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1. 发明专利

JPS5735982A Takehigosenbetsuki 失效
公开(公告)号：JPS5735982A
公开(公告)日：1982-02-26
申请号：JP10944180
申请日：1980-08-08
申请人： Masatoshi Nishikawa
发明人： NISHIKAWA MASATOSHI
IPC分类号： B07B13/04 , B07C5/06

2. 发明申请

US20140321948A1 BOOKBINDING APPARATUS 有权
标题翻译： BOOKBINDING设备
公开(公告)号：US20140321948A1
公开(公告)日：2014-10-30
申请号：US14264667
申请日：2014-04-29
申请人： Yoshihiro NOGUCHI , Atsushi HIROSHIMA , Masatoshi NISHIKAWA
发明人： Yoshihiro NOGUCHI , Atsushi HIROSHIMA , Masatoshi NISHIKAWA
IPC分类号： B42C9/00
CPC分类号： B42C9/0025 , B42C9/00 , B42C9/0006 , B42C9/0012 , B42C9/0031
摘要： A bookbinding apparatus includes an application roller that applies glue onto a back edge face of a sheet bundle and a bookbinding control unit that positions the application roller onto the back edge face and causes the roller to execute glue application. The bookbinding apparatus applies a required amount of glue determined by a sheet bundle thickness by, after applying side glues to both side surfaces of the sheet bundle, bringing the application roller in contact with a first position within a central region on the back edge face and rotating the roller in a forward direction, bringing the application roller in contact with a second position between the first position and a right side of the sheet bundle, and rotating the roller in the forward direction. The glue is leveled to form a flat layer of adhesive with an adequate thickness.
摘要翻译：装订装置包括将胶水施加到片材摞的后边缘面上的施加辊和将施加辊定位在后边缘面上并使辊执行胶合施用的装订控制单元。装订装置通过将侧胶施加到片材摞的两个侧表面之后，通过在片材摞的两个侧表面上施加由片材厚度确定的所需量的胶水，使施加辊与后边缘面上的中心区域内的第一位置接触，使辊子沿向前方向旋转，使涂布辊与片材束的第一位置和右侧之间的第二位置接触，并使辊沿正向旋转。胶水平整以形成具有足够厚度的平坦的粘合剂层。

3. 发明申请

US20110250748A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110250748A1
公开(公告)日：2011-10-13
申请号：US13076660
申请日：2011-03-31
申请人： Masahiro Fukuda , Ken Sugimoto , Masatoshi Nishikawa
发明人： Masahiro Fukuda , Ken Sugimoto , Masatoshi Nishikawa
IPC分类号： H01L21/28
CPC分类号： H01L29/7833 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6659 , H01L29/66636 , H01L29/7848
摘要： A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming a second sidewall along a lateral wall of the second gate electrode, forming an oxide film to cover the semiconductor substrate, the first gate electrode, the second gate electrode, the first sidewall and the second sidewall, forming a resist above the oxide film to cover the first region, removing the oxide film in the second region by etching the oxide film with the resist serving as a mask, removing the resist, and executing a plasma process by using a gas containing chlorine with respect to the semiconductor substrate and the oxide film in the first region.
摘要翻译：一种制造半导体器件的方法，包括：在半导体衬底的第一区域中形成第一栅电极并在所述半导体衬底的第二区域中形成第二栅电极，沿着所述第一栅极的侧壁形成第一侧壁并且沿着第二栅电极的侧壁形成第二侧壁，形成氧化膜以覆盖半导体衬底，第一栅电极，第二栅电极，第一侧壁和第二侧壁，在氧化物上方形成抗蚀剂膜覆盖第一区域，通过用作为掩模的抗蚀剂蚀刻氧化物膜去除第二区域中的氧化物膜，去除抗蚀剂，并且通过使用相对于半导体衬底含氯气体来执行等离子体处理，以及第一区域中的氧化物膜。

4. 发明申请

US20110057270A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110057270A1
公开(公告)日：2011-03-10
申请号：US12878364
申请日：2010-09-09
申请人： Masatoshi NISHIKAWA
发明人： Masatoshi NISHIKAWA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7843 , H01L29/7848
摘要： A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concentration, a second Si mixed crystal layer formed over the first Si mixed crystal layer and that includes the impurities with a second concentration higher than the first concentration, and a third Si mixed crystal layer formed over the second Si mixed crystal layer and that includes the impurities with a third concentration lower than the second concentration.
摘要翻译：半导体器件在源极/漏极区域中包括栅极绝缘膜，栅极电极，源极/漏极区域和Si混合晶体层。 Si混合晶体层包括：第一Si混合晶体层，其包含第一浓度的杂质;第二Si混合晶体层，形成在第一Si混合晶体层上，并且包括第二浓度高于第一浓度的杂质;以及在所述第二Si混合晶层上形成的第三Si混晶层，所述第三Si混晶层包含第三浓度低于第二浓度的杂质。

5. 发明授权

US4435901A Method of manufacturing scissors and scissors 失效
标题翻译：制造剪刀和剪刀的方法
公开(公告)号：US4435901A
公开(公告)日：1984-03-13
申请号：US223325
申请日：1981-01-08
申请人： Masatoshi Nishikawa
发明人： Masatoshi Nishikawa
IPC分类号： B26B13/00 , B23P15/40 , B26B13/02 , B21K11/06
CPC分类号： B26B13/02
摘要： Safety scissors wherein the scissor members are composed of a metal member partially embedded in plastic in such a way that a part of the exposed metal serves as a cutting edge and the remaining exposed portion of the metal member bears the sliding friction when the two scissor members are moved relative to each other.
摘要翻译：安全剪刀，其中剪刀构件由部分地嵌入塑料中的金属构件构成，使得暴露的金属的一部分用作切割边缘，并且金属构件的剩余暴露部分在两个剪刀构件相对于彼此移动。

