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1. 发明授权

US08278920B2 Magnetic sensor and magnetic measurement method 有权
标题翻译：磁传感器和磁测量方法
公开(公告)号：US08278920B2
公开(公告)日：2012-10-02
申请号：US12542103
申请日：2009-08-17
申请人： Miho Mochizuki , Toru Takeda
发明人： Miho Mochizuki , Toru Takeda
IPC分类号： G01R33/06
CPC分类号： G01R33/07
摘要： For a Hall element of a magnetic sensor, a current is caused to pass along a +X-direction and a first voltage is measured in a +Y-direction, a current is caused to pass along the +Y-direction and a second voltage is measured in the +X-direction, a current is caused to pass along a −X-direction and a third voltage is measured in the +Y-direction, and a current is caused to pass along a −Y-direction and a fourth voltage is measured in the +X-direction. Then, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the first voltage and a value of the second voltage, and the result is compared with a reference value. Furthermore, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the third voltage and a value of the fourth voltage, and the result is compared with the reference value.
摘要翻译：对于磁传感器的霍尔元件，使电流沿+ X方向通过，并且在+ Y方向上测量第一电压，使电流沿+ Y方向通过，并且将第二电压在+ X方向上测量，使电流沿-X方向通过，并且在+ Y方向上测量第三电压，并且使电流沿着-Y方向和第四电压在+ X方向测量。然后，进行相互加强霍尔电压的影响的计算，并且基于第一电压的值和第二电压的值相互抵消偏移电压的影响，并将结果与基准值进行比较。此外，进行相互加强霍尔电压的影响的计算，并且基于第三电压的值和第四电压的值相互抵消偏移电压的影响，并将结果与基准值进行比较。

2. 发明申请

US20100052671A1 MAGNETIC SENSOR AND MAGNETIC MEASUREMENT METHOD 有权
标题翻译：磁传感器和磁性测量方法
公开(公告)号：US20100052671A1
公开(公告)日：2010-03-04
申请号：US12542103
申请日：2009-08-17
申请人： Miho Mochizuki , Toru Takeda
发明人： Miho Mochizuki , Toru Takeda
IPC分类号： G01R33/06
CPC分类号： G01R33/07
摘要： For a Hall element of a magnetic sensor, a current is caused to pass along a +X-direction and a first voltage is measured in a +Y-direction, a current is caused to pass along the +Y-direction and a second voltage is measured in the +X-direction, a current is caused to pass along a −X-direction and a third voltage is measured in the +Y-direction, and a current is caused to pass along a −Y-direction and a fourth voltage is measured in the +X-direction. Then, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the first voltage and a value of the second voltage, and the result is compared with a reference value. Furthermore, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the third voltage and a value of the fourth voltage, and the result is compared with the reference value.
摘要翻译：对于磁传感器的霍尔元件，使电流沿+ X方向通过，并且在+ Y方向上测量第一电压，使电流沿+ Y方向通过，并且将第二电压在+ X方向上测量，使电流沿-X方向通过，并且在+ Y方向上测量第三电压，并且使电流沿着-Y方向和第四电压在+ X方向测量。然后，进行相互加强霍尔电压的影响的计算，并且基于第一电压的值和第二电压的值相互抵消偏移电压的影响，并将结果与参考值进行比较。此外，进行相互加强霍尔电压的影响的计算，并且基于第三电压的值和第四电压的值相互抵消偏移电压的影响，并将结果与基准值进行比较。

3. 发明申请

US20080150108A1 SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体封装及其制造方法
公开(公告)号：US20080150108A1
公开(公告)日：2008-06-26
申请号：US11964460
申请日：2007-12-26
申请人： Miho Mochizuki
发明人： Miho Mochizuki
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L23/3107 , H01L23/481 , H01L23/4951 , H01L23/49548 , H01L24/05 , H01L24/08 , H01L24/80 , H01L2224/0554 , H01L2224/0557 , H01L2224/05572 , H01L2224/05573 , H01L2224/08245 , H01L2224/80205 , H01L2224/80805 , H01L2224/8083 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/181 , H01L2924/351 , H01L2224/131 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor package includes: a semiconductor chip and a plurality of frames. A plurality of electrodes are formed on a surface of the semiconductor chip. The plurality of frames are connected to the plurality of electrodes. The plurality of frames are formed by dividing one conductive plate by etching.
摘要翻译：半导体封装包括：半导体芯片和多个框架。多个电极形成在半导体芯片的表面上。多个框架连接到多个电极。多个框架通过蚀刻分割一个导电板而形成。

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