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1. 发明申请

WO1992019797A1 PROCESS FOR PULLING UP SINGLE CRYSTAL 审中-公开
标题翻译：拉伸单晶的方法
公开(公告)号：WO1992019797A1
公开(公告)日：1992-11-12
申请号：PCT/JP1991001790
申请日：1991-12-27
申请人： MITSUBISHI MATERIALS CORPORATION , MITSUBISHI MATERIALS SILICON CORPORATION , WAKABAYASHI, Daisuke , ANBE, Toshio , SAITOH, Masao
发明人： MITSUBISHI MATERIALS CORPORATION , MITSUBISHI MATERIALS SILICON CORPORATION
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1004 , Y10T117/1068 , Y10T117/1072
摘要： A process for pulling up single crystals of silicon by the growth of the single crystals from molten silicon in a crucible by the Czochralski process, wherein the single crystals are pulled up while sensing the data regarding various conditions which affect the pulling process and comparing them with the present values or allowances regarding these conditions.

2. 发明申请

US20040092043A1 Semiconductor manufacturing method and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造方法和半导体制造装置
公开(公告)号：US20040092043A1
公开(公告)日：2004-05-13
申请号：US10696702
申请日：2003-10-30
申请人： Mitsubishi Materials Silicon Corporation , NIPPON SANSO CORPORATION
发明人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki
IPC分类号： H01L021/66 , G01R031/26
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52 , C23C16/54 , C30B25/14 , C30B25/165 , H01L21/67242 , Y10S438/906 , Y10S438/908 , Y10T29/41
摘要： Disclosed is a semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing. Further disclosed are the semiconductor manufacturing method and a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the method comprises a substrate carrying step of measuring the moisture content in the airtight space by means of a first moisture measuring device which is connected to the airtight space, and thereafter, inserting and ejecting the substrate by means of the substrate carrying system, and a gas processing step of performing the reactive gas processing while measuring the moisture content in the reaction chamber by means of a second moisture measuring device, which is connected to the reaction chamber, after the substrate carrying step.
摘要翻译：公开了一种半导体制造方法，通过在处理过程中正确调整条件，可以高精度地进行诸如选择性外延生长的反应气体处理。还公开了可以限制水分含量增加，防止重金属污染等的半导体制造方法和半导体制造装置，并且研究处理室中的含水量与外部区域之间的相关性。在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。此外，该方法包括：基板承载步骤，通过连接到气密空间的第一湿度测量装置测量气密空间中的水分含量，然后通过基板承载系统插入和排出基板，以及气体处理步骤，在基板承载步骤之后，通过连接到反应室的第二水分测量装置测量反应室中的水分含量，进行反应气体处理。

3. 发明申请

US20020101576A1 Method for analyzing impurities in a silicon substrate and apparatus for decomposing a silicon substrate through vapor-phase reaction 有权
标题翻译：用于分析硅衬底中的杂质的方法和通过气相反应分解硅衬底的装置
公开(公告)号：US20020101576A1
公开(公告)日：2002-08-01
申请号：US09775209
申请日：2001-02-01
申请人： Mitsubishi Materials Silicon Corporation
发明人： Mohammad B. Shabani , Shigeru Okuuchi
IPC分类号： G01N001/00
CPC分类号： G01N1/32 , G01N1/40 , G01N2033/0095
摘要： The method of this invention for analyzing impurities present in a silicon substrate comprises the steps of accommodating a silicon substrate resting on a support, and a solution for decomposing a silicon substrate which comprises a mixture of hydrofluoric acid, nitric acid and sulfuric acid, in an air-tight reaction vessel, in such a way as to keep the silicon substrate from directly contacting with the decomposition solution; allowing the decomposing solution to vaporize, thereby causing the substrate to decompose through vapor-phase reaction for sublimation, without heating or pressurizing the reaction vessel; and recovering the residue left by the decomposed substrate, to analyze the impurities contained in the substrate. This method makes it possible to determine highly precisely the content of impurities present in a silicon substrate in a comparatively short time by decomposing the substrate through vapor-phase reaction without resorting to heating or pressurization.
摘要翻译：用于分析存在于硅衬底中的杂质的本发明的方法包括以下步骤：容纳沉积在载体上的硅衬底，以及用于分解包含氢氟酸，硝酸和硫酸的混合物的硅衬底的溶液，气密反应容器，以使硅衬底不与分解溶液直接接触; 使分解溶液蒸发，从而使基材通过气相反应分解升华，而不加热或加压反应容器; 并回收由分解的基底留下的残留物，以分析底物中所含的杂质。该方法可以通过气相反应分解底物而不用加热或加压，从而在相当短的时间内高精度地确定存在于硅衬底中的杂质的含量。

