29
申请人： Mituo Matunami
发明人： Mituo Matunami
IPC分类号： H01L21/78 , B01J17/00
CPC分类号： H01L21/78
摘要： The present disclosure is directed toward a method for making semiconductor devices having beam leads for electrical connections to external terminals. An undercoating metal film is deposited directly or via a protective film on a semiconductor wafer on which interconnections are formed together with electrode pad or contact areas. After subsequent deposition of an upper metal film, beam leads are formed in a desired pattern in a manner to contact with and extend from the electrode areas. The final step is to apply physical force to the semiconductor wafer such that the undercoating metal film serving also as a portion of the beam leads is forcibly spaced away from the major surface of the semiconductor wafer.
摘要翻译：本公开涉及一种用于制造具有用于到外部端子的电连接的光束引线的半导体器件的方法。直接或通过保护膜沉积在底层金属膜上，半导体晶片上与电极焊盘或接触区域形成互连。在随后沉积上部金属膜之后，以与所述电极区域接触并从电极区域延伸的方式以期望的图案形成束引线。最后的步骤是将物理力施加到半导体晶片，使得还用作一部分光束引线的底涂金属膜被强制地与半导体晶片的主表面隔开。

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