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1. 发明授权

US07892705B2 Photomask and method of making thereof 有权
标题翻译：光掩模及其制造方法
公开(公告)号：US07892705B2
公开(公告)日：2011-02-22
申请号：US11865982
申请日：2007-10-02
申请人： Sean D. Burns , Michael M. Crouse , Dario L. Goldfarb
发明人： Sean D. Burns , Michael M. Crouse , Dario L. Goldfarb
IPC分类号： G03F1/00
CPC分类号： G03F1/82 , G03F1/50
摘要： The disclosure is related to photomasks used in photolithography and methods of making photomasks. The method involves providing a transparent substrate with one or more reflective films disposed over a surface of the substrate, applying a photoresist to the solution-contacted reflective film and forming a pattern in the photoresist that is transferred to the substrate, and developing the pattern on the substrate by removing the remaining portions of the photoresist. The substrate carrying the patterned reflective film is then contacted with a solution comprising oxyanions. The disclosure is also related to photomasks made using the disclosed method.
摘要翻译：本公开涉及光刻中使用的光掩模和制造光掩模的方法。该方法包括提供一个透明衬底，一个或多个反射膜设置在衬底的表面上，向溶液接触的反射膜施加光致抗蚀剂并在转移到衬底上的光致抗蚀剂中形成图案，并且在通过去除光致抗蚀剂的剩余部分来实现。然后，携带图案化反射膜的基板与含有阴离子的溶液接触。本公开还涉及使用所公开的方法制造的光掩模。

2. 发明授权

US07975246B2 MEEF reduction by elongation of square shapes 有权
标题翻译：通过平方形延伸的MEEF减小
公开(公告)号：US07975246B2
公开(公告)日：2011-07-05
申请号：US12191493
申请日：2008-08-14
申请人： Derren Neylon Dunn , Michael M Crouse , Henning Haffner , Michael Edward Scaman
发明人： Derren Neylon Dunn , Michael M Crouse , Henning Haffner , Michael Edward Scaman
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00 , G21K5/00
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method that purposely relaxes OPC algorithm constraints to allow post OPC mask shapes to elongate along one direction (particularly lowering the 1-dimensional MEEF in this direction with the result of an effectively overall lowered MEEF) to produce a pattern on wafer that is circular to within an acceptable tolerance.
摘要翻译：一种意图放松OPC算法约束以允许OPC掩模形状沿着一个方向伸长的方法（特别是在该方向上降低1维MEEF，结果是有效地降低了MEEF），从而在晶圆上产生一个圆形到在可接受的容限内。

3. 发明申请

US20090191468A1 Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features 审中-公开
标题翻译：通过引入各向异性分解辅助功能的接触层面罩布局
公开(公告)号：US20090191468A1
公开(公告)日：2009-07-30
申请号：US12021527
申请日：2008-01-29
申请人： Michael M. Crouse , Derren N. Dunn , Henning Haffner , Michael E. Scaman
发明人： Michael M. Crouse , Derren N. Dunn , Henning Haffner , Michael E. Scaman
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： This disclosure includes a SRAF layout that minimizes the number of SRAFs required to reliably print contact shapes. A method is provided that reduces the number of necessary SRAF features on a mask, placing at least two elongated SRAF shapes on the mask such that the elongated SRAF shapes extend past at least one edge of a mask shape in at least one direction.
摘要翻译：本公开包括SRAF布局，其最小化可靠地打印接触形状所需的SRAF的数量。提供了一种减少掩模上必要的SRAF特征的数量的方法，在掩模上放置至少两个细长的SRAF形状，使得细长SRAF形状延伸经过至少一个方向上的掩模形状的至少一个边缘。

