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1. 发明专利

JP2007088133A Method and device for measuring surface state 有权
标题翻译：用于测量表面状态的方法和装置
公开(公告)号：JP2007088133A
公开(公告)日：2007-04-05
申请号：JP2005273544
申请日：2005-09-21
申请人： Advantest Corp , Michio Niwano , 道夫庭野 , 株式会社アドバンテスト
发明人： ENDO HIROAKI , MARUO KAZUYUKI , MAEDA YASUHIRO , NIWANO MICHIO
IPC分类号： H01L21/66 , G01N21/27
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for measuring a surface state capable of surely detecting a substance with a surface on which the substance adheres, and capable of simply measuring the surface state in the measurement of the surface state of a substrate by an infrared multiple internal reflection method. SOLUTION: The device for measuring the surface state has an incidence optical system 18 projecting infrared rays to a wafer 14, and an infrared analyzer 20 detecting infrared rays emitted from the wafer 14 after multiple reflections in the wafer 14 and measuring the state of the surface of the wafer 14 on the basis of the detected infrared rays. The infrared analyzer 20 detects first infrared rays and second ones having the different numbers of the multiple reflections in the wafer 14, respectively. The infrared analyzer 20 identifies the kind of a chemical substance adhering on the wafer 14 on the basis of the result of the detection of first infrared rays and second infrared rays, and determines the quantity of the chemical substance adhered. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量表面状态的方法和装置，其能够可靠地检测具有物质粘附的表面的物质，并且能够简单地测量表面状态的测量中的表面状态通过红外多重内反射方法。解决方案：用于测量表面状态的装置具有将红外线投射到晶片14的入射光学系统18和在晶片14中多次反射之后检测从晶片14发射的红外线的红外分析仪20，并测量该状态基于所检测的红外线的晶片14的表面。红外线分析器20分别检测第一红外线和第二红外线和第二红外线的晶片14中具有不同数量的多次反射的红外线。红外线分析器20基于第一红外线和第二红外线的检测结果来识别附着在晶片14上的化学物质的种类，并确定附着的化学物质的量。版权所有（C）2007，JPO＆INPIT

2. 发明授权

US06508990B1 Substrate treating method and apparatus 失效
标题翻译：基板处理方法及装置
公开(公告)号：US06508990B1
公开(公告)日：2003-01-21
申请号：US09354054
申请日：1999-07-15
申请人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
发明人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
IPC分类号： B01J1908
CPC分类号： H01J37/32935 , B08B7/0035 , C23C14/02 , C23C14/547 , C23C16/02 , C23C16/52 , G01N21/9501 , G01N21/9503 , G01N21/9505 , H01L21/67253 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.
摘要翻译：一种能够对半导体衬底的表面状态进行原位监测的衬底处理方法和装置。基板处理装置包括用于对基板进行所需处理的基板处理装置，用于将由红外线辐射源发射的红外线辐射聚集到基板的外周部分并将红外辐射引入基板的装置，用于检测红外线在基板内经历多次反射并从基板排出的辐射，用于分析检测到的红外辐射的装置，用于监测基板的表面状态的装置，以及用于控制基板处理装置的控制装置，基于所监视的表面状态底物。

3. 发明授权

US06476393B1 Surface state monitoring method and apparatus 失效
标题翻译：表面状态监测方法及装置
公开(公告)号：US06476393B1
公开(公告)日：2002-11-05
申请号：US09321505
申请日：1999-05-27
申请人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
发明人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
IPC分类号： G01N2100
CPC分类号： G01N21/94 , G01J3/02 , G01J3/0216 , G01J3/108 , G01J3/45 , G01N21/552 , G01N21/9501 , G01N21/9503 , G01N21/9505 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means 30 for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means 30; condensing means 40 for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means 50 for detecting the infrared radiation condensed by the infrared radiation condensing means 40, and analyzing means 60 for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.
摘要翻译：一种表面状态监测方法和装置，用于对半导体衬底的表面状态进行原位监测。该装置包括用于将红外辐射聚焦到待监测基板的外周部分的冷凝装置30; 控制装置80，用于控制由冷凝装置30冷凝的红外辐射的入射角; 冷凝装置40，用于冷凝在待监测的基板中经历多次反射的红外辐射; 用于检测由红外辐射聚集装置40聚集的红外辐射的检测装置50，以及用于分析检测到的检测到的红外辐射并测量留在待监测基板的表面上的污染物的分析装置60。

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