4. 发明申请

US20010042504A1 Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defects of the single crystal 有权
标题翻译：用于模拟单晶和熔液之间的固 - 液界面形状的方法，以及单晶点点缺陷的分布
公开(公告)号：US20010042504A1
公开(公告)日：2001-11-22
申请号：US09793862
申请日：2001-02-26
申请人： Mitsubishi Materials Silicon Corporation
发明人： Kounosuke Kitamura , Naoki Ono
IPC分类号： C30B015/00 , C30B001/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1008
摘要： A first step models a hot zone in a pulling apparatus of a single crystal as a mesh structure, and a second step inputs physical property values of each member corresponding to meshes combined for each member of the hot zone into a computer. A third step obtains the surface temperature distribution of each member on the basis of the calorific power of a heater and the emissivity of each member, and a fourth step obtains the internal temperature distribution of each member on the basis of the surface temperature distribution and the thermal conductivity of each member, and then further obtains the internal temperature distribution of a molten liquid being in consideration of convection. A fifth step obtains the shape of the solid-liquid interface between the single crystal and the molten liquid in accordance with an isothermal line including a tri-junction of the single crystal. A sixth step repeats said third to fifth steps until the tri-junction becomes the melting point of the single crystal. The invention aims at making the computation result and an actual measurement result of the shape of the solid-liquid interface between a single crystal and a molten liquid coincide very well with each other.
摘要翻译：第一步骤是将作为网格结构的单晶体的拉制装置中的热区域进行建模，并且第二步骤将与热区域的每个构件组合的网孔对应的每个构件的物理属性值输入到计算机中。第三步骤基于加热器的发热量和每个部件的发射率获得每个部件的表面温度分布，第四步骤基于表面温度分布获得每个部件的内部温度分布，并且每个构件的导热性，然后进一步获得考虑到对流的熔融液体的内部温度分布。第五步骤根据包括单晶三联的等温线获得单晶和熔液之间的固 - 液界面的形状。第六步骤重复所述第三至第五步骤，直到三联成为单晶的熔点。本发明旨在使计算结果和单晶与熔液之间的固 - 液界面形状的实际测量结果相互重合。

5. 发明申请

US20030124853A1 Anisotropic etching method and apparatus 审中-公开
标题翻译：各向异性蚀刻方法和装置
公开(公告)号：US20030124853A1
公开(公告)日：2003-07-03
申请号：US10352223
申请日：2003-01-28
申请人： Mitsubishi Materials Silicon Corporation
发明人： Hiroyuki Oi
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/67086 , H01L21/30608
摘要： An anisotropic etching method and apparatus is disclosed, by which the anisotropic etching of a wafer surface can be stably performed, the generation of null pyramids generated on the etched surface of a semiconductor wafer can be reduced, and the etching depth can be uniform. Therefore, during the anisotropic etching, a replenishing etchant which compensates for the evaporation of a component from the surface of the anisotropic etchant is continuously supplied by an amount corresponding to the amount of the component evaporated. An anisotropic etching apparatus is also disclosed, by which the etchant is not contaminated, the evaporated component of the etchant does not catch fire, the composition of the etchant does not change and the characteristics of the anisotropic etching are stabilized, the generation of null pyramids can be suppressed, and the etching depth is uniform over the wafer surface. In the apparatus, when a circulating pump is operated, a heating medium in a heating medium jacket is drawn into a heating medium circulating passage, and then is heated by a heating device in the middle of the passage and returned to the jacket. The anisotropic etchant in the anisotropic etching vessel is heated by the heat of the returned heating medium.
摘要翻译：公开了一种各向异性蚀刻方法和装置，可以稳定地进行晶片表面的各向异性蚀刻，可以减少在半导体晶片的蚀刻表面上产生的μ金字塔的产生，并且蚀刻深度可以是均匀的。因此，在各向异性蚀刻期间，补偿从各向异性蚀刻剂的表面蒸发成分的补充蚀刻剂以与蒸发的成分的量对应的量连续供给。还公开了各向异性蚀刻装置，其中蚀刻剂不被污染，蚀刻剂的蒸发组分不会起火，蚀刻剂的组成不变，并且各向异性蚀刻的特性是稳定的，所以产生μ金字塔可以抑制晶片表面的蚀刻深度均匀。在该装置中，当循环泵运转时，将加热介质套管中的加热介质拉入加热介质循环通道，然后在通道中间由加热装置加热并返回到夹套。各向异性腐蚀容器中的各向异性腐蚀剂被返回的加热介质的热量加热。

