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1. 发明授权

US08858754B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08858754B2
公开(公告)日：2014-10-14
申请号：US13114101
申请日：2011-05-24
申请人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
发明人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
IPC分类号： C23C16/509 , C23C16/455 , H01L21/306 , C23F1/00 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32633 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32568 , H01J37/32651 , H01J37/32834
摘要： There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode 120 installed at a ceiling wall 105 of a processing chamber 102 so as to face a lower electrode 111 and having a multiple number of discharge holes 123 for introducing the processing gas; a shield sidewall 310 configured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust path 330 formed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust path 138 installed at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.
摘要翻译：提供了一种等离子体处理装置，其能够容易地排出在可垂直移动的上部电极上方的空间中引入的处理气体。该等离子体处理装置包括一个垂直移动的上部电极120，该上部电极120安装在处理室102的顶壁105处，以面对下部电极111并具有多个用于引入处理气体的排放孔123; 被配置为围绕电极的屏蔽侧壁310和电极之间的处理空间; 内部排气通道330，形成在屏蔽侧壁的内部，并构造成排出处理空间中的大气; 以及外部排气通道138，其安装在屏蔽侧壁的外侧，并被配置为排出引入到上电极和天花板壁之间的空间中的处理气体。

2. 发明申请

US20060288934A1 Electrode assembly and plasma processing apparatus 审中-公开
标题翻译：电极组件和等离子体处理装置
公开(公告)号：US20060288934A1
公开(公告)日：2006-12-28
申请号：US11453140
申请日：2006-06-15
申请人： Chikako Takahashi , Takashi Suzuki , Masato Horiguchi
发明人： Chikako Takahashi , Takashi Suzuki , Masato Horiguchi
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23F4/00 , H01J37/32009 , H01J37/3244 , H01J37/32532 , H01J37/32633
摘要： An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented so that a worsening of the ability to carry out maintenance can be prevented. An upper electrode assembly has an upper electrode plate 32, a cooling plate (C/P) 34 and a spacer 37 interposed between the upper electrode plate 32 and the C/P 34. The upper electrode plate 32 has therein electrode plate gas-passing holes 32a that penetrate through the upper electrode plate 32. The C/P 34 has therein C/P gas-passing holes 34a that penetrate through the C/P 34. The spacer 37 has therein spacer gas-passing holes 37a that penetrate through the spacer 37. The electrode plate gas-passing holes 32a, C/P gas-passing holes 34a and the spacer gas-passing holes 37a are not disposed collinearly.
摘要翻译：能够防止电极板损坏的等离子体处理装置的电极组件，能够防止要防止的部件的数量的增加，从而可以防止进行维护的能力的恶化。上电极组件具有上电极板32，冷却板（C / P）34和插入在上电极板32和C / P 34之间的间隔件37.上电极板32具有电极板气体通过孔32a穿过上电极板32.C / P 34具有穿过C / P 34的C / P气体通过孔34a。间隔件37中具有间隔件气体通过孔37a，穿过间隔件37.电极板气体通过孔32a，C / P气体通过孔34a和间隔件气体通过孔37a不共线设置。

3. 发明申请

US20060102288A1 Focus ring, plasma etching apparatus and plasma etching method 有权
公开(公告)号：US20060102288A1
公开(公告)日：2006-05-18
申请号：US11270461
申请日：2005-11-10
申请人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
发明人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
IPC分类号： H01L21/306 , C23F1/00 , B44C1/22
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.

4. 发明授权

US06883043B2 Information processing apparatus incorporated in a control unit storing an authentication information and transmitting a command to request an access right when a first mode is set 失效
标题翻译：包含在存储认证信息的控制单元中的信息处理设备，并且当设置第一模式时发送请求访问权限的命令
公开(公告)号：US06883043B2
公开(公告)日：2005-04-19
申请号：US09948192
申请日：2001-09-07
申请人： Masato Horiguchi
发明人： Masato Horiguchi
IPC分类号： G06F12/14 , G06F3/06 , G06F13/38 , G06F15/16 , G06F21/24 , H04L12/40 , G06F13/14
CPC分类号： H04L12/40123 , H04L12/40084
摘要： In a network implemented based on IEEE 1394, when an HDD is connected to a personal computer via an IEEE 1394 connection unit and a GUID terminal connection unit, the HDD obtains a GUID via the GUID terminal connection unit. When the personal computer requests acquisition of an access right, the HDD obtains a GUID via the IEEE 1394 connection unit, and compares it with the GUID obtained via the GUID terminal connection unit, and since the GUIDs match, the HDD assigns an access right to the personal computer. Even if another personal computer not connected to the HDD via the GUID terminal connection unit, transmits a GUID to the HDD via the IEEE 1394 connection unit, because the GUID differs from that of the personal computer connected to the HDD via the GUID terminal connection unit, an access right is not assigned to the personal computer not connected to the HDD via the GUID terminal connection unit.
摘要翻译：在基于IEEE1394实现的网络中，当HDD经由IEEE 1394连接单元和GUID终端连接单元连接到个人计算机时，HDD通过GUID终端连接单元获得GUID。当个人计算机请求获取访问权时，HDD通过IEEE 1394连接单元获得GUID，并将其与通过GUID终端连接单元获得的GUID进行比较，并且由于GUID匹配，所以HDD分配访问权限个人电脑。即使通过GUID终端连接单元未连接到HDD的另一个个人计算机，通过IEEE 1394连接单元将GUID发送到HDD，因为GUID与通过GUID终端连接单元连接到HDD的个人计算机的GUID不同，则未通过GUID终端连接单元将访问权限分配给未连接到HDD的个人计算机。

