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1. 发明授权

US5596531A Method for decreasing the discharge time of a flash EPROM cell 失效
标题翻译：降低闪速EPROM单元的放电时间的方法
公开(公告)号：US5596531A
公开(公告)日：1997-01-21
申请号：US450167
申请日：1995-05-25
申请人： David K. Y. Liu , Ming S. Kwan , Chi Chang , Sameer Haddad , Yuan Tang
发明人： David K. Y. Liu , Ming S. Kwan , Chi Chang , Sameer Haddad , Yuan Tang
IPC分类号： G11C16/14 , G11C7/00
CPC分类号： G11C16/14
摘要： The present invention presents methods for reducing the discharge time of a Flash EPROM cell. In one aspect, a method includes the steps of forcing an ultraviolet voltage threshold, UVV.sub.t, below a discharge threshold voltage, V.sub.t. The method further comprises reducing the UVV.sub.t to about 0 V. Further, the method further comprises the step of reducing a core cell implant of a p-type dopant into a substrate of the cell. In a further aspect, a method for decreasing the discharge time includes the steps of providing a core cell implant of a p-type dopant into a surface of a substrate of the cell, and providing a surface doping of an n-type dopant into the core of the substrate, where the core implant reduces punchthrough and the surface doping of an n-type dopant reduces V.sub.t in the cell. In yet another aspect, a method for decreasing a discharge time of a Flash EPROM cell while reducing punchthrough includes the steps of providing a high energy core cell implant of a p type dopant into a substrate of the cell, wherein the core has a doping concentration profile with a low dopant concentration at a surface of the core to reduce UVV.sub.t and a high dopant concentration at lower than the surface to reduce punchthrough.
摘要翻译：本发明提出了减少闪存EPROM单元的放电时间的方法。在一个方面，一种方法包括以下步骤：将紫外线电压阈值UVVt强制在放电阈值电压Vt以下，该方法还包括将UVVt降低到约0V。此外，该方法还包括如下步骤：将p型掺杂剂细胞注入细胞的底物。在另一方面，一种减少放电时间的方法包括以下步骤：将p型掺杂剂的核心单元注入提供到电池的衬底的表面中，并且向n型掺杂剂表面掺杂衬底的芯部，其中芯体植入物减少穿透并且n型掺杂剂的表面掺杂减小了电池中的Vt。在另一方面，一种减少穿透时减少闪存EPROM单元的放电时间的方法包括以下步骤：将ap型掺杂剂的高能核心单元注入提供到电池的衬底中，其中芯具有掺杂浓度分布在芯的表面处具有低掺杂剂浓度以降低UVVt，并且在低于表面的情况下具有高掺杂剂浓度以减少穿透。

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