6. 发明申请

US20020189118A1 Linearity measuring apparatus for wafer orientation flat 有权
标题翻译：晶圆定向平面线性度测量仪
公开(公告)号：US20020189118A1
公开(公告)日：2002-12-19
申请号：US09904425
申请日：2001-07-12
申请人： Mitsubishi Materials Silicon Corporation
发明人： Cindy Kohanek , Gary Babb
IPC分类号： G01B005/20
CPC分类号： H01L21/67288
摘要： Straight tracks are formed in a first direction on a base. The top surface of a platform is formed so as to be flat to mount a wafer having an Ori-Fla, and the platform is moved in the first direction by being engaged with the straight tracks via engagement means. A block having a flat face against which the Ori-Fla of the wafer abuts and which is parallel with the first direction is installed with a first clearance L being provided with the straight track in a second direction perpendicular to the first direction. Wafer fixing means for fixing the wafer in a state in which the wafer is mounted on the platform is provided in the platform, and a measurement device having a probe opposed to the straight track and capable of being displaced in the second direction is installed on the base with a second clearance M being provided with the block in the first direction. When a clearance between the tip end of the probe and the straight track is taken as N, the relationship of 0 nullm
摘要翻译：直线轨道在基座上沿第一方向形成。平台的上表面形成为平坦的，以安装具有Ori-Fla的晶片，并且平台通过接合装置与直线轨道接合而在第一方向上移动。具有平坦面的块，其与晶片的Ori-Fla邻接并平行于第一方向，其中第一间隙L沿垂直于第一方向的第二方向设置有直线轨迹。在平台中设置用于将晶片固定在平台上的晶片的晶片固定装置，并且具有与直线轨道相对并能够沿第二方向移位的探针的测量装置安装在底座具有沿第一方向设置有块的第二间隙M。当探针的尖端与直线轨迹之间的间隙取为N时，存在0mum

7. 发明申请

US20020045283A1 Method and apparatus for evaluating the quality of a semiconductor substrate 有权
标题翻译：用于评估半导体衬底的质量的方法和装置
公开(公告)号：US20020045283A1
公开(公告)日：2002-04-18
申请号：US09815208
申请日：2001-03-22
申请人： Mitsubishi Materials Silicon Corporation
发明人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
IPC分类号： H01L021/66 , G01R031/26
CPC分类号： G01N21/6489 , G01N21/6408
摘要： A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time null of the semiconductor substrate from an expression nullnullnullT/Cnull, where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.
摘要翻译：激光装置与半导体基板之间的第一斩波器以特定频率切断激励光，第一斩波器与半导体基板之间的第二斩波器以比第一斩波器高的可变频率对激发光进行斩波。当半导体衬底间歇地用激发光照射时，由半导体衬底发射的光致发光被引入到单色器中。控制器通过控制第二斩波器逐渐增加激发光的斩波频率，从光致发光光的平均强度的变化中获得光致发光光的衰减时间常数T，并计算寿命＆tgr; 从表达式“＆Tgr; = T / C”得到半导体衬底，其中C是常数。本发明的目的是通过定量地获得具有长寿命的半导体衬底的寿命来准确地评估半导体衬底中的杂质，缺陷等。

8. 发明申请

US20020168880A1 Method for cleaning polysilicon 审中-公开
公开(公告)号：US20020168880A1
公开(公告)日：2002-11-14
申请号：US09851699
申请日：2001-05-08
申请人： Mitsubishi Materials Silicon Corporation
发明人： Kenji Hori
IPC分类号： G11C008/00
CPC分类号： B08B3/04 , B08B7/04 , Y10S438/906
摘要： A method for cleaning polysilicon comprises steps of cleaning solid or granular polysilicon with an aqueous solution of dissolved ozone, and of cleaning with hydrofluoric acid the polysilicon receiving the above cleaning based on an aqueous solution of dissolved ozone, wherein the above steps are executed once in this order, or the above steps are repeated once or more in this order. Subsequent to the last cleaning step using hydrofluoric acid, a still other step of cleaning the polysilicon with pure water and then drying it is preferably added. This method for cleaning polysilicon allows organic materials, particles and metal impurities adsorbed on the surface of polysilicon to be removed at a low cost, and to increase the freeing rate.

