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1. 发明授权

US08715517B2 Process for fabricating an acoustic wave resonator comprising a suspended membrane 有权
标题翻译：制造包括悬浮膜的声波谐振器的方法
公开(公告)号：US08715517B2
公开(公告)日：2014-05-06
申请号：US13314844
申请日：2011-12-08
申请人： Bruno Imbert , Emmanuel Defay , Chrystel Deguet , Hubert Moriceau , Mathieu Pijolat
发明人： Bruno Imbert , Emmanuel Defay , Chrystel Deguet , Hubert Moriceau , Mathieu Pijolat
IPC分类号： H03H3/08 , H03H3/00 , B32B37/30
CPC分类号： H03H3/08 , B32B37/30 , H03H3/00 , H03H3/02 , H03H9/173 , H03H2003/021
摘要： A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.
摘要翻译：一种用于制造包括压电材料层的悬浮膜的声波谐振器的方法，包括以下步骤：在第一衬底的表面上制备包括至少一层第一压电材料的第一叠层; 制备包括至少一个第二基底的第二叠层; 通过沉积或产生具有受控尺寸的颗粒的至少一个非结合起始区的产生，离开所述堆之一的表面在随后的结合步骤之前局部地赋予突出的纳米结构; 由于存在非结合起始区，所述两个堆叠的直接结合在堆叠之间产生泡罩; 以及使所述第一叠层变薄以至少消除所述第一衬底。

2. 发明申请

US20110132866A1 Method for Producing a Bulk Wave Acoustic Resonator of FBAR Type 有权
标题翻译：制造FBAR型散波声谐振器的方法
公开(公告)号：US20110132866A1
公开(公告)日：2011-06-09
申请号：US12960475
申请日：2010-12-04
申请人： Mathieu Pijolat
发明人： Mathieu Pijolat
IPC分类号： H01B13/34
CPC分类号： H03H3/02 , H03H2003/021
摘要： A method for fabricating a bulk wave acoustic resonator (FBAR) which includes at least locally a partially suspended thin layer of piezoelectric material, and includes the following steps: the formation of at least one first so-called lower electrode on the surface of a thin layer of piezoelectric material; the deposition of a so-called sacrificial layer on the surface of the said thin layer of piezoelectric material and of the said first electrode defining a first set; the assembling of the said first set with a second substrate; the formation of at least one second electrode termed the upper electrode on the opposite face of the said thin layer of piezoelectric material from the face comprising the said first electrode; and the elimination of the sacrificial layer so as to unveil the said thin layer of piezoelectric material and the said first electrode and define the bulk wave resonator.
摘要翻译：一种用于制造体声波谐振器（FBAR）的方法，其至少局部地包括部分悬浮的压电材料薄层，并且包括以下步骤：在薄的表面上形成至少一个第一所谓的下电极压电材料层; 在所述压电材料薄层和所述第一电极的表面上沉积所谓的牺牲层，所述第一电极限定第一组; 所述第一组件与第二衬底的组装; 在包括所述第一电极的表面上形成称为所述上电极的至少一个第二电极，所述至少一个第二电极在所述薄压电材料薄层的相对面上; 以及消除牺牲层，以便揭示所述薄层压电材料和所述第一电极并限定体波谐振器。

3. 发明授权

US08431031B2 Method for producing a bulk wave acoustic resonator of FBAR type 有权
标题翻译： FBAR型体声波谐振器的制造方法
公开(公告)号：US08431031B2
公开(公告)日：2013-04-30
申请号：US12960475
申请日：2010-12-04
申请人： Mathieu Pijolat
发明人： Mathieu Pijolat
IPC分类号： H01B13/34
CPC分类号： H03H3/02 , H03H2003/021
摘要： A method for fabricating a bulk wave acoustic resonator (FBAR) which includes at least locally a partially suspended thin layer of piezoelectric material, and includes the following steps: the formation of at least one first so-called lower electrode on the surface of a thin layer of piezoelectric material; the deposition of a so-called sacrificial layer on the surface of the said thin layer of piezoelectric material and of the said first electrode defining a first set; the assembling of the said first set with a second substrate; the formation of at least one second electrode termed the upper electrode on the opposite face of the said thin layer of piezoelectric material from the face comprising the said first electrode; and the elimination of the sacrificial layer so as to unveil the said thin layer of piezoelectric material and the said first electrode and define the bulk wave resonator.
摘要翻译：一种用于制造体声波谐振器（FBAR）的方法，其至少局部地包括部分悬浮的压电材料薄层，并且包括以下步骤：在薄的表面上形成至少一个第一所谓的下电极压电材料层; 在所述压电材料薄层和所述第一电极的表面上沉积所谓的牺牲层，所述第一电极限定第一组; 所述第一组件与第二衬底的组装; 在包括所述第一电极的表面上形成称为所述上电极的至少一个第二电极，所述至少一个第二电极在所述薄压电材料薄层的相对面上; 以及消除牺牲层，以便揭示所述薄层压电材料和所述第一电极并限定体波谐振器。

4. 发明申请

US20120145667A1 Process for Fabricating an Acoustic Wave Resonator Comprising a Suspended Membrane 有权
标题翻译：制造包含悬浮膜的声波谐振器的方法
公开(公告)号：US20120145667A1
公开(公告)日：2012-06-14
申请号：US13314844
申请日：2011-12-08
申请人： Bruno IMBERT , Emmanuel DEFAY , Chrystel DEGUET , Hubert MORICEAU , Mathieu PIJOLAT
发明人： Bruno IMBERT , Emmanuel DEFAY , Chrystel DEGUET , Hubert MORICEAU , Mathieu PIJOLAT
IPC分类号： B32B37/30 , C23F1/02 , B32B38/00 , B32B37/14
CPC分类号： H03H3/08 , B32B37/30 , H03H3/00 , H03H3/02 , H03H9/173 , H03H2003/021
摘要： A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.
摘要翻译：一种用于制造包括压电材料层的悬浮膜的声波谐振器的方法，包括以下步骤：在第一衬底的表面上制备包括至少一层第一压电材料的第一堆叠; 制备包括至少一个第二基底的第二叠层; 通过沉积或产生具有受控尺寸的颗粒的至少一个非结合起始区的产生，离开所述堆之一的表面在随后的结合步骤之前局部地赋予突出的纳米结构; 由于存在非结合起始区，所述两个堆叠的直接结合在堆叠之间产生泡罩; 以及使所述第一叠层变薄以至少消除所述第一衬底。

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