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1. 发明授权

US08248579B2 Lithographic apparatus, device manufacturing method and device for correcting overlay errors between overlapping patterns 有权
标题翻译：平版印刷设备，装置制造方法和用于校正重叠图案之间的重叠误差的装置
公开(公告)号：US08248579B2
公开(公告)日：2012-08-21
申请号：US11948801
申请日：2007-11-30
申请人： Everhardus Cornelis Mos , Maurits Van Der Schaar , Hubertus Johannes Gertrudus Simons
发明人： Everhardus Cornelis Mos , Maurits Van Der Schaar , Hubertus Johannes Gertrudus Simons
IPC分类号： G03B27/68
CPC分类号： G03F7/70725 , G03F7/70258 , G03F7/70358 , G03F7/70458 , G03F7/70525 , G03F7/70633 , G03F7/70783
摘要： A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
摘要翻译：光刻设备包括配置成调节辐射束的照明系统，图案形成装置的支撑件，用于衬底的衬底台，投影系统和控制系统。图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。投影系统被配置为沿着扫描路径将图案化的辐射束作为图像投影到基板的目标部分上。扫描路径由光刻设备的曝光场的扫描方向上的轨迹限定。控制系统耦合到支撑件，基板台和投影系统，用于分别控制支撑件，基板台和投影系统的作用。控制系统被配置为通过在该区域中的图像的时间调整来校正沿着扫描路径的区域中的图像的局部失真。

2. 发明申请

US20120044470A1 Substrate for Use in Metrology, Metrology Method and Device Manufacturing Method 审中-公开
标题翻译：用于计量，计量方法和设备制造方法的基板
公开(公告)号：US20120044470A1
公开(公告)日：2012-02-23
申请号：US13190998
申请日：2011-07-26
申请人： Hendrik Jan Hidde SMILDE , Maurits Van Der Schaar , Kaustuve Bhattacharyya
发明人： Hendrik Jan Hidde SMILDE , Maurits Van Der Schaar , Kaustuve Bhattacharyya
IPC分类号： G03B27/42 , G01N21/00
CPC分类号： G03F7/70683 , G03F1/44 , G03F7/70633
摘要： A pattern from a patterning device is applied to a substrate. The applied pattern includes device functional areas and metrology target areas. Each metrology target area comprises a plurality of individual grating portions, which are used for diffraction based overlay measurements or other diffraction based measurements. The gratings are of the small target type, which is small than an illumination spot used in the metrology. Each grating has an aspect ratio substantially greater than 1, meaning that a length in a direction perpendicular to the grating lines which is substantially greater than a width of the grating. Total target area can be reduced without loss of performance in the diffraction based metrology. A composite target can comprise a plurality of individual grating portions of different overlay biases. Using integer aspect ratios such as 2:1 or 4:1, grating portions of different directions can be packed efficiently into rectangular composite target areas.
摘要翻译：将来自图案形成装置的图案应用于基板。应用模式包括设备功能区域和计量目标区域。每个测量目标区域包括多个单独的光栅部分，其用于基于衍射的覆盖测量或其他基于衍射的测量。光栅是小目标类型，小于计量中使用的照明点。每个光栅具有基本上大于1的长宽比，这意味着在垂直于光栅线的方向上的长度大致大于光栅的宽度。可以减少总目标面积，而不会在基于衍射的计量学中失去性能。复合目标可以包括不同覆盖偏移的多个单独光栅部分。使用诸如2：1或4：1的整数长宽比，可以将不同方向的光栅部分有效地包装到矩形复合目标区域中。

3. 发明申请

US20120038929A1 Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization 有权
标题翻译：用于角度分辨光谱光刻特征的方法和装置
公开(公告)号：US20120038929A1
公开(公告)日：2012-02-16
申请号：US13249566
申请日：2011-09-30
申请人： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
发明人： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
IPC分类号： G01J3/45
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
摘要翻译：通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。该属性可以是角度和波长相关的，并且可以包括TM和TE偏振辐射的强度及其相对相位差。