4. 发明申请

US20110247690A1 SEMICONDUCTOR DEVICES COMPRISING ANTIREFLECTIVE CONDUCTIVE LAYERS AND METHODS OF MAKING AND USING 审中-公开
标题翻译：包含反导电导层的半导体器件及其制造和使用方法
公开(公告)号：US20110247690A1
公开(公告)日：2011-10-13
申请号：US13140806
申请日：2009-12-17
申请人： David Thomas Crouse , Thomas L. James , Michael M. Crouse
发明人： David Thomas Crouse , Thomas L. James , Michael M. Crouse
IPC分类号： H01L31/0224 , H01L31/0232 , H01L23/48 , H01L21/20 , H01L21/28
CPC分类号： H01L31/02162 , G02B1/116 , H01L31/02168 , H01L31/0224 , H01L31/022408 , H01L31/022425 , Y02E10/50
摘要： A semiconductor device includes a semiconductor substrate and an antireflective conductive layer. The antireflective conductive layer includes a metal layer disposed on the semiconductor substrate and defining at least one array of apertures through the metal layer. Each of the apertures has a width of no more than 5 μm and a distance between each aperture and its nearest neighboring aperture is no more than 10 μm. The antireflective conductive layer also includes a solid material filling each of the apertures, wherein the solid material has an index of refraction of at least 1.1.
摘要翻译：半导体器件包括半导体衬底和抗反射导电层。抗反射导电层包括设置在半导体衬底上的金属层并且限定通过金属层的至少一个孔阵列。每个孔具有不大于5μm的宽度，并且每个孔与其最近的相邻孔之间的距离不大于10μm。抗反射导电层还包括填充每个孔的固体材料，其中固体材料的折射率至少为1.1。

5. 发明申请

US20100042967A1 MEEF REDUCTION BY ELONGATION OF SQUARE SHAPES 有权
标题翻译：通过平面形状的缩小来减少MEEF
公开(公告)号：US20100042967A1
公开(公告)日：2010-02-18
申请号：US12191493
申请日：2008-08-14
申请人： Derren N. Dunn , Michael M. Crouse , Henning Haffner , Michael E. Scaman
发明人： Derren N. Dunn , Michael M. Crouse , Henning Haffner , Michael E. Scaman
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method that purposely relaxes OPC algorithm constraints to allow post OPC mask shapes to elongate along one direction (particularly lowering the 1-dimensional MEEF in this direction with the result of an effectively overall lowered MEEF) to produce a pattern on wafer that is circular to within an acceptable tolerance.
摘要翻译：一种意图放松OPC算法约束以允许OPC掩模形状沿着一个方向伸长的方法（特别是在该方向上降低1维MEEF，结果是有效地降低了MEEF），从而在晶圆上产生一个圆形到在可接受的容限内。

6. 发明授权

US07493186B2 Method and algorithm for the control of critical dimensions in a thermal flow process 失效
标题翻译：用于控制热流过程中关键尺寸的方法和算法
公开(公告)号：US07493186B2
公开(公告)日：2009-02-17
申请号：US11613238
申请日：2006-12-20
申请人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
发明人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G03F7/70508 , G03F7/70558 , G03F7/70625 , G03F7/70875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32188 , G05B2219/37224 , G05B2219/45028 , H01L22/12 , H01L22/20
摘要： A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes an initial process characterization; producing a production piece; a single metrology step to determine the critical dimensions of the produced features; solving a system of equations simultaneously for individual feedback correction values for the first and second processing parameters; and applying the individual feedback correction values to their respective processing parameters.
摘要翻译：一种基于至少第一和第二处理参数的单个度量步骤来控制一个或多个关键维度（CD）特征的方法，同时仍然使能到第一和第二处理参数的解耦反馈，包括初始过程表征生产一块; 一个单一的度量步骤来确定所产生的特征的关键尺寸; 针对第一和第二处理参数的各个反馈校正值同时求解方程组; 以及将各个反馈校正值应用于它们各自的处理参数。

