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    • 3. 发明授权
    • Multilayer ceramic chip capacitor with high reliability compatible with nickel electrodes
    • 多层陶瓷片式电容器具有高可靠性,兼容镍电极
    • US06185087B2
    • 2001-02-06
    • US09288079
    • 1999-04-08
    • Hyun D. ParkJoseph D. NanceMike S. H. ChuYuval Avniel
    • Hyun D. ParkJoseph D. NanceMike S. H. ChuYuval Avniel
    • H01G406
    • H01G4/1227
    • Multilayer ceramic chip capacitors which satisfy X7R requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers preferably contain BaTiO3 as the major component and CaTiO3, BaO, CaO, SrO, Si02, MnO2, Y2O3, and CoO as minor components in such proportions so that there are present 0.1 to 4 mol % CaTiO3, 0.1 to 2 mol % BaO, 0 to 1 mol % CaO, 0 to 1 mol % SrO, 0.1 to 5 mol % SiO2, 0.01 to 2 mol % MnO2, 0.1 to 3 mol % Y2O3, and 0.01 to 1 mol % CoO. The preferred form of the invention may be sintered in the temperature range 1,250 to 1,400° C. in a reducing atmosphere having a humidified mixture of nitrogen and hydrogen. Additionally, a re-oxidation procedure may be utilized during the sintering cycle to optimize the resistance of the ceramic to dielectric breakdown.
    • 根据本发明制备满足X7R要求并且与还原气氛烧结条件兼容的多层陶瓷片式电容器,以使非贵金属如镍,铜及其合金可用于内部和外部电极。 电容器表现出所需的介电特性(高电容,低损耗因数,高绝缘电阻),在高速加速寿命测试中具有出色的性能,以及非常好的耐电介质击穿性能。 电介质层优选以作为主要成分的BaTiO 3和CaTiO 3,BaO,CaO,SrO,SiO 2,MnO 2,Y 2 O 3和CoO作为次要成分,使得存在0.1〜4摩尔%的CaTiO 3,0.1〜2摩尔% BaO,0〜1mol%CaO,0〜1mol%SrO,0.1〜5mol%SiO 2,0.01〜2mol%MnO 2,0.1〜3mol%Y 2 O 3和0.01〜1mol%的CoO。 本发明的优选形式可以在具有氮和氢的加湿混合物的还原气氛中在1250至1400℃的温度范围内烧结。 此外,可以在烧结循环期间利用再氧化工艺来优化陶瓷对绝缘击穿的电阻。
    • 8. 发明授权
    • X7R dielectric composition
    • X7R电介质组成
    • US06828266B1
    • 2004-12-07
    • US10440051
    • 2003-05-16
    • Hyun ParkDaniel E. McCauleyMike S. H. Chu
    • Hyun ParkDaniel E. McCauleyMike S. H. Chu
    • C04B35468
    • C04B35/4682B32B2311/22C03C3/091C03C8/02C03C8/14C04B35/63416C04B35/638C04B35/64C04B2235/3206C04B2235/3208C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/3263C04B2235/3409C04B2235/3418C04B2235/365C04B2235/5445C04B2235/6025C04B2235/652C04B2235/6584C04B2235/663C04B2235/785C04B2237/346C04B2237/405H01G4/1227H01G4/30
    • Multilayer ceramic chip capacitors which satisfy X7R requirements and which are compatible with reducing-atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers preferably contain BaTiO3 as the major component and Mn3O4 Y2O3, Ho2O3, CaCO3, SiO2, B2O3, Al2O3, MgO, and CaO as minor constituents. They are batched in a proportion that there are preferably present 99.00 to 98.5 wt. % BaTiO3, 0.336 to 0.505 wt. % Mn3O4, 0.198 to 0.296 wt. % Y2O3, 0.132 to 0.198 wt. % Ho2O3, 0.199 to 0.299 wt. % CaCO3, 0.057 to 0.085 wt. % SiO2, 0.039 to 0.058 wt. % B2O3, 0.018 to 0.027 wt. % Al2O3, 0.016 to 0.025 wt. % MgO and 0.005 to 0.007 wt. % CaO. The B2O3, SiO2, MgO, Al2O3, and CaO are preferably present in the form of pre-reacted glass. The preferred form of the invention may be sintered in the temperature range 1,200 to 1,300° C. in a reducing atmosphere. Additionally, a re-oxidation procedure may be utilized during the sintering cycle to optimize the resistance of the ceramic to dielectric breakdown.