9. 发明申请

US20020061605A1 Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses 有权
标题翻译：吹扫CVD装置的方法以及用于判断半导体制造装置的维护时间的方法
公开(公告)号：US20020061605A1
公开(公告)日：2002-05-23
申请号：US10021259
申请日：2001-12-19
申请人： Mitsubishi Materials Silicon Corporation and Nippon Sanso Corporation
发明人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki , Takayuki Satou , Katsumasa Suzuki , Hiroki Tokunaga
IPC分类号： H01L021/00
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52
摘要： The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.
摘要翻译：本发明公开了一种CVD装置，其能够在维护后能够有效地进行清洗处理，在维护后的加热流动清洗处理中，使用具有高导热性的气体和惰性气体的混合气体进行吹扫，以进行启动的CVD装置，同时减少清洗处理所需的时间。在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。此外，为了判断在反应室中进行腐蚀性气体处理的半导体制造装置的合适的维护时间，在进行腐蚀性气体处理时，在与反应室连接的水分计测量反应室中的水分浓度，并进行维护时间根据重复进行腐蚀性气体处理时的水分浓度的变化来确定半导体制造装置。此外，为了在加工过程中测量腐蚀性气体的湿度，同时防止水分监测装置和配备的半导体制造装置中的管道的阻塞，配备有管道的水分监测装置，其一端连接到腐蚀性气体流入的反应室和与该管的另一端连接的湿度计，其测量从反应室引入的腐蚀性气体中含有的水分，至少配备有加热管道的管道加热机构。

10. 发明申请

US20020045329A1 Dielectrically separated wafer and method of manufacturing the same 有权
标题翻译：电离离散晶片及其制造方法
公开(公告)号：US20020045329A1
公开(公告)日：2002-04-18
申请号：US09942739
申请日：2001-08-31
申请人： Mitsubishi Materials Silicon Corporation
发明人： Hiroyuki Oi , Kazuya Sato , Hiroshi Shimamura
IPC分类号： H01L021/425
CPC分类号： H01L21/2007 , H01L21/304 , H01L21/76264 , H01L21/76275 , H01L21/76286 , Y10S438/928
摘要： A dielectrically separated wafer and a fabrication method of the same are provided according to the first, second and third embodiments of the present invention. According to the first embodiment, it becomes possible to expand the device fabrication surface area of the dielectrically separated silicon islands by laminating a low concentration impurity layer including a dopant of the same conductivity on a high concentration impurity layer formed on the bottom of the island. According to the second embodiment, a dielectrically separated wafer and a fabrication method for the same which can grow a polysilicon layer without producing voids in the dielectrically separating oxide layer is provided by forming a seed polyslicon layer at low temperature and under low pressure and by forming, on the seed polysilicon layer, a high temperature polysilicon layer 16. According to the third embodiment, a dielectrically separated wafer and a fabrication method for the same is provided in which the surface between dielectrically separated islands is flattened by polishing the surface of the dielectrically separated wafer only the amount needed for the surface of a dielectrically separated wafer to become a flat surface between dielectrically separated silicon islands 10A, without projections or indentations.
摘要翻译：根据本发明的第一，第二和第三实施例提供了一种介电分离的晶片及其制造方法。根据第一实施例，通过在形成在岛的底部上的高浓度杂质层上层叠包括具有相同导电性的掺杂剂的低浓度杂质层，可以扩展介电离开的硅岛的器件制造表面积。根据第二实施例，通过在低温和低压下形成种子多晶硅层，并且通过形成在第二实施例中，通过在低温和低压下形成种子多晶硅层来提供可以在不产生空隙的情况下生长多晶硅层的电介质分离的晶片及其制造方法在种子多晶硅层上形成高温多晶硅层16.根据第三实施例，提供了一种介电分离的晶片及其制造方法，其中介电分离岛之间的表面通过抛光介电表面而变平分离的晶片仅仅是介电离开的晶片的表面所需的量成为介电分离的硅岛10A之间的平坦表面，没有突起或凹陷。

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