7. 发明授权

US06869671B1 Enabling nanostructured materials via multilayer thin film precursor and applications to biosensors 有权
标题翻译：通过多层薄膜前体和生物传感器应用纳米结构材料
公开(公告)号：US06869671B1
公开(公告)日：2005-03-22
申请号：US10449618
申请日：2003-06-02
申请人： Michael M. Crouse , Albert E. Miller , Juan Jiang , David T. Crouse , Subash C. Basu
发明人： Michael M. Crouse , Albert E. Miller , Juan Jiang , David T. Crouse , Subash C. Basu
IPC分类号： B32B3/00
CPC分类号： G01N27/30 , Y10S977/856 , Y10S977/888 , Y10T428/12528 , Y10T428/12611 , Y10T428/1266 , Y10T428/12667 , Y10T428/12674 , Y10T428/12736 , Y10T428/12743 , Y10T428/1275 , Y10T428/12764 , Y10T428/12806 , Y10T428/12861 , Y10T428/12875 , Y10T428/12889 , Y10T428/24917 , Y10T428/249953 , Y10T428/249956 , Y10T428/249967 , Y10T428/24997 , Y10T428/249977 , Y10T428/249978 , Y10T428/249979 , Y10T428/24998 , Y10T428/249982 , Y10T428/249985 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： A thin film based nanoporous alumina template has been developed which allows the in situ removal of an electrically insulating alumina barrier layer at the pore bases. This barrier free nanoporous system has great utility for electrodeposition of a wide variety of nanowire materials. An exemplary multilayer thin film precursor is provided comprising Al (anodization layer), Ti (diffusion barrier) and Pt (active electrode) on a Si substrate. Aluminum anodization in sulfuric acid with a subsequent applied voltage ramping program produces a Pt electrode at the base of the nanopores without the additional steps of alumina removal, barrier layer dissolution, and metal deposition onto the pore bottoms.
摘要翻译：已经开发了一种基于薄膜的纳米多孔氧化铝模板，其允许在孔底部原位去除电绝缘氧化铝阻挡层。这种无障碍纳米孔系统对于各种纳米线材料的电沉积具有很大的实用价值。在Si衬底上提供了包括Al（阳极氧化层），Ti（扩散阻挡）和Pt（有源电极）的示例性多层薄膜前体。硫酸中的阳极氧化阳极氧化随后的施加电压斜坡程序在纳米孔的底部产生Pt电极，而不需要额外的氧化铝去除步骤，阻挡层溶解和金属沉积到孔底部。

8. 发明申请

US20090087755A1 PHOTOMASK AND METHOD OF MAKING THEREOF 有权
标题翻译：照片及其制作方法
公开(公告)号：US20090087755A1
公开(公告)日：2009-04-02
申请号：US11865982
申请日：2007-10-02
申请人： Sean D. Burns , Michael M. Crouse , Dario L. Goldfarb
发明人： Sean D. Burns , Michael M. Crouse , Dario L. Goldfarb
IPC分类号： G03F1/00
CPC分类号： G03F1/82 , G03F1/50
摘要： The disclosure is related to photomasks used in photolithography and methods of making photomasks. The method involves providing a transparent substrate with one or more reflective films disposed over a surface of the substrate, applying a photoresist to the solution-contacted reflective film and forming a pattern in the photoresist that is transferred to the substrate, and developing the pattern on the substrate by removing the remaining portions of the photoresist. The substrate carrying the patterned reflective film is then contacted with a solution comprising oxyanions. The disclosure is also related to photomasks made using the disclosed method.
摘要翻译：本公开涉及光刻中使用的光掩模和制造光掩模的方法。该方法包括提供一个透明衬底，一个或多个反射膜设置在衬底的表面上，向溶液接触的反射膜施加光致抗蚀剂并在转移到衬底上的光致抗蚀剂中形成图案，并且在通过去除光致抗蚀剂的剩余部分来实现。然后，携带图案化反射膜的基板与含有阴离子的溶液接触。本公开还涉及使用所公开的方法制造的光掩模。

9. 发明申请

US20080154420A1 METHOD AND ALGORITHM FOR THE CONTROL OF CRITICAL DIMENSIONS IN A THERMAL FLOW PROCESS 失效
标题翻译：用于控制热流过程中关键尺寸的方法和算法
公开(公告)号：US20080154420A1
公开(公告)日：2008-06-26
申请号：US11613238
申请日：2006-12-20
申请人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
发明人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G03F7/70508 , G03F7/70558 , G03F7/70625 , G03F7/70875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32188 , G05B2219/37224 , G05B2219/45028 , H01L22/12 , H01L22/20
摘要： A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes an initial process characterization; producing a production piece; a single metrology step to determine the critical dimensions of the produced features; solving a system of equations simultaneously for individual feedback correction values for the first and second processing parameters; and applying the individual feedback correction values to their respective processing parameters.
摘要翻译：一种基于至少第一和第二处理参数的单个度量步骤来控制一个或多个关键维度（CD）特征的方法，同时仍然使能到第一和第二处理参数的解耦反馈，包括初始过程表征生产一块; 一个单一的度量步骤来确定所产生的特征的关键尺寸; 针对第一和第二处理参数的各个反馈校正值同时求解方程组; 以及将各个反馈校正值应用于它们各自的处理参数。

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