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    • 1. 发明授权
    • Wafer polishing apparatus having physical cleaning means to remove
particles from polishing pad
    • 具有用于从抛光垫去除颗粒的物理清洁装置的晶片抛光装置
    • US5690544A
    • 1997-11-25
    • US623936
    • 1996-03-28
    • Michio Sakurai
    • Michio Sakurai
    • B24B57/02B24B53/007B24B53/017H01L21/304B24B21/18B24B33/00B24B47/26B24B55/00
    • B24B53/017
    • The invention relates to an apparatus for polishing wafers in the fabrication of semiconductor integrated circuits. The apparatus has a turntable on which a polishing pad of polyurethane foam is placed. The pad has a multiplicity of cavities in the polishing surface. In periodically dressing the pad, abrasive grains of diamond fall off the dressing tool, and some of the fallen abrasive grains remain in the cavities in the pad surface even though the pad surface is washed by water. According to the invention the polishing apparatus includes a cleaning device to drive abrasive grains out of the cavities. The cleaning device has a cylindrical body which rotates above the polishing pad. In an embodiment the cleaning device is a rotary brush having a multiplicity of needle-like parts of a synthetic resin on the cylindrical outer surface. The needle-like parts intrude into the cavities in the pad surface and flip abrasive grains out of the cavities. In another embodiment the cleaning device has an elastic covering on the cylindrical body. The elastic covering is squeezed into the cavities to temporarily close the opening of the cavities and reduce the air pressure in the cavities. When the elastic covering leaves the cavities a rush of the air into the cavities drives diamond grains out of the cavities.
    • 本发明涉及一种在制造半导体集成电路中抛光晶片的装置。 该装置具有放置聚氨酯泡沫的抛光垫的转台。 该抛光垫在抛光表面中具有多个空腔。 在定期修整垫片时,金刚石的磨粒从修整工具脱落,并且一些掉落的磨料颗粒保留在垫表面的空腔中,即使垫表面被水洗涤。 根据本发明,抛光装置包括将磨料颗粒驱出空腔的清洁装置。 清洁装置具有在抛光垫上方旋转的圆柱体。 在一个实施例中,清洁装置是在圆筒形外表面上具有合成树脂的多个针状部分的旋转刷。 针状部件侵入垫表面中的空腔并将磨料颗粒从空腔中翻出。 在另一个实施例中,清洁装置在圆柱体上具有弹性覆盖物。 弹性覆盖物被挤压到空腔中以临时闭合空腔的开口并且减小空腔中的空气压力。 当弹性覆盖物离开空腔时,空气涌入空腔将金刚石颗粒驱出空腔。
    • 5. 发明授权
    • Method of manufacturing semiconductor device in which opening can be formed with high precision
    • 可以高精度地形成开口的半导体装置的制造方法
    • US06287750B1
    • 2001-09-11
    • US08838654
    • 1997-04-09
    • Michio Sakurai
    • Michio Sakurai
    • G03F740
    • H01L21/76802H01L21/31116H01L21/31144
    • In a method of manufacturing a semiconductor device, an inorganic insulating layer is formed to cover a conductive layer, a polyimide layer is formed to cover the inorganic insulating layer, and a photo-resist layer is formed to cover the polyimide layer. An opening portion is formed by use of development or a wet etching to pass through the photo-resist layer and the polyimide layer to the inorganic insulating film. Then, after the photo-resist layer is removed, heat treatment is performed of the polyimide layer. Subsequently, the inorganic insulating film is etched using the polyimide layer having the opening portion as a mask. The photo-resist layer has a film thickness in a range of 4 to 10 &mgr;m, and the polyimide layer has a film thickness in a range of 5 to 20 &mgr;m.
    • 在制造半导体器件的方法中,形成无机绝缘层以覆盖导电层,形成覆盖无机绝缘层的聚酰亚胺层,形成覆盖聚酰亚胺层的光致抗蚀剂层。 通过显影或湿蚀刻形成开口部分,以将光致抗蚀剂层和聚酰亚胺层通过无机绝缘膜。 然后,除去光致抗蚀剂层后,对聚酰亚胺层进行热处理。 随后,使用具有开口部分的聚酰亚胺层作为掩模来蚀刻无机绝缘膜。 光致抗蚀剂层的膜厚在4〜10μm的范围内,聚酰亚胺层的膜厚在5〜20μm的范围内。
    • 6. 发明授权
    • Method of polishing semiconductor substrate
    • 抛光半导体衬底的方法
    • US5700348A
    • 1997-12-23
    • US758761
    • 1996-12-03
    • Michio Sakurai
    • Michio Sakurai
    • B08B3/08B24B37/00H01L21/304H01L21/3105H01L21/00B24B1/00
    • H01L21/31053
    • In a CMP (chemical and mechanical polishing) method in which an insulating film is formed on one surface (back surface) of a semiconductor substrate and then the insulating film is chemically and mechanically polished with abrasive, an insulating thin film is formed on the surface of the semiconductor substrate on which no insulating film is provided and silicon is exposed to the outside, and a hydrophilic film is formed on the surface of the insulating thin film. Thereafter, the CMP is conducted to polish the insulating film on the back surface, and then the abrasive is chemically and physically removed. Accordingly, by providing the hydrophilic thin film on the back surface of the semiconductor substrate, it is avoidable that the abrasive on the back surface of the semiconductor substrate is partially dried and the abrasive grains are fixed to the back surface, so that the effect of removing the abrasive in the subsequent step can be improved.
    • 在半导体衬底的一个表面(背面)上形成绝缘膜,然后用研磨剂对绝缘膜进行化学和机械抛光的CMP(化学和机械抛光)方法中,在表面上形成绝缘薄膜 在其上没有设置绝缘膜并且硅暴露于外部的半导体衬底,并且在绝缘薄膜的表面上形成亲水膜。 此后,进行CMP以抛光后表面上的绝缘膜,然后化学和物理地除去研磨剂。 因此,通过在半导体基板的背面设置亲水性薄膜,可以避免半导体基板的背面上的研磨剂被部分干燥,磨粒固定在背面,因此, 可以改善在后续步骤中去除磨料。