4. 发明申请

US20110073775A1 Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization 有权
标题翻译：用于角度分辨光谱光刻特征的方法和装置
公开(公告)号：US20110073775A1
公开(公告)日：2011-03-31
申请号：US12865828
申请日：2009-02-09
申请人： Irwan Danni Setija , Maurits Van Der Schaar
发明人： Irwan Danni Setija , Maurits Van Der Schaar
IPC分类号： G01J3/40 , G21K5/00
CPC分类号： G03F7/70633
摘要： An apparatus and method to determine overlay of a target on a substrate (6) by measuring, in the pupil plane (40) of a high numerical aperture len (L1), an angle-resolved spectrum as a result of radiation being reflected off the substrate. The overlay is determined from the anti-symmetric component of the spectrum, which is formed by subtracting the measured spectrum and a mirror image of the measured spectrum. The measured spectrum may contain only zeroth order reflected radiation from the target.
摘要翻译：一种用于通过在高数值孔径len（L1）的光瞳平面（40）中测量作为辐射的结果的角度分辨光谱从基质。通过从测量光谱中减去测量光谱和所测量的光谱的镜像形成的光谱的反对称分量来确定覆盖。所测量的光谱可能仅包含来自目标的零级反射辐射。

5. 发明授权

US07911612B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US07911612B2
公开(公告)日：2011-03-22
申请号：US11808922
申请日：2007-06-13
申请人： Antoine Gaston Marie Kiers , Arie Jeffrey Den Boef , Maurits Van Der Schaar
发明人： Antoine Gaston Marie Kiers , Arie Jeffrey Den Boef , Maurits Van Der Schaar
IPC分类号： G01B11/00 , G03F9/00 , G03C5/00 , H01L21/76
CPC分类号： G01N21/4788 , G01N21/95607 , G01N2021/95615 , G03F7/70633 , Y10T428/24331 , Y10T428/24942
摘要： An overlay target on a substrate is disclosed, the overlay target including a periodic array of structures wherein every nth structure is different from the rest of the structures. The periodic array is desirably made of two interlaced gratings, one of the gratings having a different pitch from the other grating in order to create an asymmetry in the array. This asymmetry can then be measured by measuring the diffraction spectra of radiation reflected from the overlay target. Variation in the asymmetry indicates the presence of an overlay error in layers on the substrate, where overlay targets are printed on subsequent layers.
摘要翻译：公开了一种在衬底上的覆盖目标，覆盖目标包括周期性结构阵列，其中每第n个结构与其余结构不同。期望地由两个隔行光栅制成周期阵列，其中一个光栅与另一个光栅具有不同的间距，以便在阵列中产生不对称性。然后可以通过测量从覆盖目标反射的辐射的衍射光谱来测量该不对称性。不对称性的变化表示衬底上存在覆盖层错误，其中覆盖目标印刷在后续层上。

6. 发明授权

US07791732B2 Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
标题翻译：用于角分辨光谱光刻特征的方法和装置
公开(公告)号：US07791732B2
公开(公告)日：2010-09-07
申请号：US11203418
申请日：2005-08-15
申请人： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
发明人： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
IPC分类号： G01B9/02 , G01J3/45 , G01N21/00
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
摘要翻译：通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。该属性可以是角度和波长相关的，并且可以包括TM和TE偏振辐射的强度及其相对相位差。

7. 发明授权

US07791727B2 Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
标题翻译：用于角分辨光谱光刻特征的方法和装置
公开(公告)号：US07791727B2
公开(公告)日：2010-09-07
申请号：US10918742
申请日：2004-08-16
申请人： Arie Jeffrey Den Boef , Mircea Dusa , Antoine Gaston Marie Kiers , Maurits Van Der Schaar
发明人： Arie Jeffrey Den Boef , Mircea Dusa , Antoine Gaston Marie Kiers , Maurits Van Der Schaar
IPC分类号： G01B9/02 , G01B11/00
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference.
摘要翻译：通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。该属性可以是角度和波长相关的，并且可以包括TM-和TE-偏振光的强度及其相对相位差。

