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1. 发明授权

US08969200B2 Apparatus and method for integration of through substrate vias 有权
标题翻译：通过衬底通孔整合的装置和方法
公开(公告)号：US08969200B2
公开(公告)日：2015-03-03
申请号：US13445636
申请日：2012-04-12
申请人： Jeremiah Hebding , Megha Rao , Colin McDonough , Matthew Smalley , Douglas Duane Coolbaugh , Joseph Piccirillo, Jr. , Stephen G. Bennett , Michael Liehr , Daniel Pascual
发明人： Jeremiah Hebding , Megha Rao , Colin McDonough , Matthew Smalley , Douglas Duane Coolbaugh , Joseph Piccirillo, Jr. , Stephen G. Bennett , Michael Liehr , Daniel Pascual
IPC分类号： H01L21/44
CPC分类号： H01L25/0652 , H01L21/76229 , H01L21/768 , H01L21/76802 , H01L21/76898 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/80 , H01L24/94 , H01L25/50 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/06181 , H01L2224/08145 , H01L2224/131 , H01L2224/80097 , H01L2224/80203 , H01L2224/80205 , H01L2224/80895 , H01L2224/9205 , H01L2224/94 , H01L2224/97 , H01L2225/06524 , H01L2225/06541 , H01L2924/1461 , H01L2924/014 , H01L2924/00014 , H01L2224/80 , H01L2924/00
摘要： An apparatus and method are provided for integrating TSVs into devices prior to device contacts processing. The apparatus includes a semiconducting layer; one or more CMOS devices mounted on a top surface of the semiconducting layer; one or more TSVs integrated into the semiconducting layer of the device wafer; at least one metal layer applied over the TSVs; and one or more bond pads mounted onto a top layer of the at least one metal layer, wherein the at least one metal layer is arranged to enable placement of the one or more bond pads at a specified location for bonding to a second device wafer. The method includes obtaining a wafer of semiconducting material, performing front end of line processing on the wafer; providing one or more TSVs in the wafer; performing middle of line processing on the wafer; and performing back end of line processing on the wafer.
摘要翻译：提供了一种在设备接触处理之前将TSV集成到设备中的装置和方法。该装置包括半导体层; 安装在半导体层的顶表面上的一个或多个CMOS器件; 集成到器件晶片的半导体层中的一个或多个TSV; 在TSV上施加至少一个金属层; 以及安装在所述至少一个金属层的顶层上的一个或多个接合焊盘，其中所述至少一个金属层被布置成能够将所述一个或多个接合焊盘放置在用于结合到第二器件晶片的指定位置。该方法包括获得半导体材料晶片，在晶片上进行线前处理; 在晶片中提供一个或多个TSV; 在晶片上进行中间线处理; 并在晶片上执行线路处理的后端。

2. 发明申请

US20130270711A1 APPARATUS AND METHOD FOR INTEGRATION OF THROUGH SUBSTRATE VIAS 有权
标题翻译：通过基板VIAS整合的装置和方法
公开(公告)号：US20130270711A1
公开(公告)日：2013-10-17
申请号：US13445636
申请日：2012-04-12
申请人： Jeremiah HEBDING , Megha RAO , Colin McDONOUGH , Matthew SMALLEY , Douglas Duane COOLBAUGH , Joseph PICCIRILLO, JR. , Stephen G. BENNETT , Michael LIEHR , Daniel PASCUAL
发明人： Jeremiah HEBDING , Megha RAO , Colin McDONOUGH , Matthew SMALLEY , Douglas Duane COOLBAUGH , Joseph PICCIRILLO, JR. , Stephen G. BENNETT , Michael LIEHR , Daniel PASCUAL
IPC分类号： H01L23/538 , H01L21/762 , H01L21/50 , H01L21/768
CPC分类号： H01L25/0652 , H01L21/76229 , H01L21/768 , H01L21/76802 , H01L21/76898 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/80 , H01L24/94 , H01L25/50 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/06181 , H01L2224/08145 , H01L2224/131 , H01L2224/80097 , H01L2224/80203 , H01L2224/80205 , H01L2224/80895 , H01L2224/9205 , H01L2224/94 , H01L2224/97 , H01L2225/06524 , H01L2225/06541 , H01L2924/1461 , H01L2924/014 , H01L2924/00014 , H01L2224/80 , H01L2924/00
摘要： An apparatus and method are provided for integrating TSVs into devices prior to device contacts processing. The apparatus includes a semiconducting layer; one or more CMOS devices mounted on a top surface of the semiconducting layer; one or more TSVs integrated into the semiconducting layer of the device wafer; at least one metal layer applied over the TSVs; and one or more bond pads mounted onto a top layer of the at least one metal layer, wherein the at least one metal layer is arranged to enable placement of the one or more bond pads at a specified location for bonding to a second device wafer. The method includes obtaining a wafer of semiconducting material, performing front end of line processing on the wafer; providing one or more TSVs in the wafer; performing middle of line processing on the wafer; and performing back end of line processing on the wafer.
摘要翻译：提供了一种在设备接触处理之前将TSV集成到设备中的装置和方法。该装置包括半导体层; 安装在半导体层的顶表面上的一个或多个CMOS器件; 集成到器件晶片的半导体层中的一个或多个TSV; 在TSV上施加至少一个金属层; 以及安装在所述至少一个金属层的顶层上的一个或多个接合焊盘，其中所述至少一个金属层被布置成能够将所述一个或多个接合焊盘放置在用于结合到第二器件晶片的指定位置。该方法包括获得半导体材料晶片，在晶片上进行线前处理; 在晶片中提供一个或多个TSV; 在晶片上进行中间线处理; 并在晶片上执行线路处理的后端。