5. 发明授权

US09455125B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09455125B2
公开(公告)日：2016-09-27
申请号：US13070115
申请日：2011-03-23
申请人： Akihiro Yoshimura , Tetsuji Sato , Masato Horiguchi , Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi
发明人： Akihiro Yoshimura , Tetsuji Sato , Masato Horiguchi , Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32568
摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.
摘要翻译：公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触，并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

6. 发明授权

US08583927B2 Streaming system and streaming method 有权
公开(公告)号：US08583927B2
公开(公告)日：2013-11-12
申请号：US13243694
申请日：2011-09-23
申请人： Motomasa Futagami , Tatsumi Sakaguchi , Masato Horiguchi
发明人： Motomasa Futagami , Tatsumi Sakaguchi , Masato Horiguchi
IPC分类号： H04L29/06 , H04N21/6437
CPC分类号： H04L63/0457 , H04L9/00 , H04L63/0428 , H04L63/061 , H04L63/12 , H04L63/164 , H04L65/1006 , H04L65/4084 , H04L65/602 , H04L65/607 , H04L2209/60 , H04N7/1675 , H04N21/2347 , H04N21/235 , H04N21/435 , H04N21/4405 , H04N21/6437
摘要： A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

7. 发明申请

US20110240224A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20110240224A1
公开(公告)日：2011-10-06
申请号：US13070115
申请日：2011-03-23
申请人： Akihiro YOSHIMURA , Tetsuji SATO , Masato HORIGUCHI , Nobuhiro WADA , Makoto KOBAYASHI , Hiroshi TSUJIMOTO , Jun TAMURA , Mamoru NAOI
发明人： Akihiro YOSHIMURA , Tetsuji SATO , Masato HORIGUCHI , Nobuhiro WADA , Makoto KOBAYASHI , Hiroshi TSUJIMOTO , Jun TAMURA , Mamoru NAOI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32568
摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.
摘要翻译：公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触，并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

8. 发明授权

US08572380B2 Streaming system and streaming method 有权
标题翻译：流系统和流方法
公开(公告)号：US08572380B2
公开(公告)日：2013-10-29
申请号：US10498815
申请日：2003-10-29
申请人： Motomasa Futagami , Tatsumi Sakaguchi , Masato Horiguchi
发明人： Motomasa Futagami , Tatsumi Sakaguchi , Masato Horiguchi
IPC分类号： H04L29/06
CPC分类号： H04L63/0457 , H04L9/00 , H04L63/0428 , H04L63/061 , H04L63/12 , H04L63/164 , H04L65/1006 , H04L65/4084 , H04L65/602 , H04L65/607 , H04L2209/60 , H04N7/1675 , H04N21/2347 , H04N21/235 , H04N21/435 , H04N21/4405 , H04N21/6437
摘要： A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.
摘要翻译：流系统包括创作单元（2），流服务器（3）和客户终端（5）。创作单元生成由加密的内容数据组成的文件和至少包含用于生成RTP分组的分组化控制信息的辅助信息，由与编码的内容数据相关的信息组成的非加密的编解码器相关标题和加密信息用于将加密的内容数据形式分组解密成分组。流服务器将加密的内容数据以及至少与编解码器相关的头部打包，并将结果数据作为流分发。客户端指代接收到的分组的编解码器相关头部，重新组合分组，并对重新组合的分组的加密内容数据进行解密，生成内容数据。

9. 发明申请

US20120247678A1 ELECTRODE ASSEMBLY AND PLASMA PROCESSING APPARATUS 有权
标题翻译：电极组件和等离子体加工设备
公开(公告)号：US20120247678A1
公开(公告)日：2012-10-04
申请号：US13437647
申请日：2012-04-02
申请人： Chikako TAKAHASHI , Takashi SUZUKI , Masato HORIGUCHI , Takashi Yamamoto
发明人： Chikako TAKAHASHI , Takashi SUZUKI , Masato HORIGUCHI , Takashi Yamamoto
IPC分类号： H01L21/687 , H01L21/3065
CPC分类号： H01J37/32633 , H01J37/32009 , H01J37/3244 , H01J37/32532 , H01L21/6831 , Y10T279/23
摘要： An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented, so that the ability to carry out maintenance can be easily maintained. An upper electrode assembly has an upper electrode plate, a cooling plate (C/P) and a spacer interposed between the upper electrode plate and the C/P. The upper electrode plate has therein electrode plate gas-passing holes that penetrate through the upper electrode plate. The C/P has therein C/P gas-passing holes that penetrate through the C/P. The spacer has therein spacer gas-passing holes that penetrate through the spacer. The electrode plate gas-passing holes, the C/P gas-passing holes and the spacer gas-passing holes are not disposed collinearly.
摘要翻译：能够防止电极板损坏的等离子体处理装置的电极组件，能够增加要防止的部件数量，能够容易地维持进行维护的能力。上电极组件具有上电极板，冷却板（C / P）和插入在上电极板和C / P之间的间隔件。上电极板具有穿过上电极板的电极板气体通过孔。 C / P具有穿过C / P的C / P气体通过孔。间隔件具有穿过间隔件的隔离气体通过孔。电极板气体通过孔，C / P气体通过孔和隔离气体通过孔不共线设置。

10. 发明授权

US08192577B2 Focus ring, plasma etching apparatus and plasma etching method 有权
标题翻译：聚焦环，等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US08192577B2
公开(公告)日：2012-06-05
申请号：US12491962
申请日：2009-06-25
申请人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
发明人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
摘要翻译：在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中，安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域，其中平均表面粗糙度小，使得在蚀刻处理期间产生的反应产物不被捕获以沉积，并且在平均表面粗糙度大的第一区域的外侧的第二区域，使得产生的反应产物在蚀刻过程中被捕获以被沉积。第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分，而在等离子体蚀刻装置中配备聚焦环，并且在基板上进行等离子体蚀刻。

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