8. 发明申请

US20100141916A1 LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD WITH DOUBLE EXPOSURE OVERLAY CONTROL 有权
标题翻译：具有双重曝光覆盖控制的平面设备和设备制造方法
公开(公告)号：US20100141916A1
公开(公告)日：2010-06-10
申请号：US12705050
申请日：2010-02-12
申请人： Maurits VAN DER SCHAAR , Richard Johannes Franciscus VAN HAREN
发明人： Maurits VAN DER SCHAAR , Richard Johannes Franciscus VAN HAREN
IPC分类号： G03B27/42
CPC分类号： G03F7/0035 , G03B27/42 , G03F7/70466 , G03F9/7084
摘要： A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; andin a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
摘要翻译：一种器件制造方法包括将图案从图案形成装置转移到衬底上。所述器件制造方法还包括将主标记的图案转印到用于形成对准标记的基底层; 在基层上沉积图案接收层; 在第一光刻工艺中，通过使用主标记对准包括第一图案和局部标记图案的第一掩模，并将第一图案和局部标记图案转印到图案接收层; 通过使用本地标记图案，相对于图案接收层对准包括第二图案的第二掩模; 并在第二光刻工艺中将第二图案转印到图案接收层; 第一和第二图案被配置成形成组装图案。

9. 发明申请

US20100068830A1 MARKER STRUCTURE AND METHOD FOR CONTROLLING ALIGNMENT OF LAYERS OF A MULTI-LAYERED SUBSTRATE 有权
标题翻译：用于控制多层基板的层的对准的标记结构和方法
公开(公告)号：US20100068830A1
公开(公告)日：2010-03-18
申请号：US12611428
申请日：2009-11-03
申请人： Richard Johannes Franciscus VAN HAREN , Arie Jeffrey Den Boef , Jacobus Burghoorn , Maurits Van Der Schaar , Bartolomeus Petrus Rijpers
发明人： Richard Johannes Franciscus VAN HAREN , Arie Jeffrey Den Boef , Jacobus Burghoorn , Maurits Van Der Schaar , Bartolomeus Petrus Rijpers
IPC分类号： H01L21/66 , G21K5/00 , H01L21/26
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7049 , G03F9/7065 , G03F9/7076 , G03F9/7092 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.
摘要翻译：本发明包括具有用于产生具有第一波长的辐射的第一源和具有用于产生具有第二波长的辐射的第二源的对准系统的光刻系统。第二波长大于第一波长。提供了具有第一层和第二层的标记结构。第二层直接或间接地存在于所述第一层的顶部。第一层具有第一周期性结构，第二层具有第二周期性结构。至少一个周期性结构在尺寸小于400nm的至少一个方向上具有多个特征。另外，第一和第二周期结构的组合形成被布置为被具有第二波长的辐射照射的衍射结构。

10. 发明授权

US07564555B2 Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
标题翻译：用于角分辨光谱光刻特征的方法和装置
公开(公告)号：US07564555B2
公开(公告)日：2009-07-21
申请号：US11504106
申请日：2006-08-15
申请人： Arie Jeffrey Den Boef , Mircea Dusa , Everhardus Cornelis Mos , Maurits Van Der Schaar , Stefan Carolus Jacobus Antonius Keij
发明人： Arie Jeffrey Den Boef , Mircea Dusa , Everhardus Cornelis Mos , Maurits Van Der Schaar , Stefan Carolus Jacobus Antonius Keij
IPC分类号： G01B11/00
CPC分类号： G03F7/70633
摘要： An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias −d with respect to each other, and the reflected radiation A1− is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2− is detected. Detected radiations A1+, A1−, A2+, and A2− is used to determine the overlay error.
摘要翻译：检查系统被布置成通过将不同波长和/或极化的多个辐射束投影到两个目标上来测量覆盖误差。将第一辐射束投射到第一靶上并检测反射辐射A1 +。第一个目标包括两个相对于彼此具有偏压+ d的光栅。第一辐射束也被投射到第二靶上，第二靶被包括相对于彼此具有偏压-d的两个光栅，并且检测到反射辐射A1-。具有与第一辐射束不同的波长和/或极化的第二辐射束被投影到第一目标上，并且检测反射辐射A2 +并将其投影到第二目标上，并检测反射辐射A2-。检测到的辐射A1 +，A1-，A2 +和A2-用于确定覆盖误差。

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