3. 发明申请

US20070107093A1 Maize Hybrid Variety X5K677 审中-公开
标题翻译：玉米杂交品种X5K677
公开(公告)号：US20070107093A1
公开(公告)日：2007-05-10
申请号：US11669192
申请日：2007-01-31
申请人： Matthew Smalley , Loren Hoffbeck
发明人： Matthew Smalley , Loren Hoffbeck
IPC分类号： A01H5/00 , C12N5/04
CPC分类号： A01H5/10
摘要： A novel hybrid maize variety designated X5K677 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X5K677 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X5K677 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize hybrid_variety X5K677, the hybrid seed, the hybrid plant produced from the seed, and variants, mutants, and minor modifications of hybrid maize variety X5K677. This invention further relates to methods for producing maize varieties derived from hybrid maize variety X5K677 and to the maize varieties derived by the use of those methods.
摘要翻译：一种名为X5K677的新型杂种玉米品种及其种子，植物和植物部分，由Pioneer Hi-Bred International，Inc.专有的近交玉米品种生产。用于生产玉米植物的方法，其包括将杂交玉米品种X5K677与另一玉米植物杂交。在其遗传物质中生产含有通过回交转化和/或转化渗透到X5K677中的一种或多种性状的玉米植物的方法以及由此生产的玉米种子，植物和植物部分的方法。本发明涉及玉米杂交种X5K677，杂种种子，从种子产生的杂交植物，以及杂种玉米品种X5K677的变体，突变体和微小修饰。本发明还涉及从杂交玉米品种X5K677获得的玉米品种的生产方法以及通过使用这些方法得到的玉米品种的方法。

4. 发明申请

US20060107405A1 Hybrid maize plant and seed X4M830 有权
标题翻译：杂交玉米植物和种子X4M830
公开(公告)号：US20060107405A1
公开(公告)日：2006-05-18
申请号：US11343807
申请日：2006-01-31
申请人： Loren Hoffbeck , Matthew Smalley
发明人： Loren Hoffbeck , Matthew Smalley
IPC分类号： A01H5/00 , C12N5/04
CPC分类号： A01H5/10
摘要： A novel hybrid maize variety designated X4M830 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize lines. Methods for producing a maize plant that comprises crossing hybrid maize variety X4M830 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X4M830 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the hybrid seed X4M830, the hybrid plant produced from the seed, and variants, mutants, and trivial modifications of hybrid X4M830. This invention further relates to methods for producing maize lines derived from hybrid maize variety X4M830 and to the maize lines derived by the use of those methods.
摘要翻译：一种名为X4M830的新型杂种玉米品种及其种子，植物和植物部分，通过Pioneer Hi-Bred International，Inc.专有的近交玉米品系生产。用于生产玉米植物的方法，其包括将杂交玉米品种X4M830与另一玉米植物杂交。用于生产含有其遗传物质的玉米植物的方法通过回交转化和/或转化渗透到X4M830中的一种或多种性状，以及由此产生的玉米种子，植物和植物部分。本发明涉及杂交种子X4M830，由种子生产的杂交植物，以及杂种X4M830的变体，突变体和平凡修饰。本发明还涉及用于产生源自杂种玉米品种X4M830的玉米品系的方法以及通过使用这些方法得到的玉米品系。

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