6. 发明授权

US09616698B2 Bookbinding apparatus 有权
公开(公告)号：US09616698B2
公开(公告)日：2017-04-11
申请号：US14264667
申请日：2014-04-29
申请人： Yoshihiro Noguchi , Atsushi Hiroshima , Masatoshi Nishikawa
发明人： Yoshihiro Noguchi , Atsushi Hiroshima , Masatoshi Nishikawa
IPC分类号： B42C9/00
CPC分类号： B42C9/0025 , B42C9/00 , B42C9/0006 , B42C9/0012 , B42C9/0031
摘要： A bookbinding apparatus includes an application roller that applies glue onto a back edge face of a sheet bundle and a bookbinding control unit that positions the application roller onto the back edge face and causes the roller to execute glue application. The bookbinding apparatus applies a required amount of glue determined by a sheet bundle thickness by, after applying side glues to both side surfaces of the sheet bundle, bringing the application roller in contact with a first position within a central region on the back edge face and rotating the roller in a forward direction, bringing the application roller in contact with a second position between the first position and a right side of the sheet bundle, and rotating the roller in the forward direction. The glue is leveled to form a flat layer of adhesive with an adequate thickness.

7. 发明授权

US08222706B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08222706B2
公开(公告)日：2012-07-17
申请号：US12878364
申请日：2010-09-09
申请人： Masatoshi Nishikawa
发明人： Masatoshi Nishikawa
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7843 , H01L29/7848
摘要： A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concentration, a second Si mixed crystal layer formed over the first Si mixed crystal layer and that includes the impurities with a second concentration higher than the first concentration, and a third Si mixed crystal layer formed over the second Si mixed crystal layer and that includes the impurities with a third concentration lower than the second concentration.
摘要翻译：半导体器件在源极/漏极区域中包括栅极绝缘膜，栅极电极，源极/漏极区域和Si混合晶体层。 Si混合晶体层包括：第一Si混合晶体层，其包含第一浓度的杂质;第二Si混合晶体层，形成在第一Si混合晶体层上，并且包括第二浓度高于第一浓度的杂质;以及在所述第二Si混合晶层上形成的第三Si混晶层，所述第三Si混晶层包含第三浓度低于第二浓度的杂质。

8. 发明申请

US20120164806A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120164806A1
公开(公告)日：2012-06-28
申请号：US13413654
申请日：2012-03-07
申请人： Masatoshi NISHIKAWA
发明人： Masatoshi NISHIKAWA
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7843 , H01L29/7848
摘要： A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concentration, a second Si mixed crystal layer formed over the first Si mixed crystal layer and that includes the impurities with a second concentration higher than the first concentration, and a third Si mixed crystal layer formed over the second Si mixed crystal layer and that includes the impurities with a third concentration lower than the second concentration.
摘要翻译：半导体器件在源极/漏极区域中包括栅极绝缘膜，栅极电极，源极/漏极区域和Si混合晶体层。 Si混合晶体层包括：第一Si混合晶体层，其包含第一浓度的杂质;第二Si混合晶体层，形成在第一Si混合晶体层上，并且包括第二浓度高于第一浓度的杂质;以及在所述第二Si混合晶层上形成的第三Si混晶层，所述第三Si混晶层包含第三浓度低于第二浓度的杂质。

9. 发明申请

US20120058610A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120058610A1
公开(公告)日：2012-03-08
申请号：US13190696
申请日：2011-07-26
申请人： Katsuaki Ookoshi , Masatoshi Nishikawa , Yosuke Shimamune
发明人： Katsuaki Ookoshi , Masatoshi Nishikawa , Yosuke Shimamune
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/823807 , H01L29/7848
摘要： A method of manufacturing a semiconductor device is provided. The method includes forming a gate electrode on a semiconductor substrate; forming a dopant implantation area in the semiconductor substrate by implanting a dopant in the semiconductor substrate, using the gate electrode as a mask; forming sidewalls on the gate electrode; forming a first recess by etching the semiconductor substrate, using the gate electrode and the sidewalls as a mask; forming a second recess by removing the dopant implantation area positioned below the sidewalls; and forming a source area and a drain area by causing a semiconductor material to grow in the first recess and the second recess.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在半导体衬底上形成栅电极; 通过使用栅电极作为掩模在半导体衬底中注入掺杂剂，在半导体衬底中形成掺杂剂注入区; 在所述栅电极上形成侧壁; 通过蚀刻所述半导体衬底，使用所述栅电极和所述侧壁作为掩模来形成第一凹部; 通过去除位于侧壁下方的掺杂剂注入区域形成第二凹槽; 以及通过使半导体材料在所述第一凹部和所述第二凹部中生长而形成源极区域和漏极区域。

10. 发明授权

US4250620A Plastic scissors with metallic cutting inserts 失效
标题翻译：塑料剪刀与金属切削刀片
公开(公告)号：US4250620A
公开(公告)日：1981-02-17
申请号：US26700
申请日：1979-04-03
申请人： Masatoshi Nishikawa
发明人： Masatoshi Nishikawa
IPC分类号： B26B13/00 , B23P15/40 , B26B13/02
CPC分类号： B26B13/02
摘要： Safety scissors wherein the scissor members are composed of a metal member partially embedded in plastic in such a way that a part of the exposed metal serves as a cutting edge and the remaining exposed portion of the metal member bears the sliding friction when the two scissor members are moved relative to each other.
摘要翻译：安全剪刀，其中剪刀构件由部分地嵌入塑料中的金属构件构成，使得暴露的金属的一部分用作切割边缘，并且金属构件的剩余暴露部分在两个剪刀构件相对于彼此移动。

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