    • 根据本发明制备满足X7R要求并且与还原气氛烧结条件兼容的多层陶瓷片式电容器,以使非贵金属如镍,铜及其合金可用于内部和外部电极。 电容器表现出所需的介电特性(高电容,低损耗因数,高绝缘电阻),在高速加速寿命测试中具有出色的性能,以及非常好的耐电介质击穿性能。 电介质层优选含有作为主要成分的BaTiO 3,Mn 3 O 4 Y 2 O 3,Ho 2 O 3,CaCO 3,SiO 2,B 2 O 3,Al 2 O 3,MgO和CaO作为次要成分。 它们的分批比例优选为99.00至98.5重量%。 %BaTiO 3,0.336〜0.505wt。 %Mn 3 O 4,0.198〜0.296重量% %Y 2 O 3,0.132〜0.198重量% %Ho2O3,0.199〜0.299wt。 %CaCO 3,0.057〜0.085重量% %SiO 2,0.039〜0.058重量% %B 2 O 3,0.018〜0.027重量% %Al 2 O 3,0.016〜0.025重量% %MgO和0.005〜0.007wt。 %CaO。 B 2 O 3,SiO 2,MgO,Al 2 O 3和CaO优选以预反应玻璃的形式存在。 本发明的优选形式可以在还原气氛中在1200至1300℃的温度范围内烧结。 此外,可以在烧结循环期间利用再氧化工艺来优化陶瓷对绝缘击穿的电阻。
    • 10. 发明授权
    • Low temperature fired dielectric ceramic composition with flat TC
characteristic and method of making
    • 具有扁平TC特性的低温烧结介电陶瓷组合物及其制备方法
    • US4540676A
    • 1985-09-10
    • US613250
    • 1984-05-23
    • Mike S. H. ChuCharles E. HodgkinsDaniel C. Rose
    • Mike S. H. ChuCharles E. HodgkinsDaniel C. Rose
    • C04B35/46C04B35/468H01B3/12H01G4/12
    • H01G4/1227C04B35/4684
    • A low temperature fired ceramic dielectric composition in which the dielectric constant does not vary from its base value of over 2400 by more than 15 percent over a wide temperature range. A base ceramic preparation (a) and a ceramic flux (b), each consisting essentially of metal oxides or precursors thereof to provide in oxide form (a) 98.0 to 99 weight percent barium titanate, from about 0.97 to about 1.54 weight percent niobium pentoxide and from about 0.19 to about 0.32 weight percent cobalt oxide; (b) from about 16 to about 60 weight percent bismuth titanate, about 8 to about 52 weight percent lead titanate, about 18 to about 35 weight percent zinc oxide and about 5 to about 11 weight percent boron oxide. Manganese dioxide or precursor thereof in amount of from about 0 to 0.114 percent of the combined weight of the base ceramic preparation and ceramic flux is added to the metal oxides or precursors of the base ceramic preparation and ceramic flux and the mixture is fired at a temperature less than about 1150.degree. C.
    • 一种低温烧制陶瓷电介质组合物,其中介电常数在宽的温度范围内,其基值超过2400的值不会超过15%。 一种基础陶瓷制剂(a)和一种陶瓷助熔剂(b),各自主要由金属氧化物或其前体组成,以氧化物形式(a)98.0至99重量%的钛酸钡,约0.97至约1.54重量%的五氧化二铌 和约0.19至约0.32重量%的氧化钴; (b)约16至约60重量%的钛酸铋,约8至约52重量%的钛酸铅,约18至约35重量%的氧化锌和约5至约11重量%的氧化硼。 将二氧化锰或其前体的量占基础陶瓷制剂和陶瓷助熔剂的总重量的约0至1.114%加入到基础陶瓷制剂和陶瓷助熔剂的金属氧化物或前体中,并将​​混合物在温度 小于约1150℃